• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.3 no.1
• /
• pp.49-57
• /
• 2002

The possibility of a transmission noise reduction of piezoelectric smart panels using piezoelectric shunt damping is experimentally studied. Piezoelectric smart panel is basically a plate structure on which piezoelectric patch with shunt circuits is mounted and sound absorbing materials are bonded on the surface of the structure. Sound absorbing materials can absorb the sound transmitted at mid frequency region effectively while the use of piezoelectric shunt damping can reduce the transmission at resonance frequencies of the panel structure. To be able to reduce the sound transmission at low panel resonances, piezoelectric damping using the measured electrical impedance model is adopted. Resonant shunt circuit for piezoelectric shunt damping is composed of register and inductor in series, and they are determined by maximizing the dissipated energy throughout the circuit. The transmitted noise reduction performance of smart panels is investigated using an acoustic tunnel. The tunnel is a tube with square crosses section and a loud-speaker is mounted at one side of the tube as a sound source. Panels are mounted in the middle of the tunnel and the transmitted sound pressure across panels is measured. Noise reduction performance of a smart panels possessing absorbing material and/or air gap shows a good result at mid frequency region but little effect in the resonance frequency. By enabling the piezoelectric shunt damping, noise reduction of 10dB, 8dB is achieved at the resonance frequencise as well. Piezoelectric smart panels incorporating passive method and piezoelectric shunt damping are a promising technology for noise reduction in a broadband frequency.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.10
• /
• pp.2497-2502
• /
• 2014

The 5 wt.% Ga-doped zinc oxide (GZO) thin films were fabricated on PES substrates with various RF power 50~80 W by using RF magnetron sputtering in order to investigate the optical and electrical properties of GZO thin films. The XRD measurement showed that GZO thin films exhibit c-axis orientation. At a RF power of 70W, the GZO thin film showed the highest (002) diffraction peak with a Full-Width-Half-Maximum (FWHM) of $0.44^{\circ}$. AFM analysis showed that the lowest surface roughness (0.20 nm) was obtained for the GZO thin film fabricated at 70 W of RF power. The electrical property indicated that the minimum resistivity ($6.93{\times}10^{-4}{\Omega}{\cdot}cm$) and maximum carrier concentration ($7.04{\times}10^{20}cm^{-3}$) and hall mobility ($12.70cm^2/Vs$) were obtained in the GZO thin film fabricated at 70W of RF power. The optical transmittance in the visible region was higher than 80 %, regardless of RF power. The optical band-gap showed the slight blue-shift with increased in carrier concentration which can be explained by the Burstein-Moss effect.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.188-188
• /
• 2000

DLC (Diamond-Like Carbon) 박막은 높은 경도와 가시광선 및 적외선 영역에서의 광 투과도, 전기적 절연성, 화학적 안정성 및 저마찰.내마모 특성 등의 우수한 물리.화학적인 물성을 갖고 있기 때문에 여러 분야의 응용연구가 이루어지고 있다. 이러한 DLC 박막을 제작하는 과정에는 여러 가지가 있으나, 본 연구에서는 ECR-PECVD electron cyclotron resonance plasma enhanced chemical vapor deposition) 방법을 사용하였다. 이것은 최근에 많이 이용되고 있는 방법으로, 이온화률이 높을뿐만 아니라 상온에서도 성막이 가능하고 넓은 진공도 영역에서 플라즈마 공정이 가능한 장점이 있다. 기판으로는 4" 크기의 S(100)를 사용하였고, 박막을 제작하기 전에 진공 중에서 플라즈마 전처리를 하였다. 플라즈마 전처리는 Ar 가스를 150SCCM 주입시켜 5$\times$10-1 torr 의 진공도를 유지시키면서, ECR power를 700W로 고정하고, 기판 bias 전압을 -300 V로 하여 5분 동안 기판을 청정하였다. DLC 박막은 ECR power를 700W. 가스혼합비와 유량을 CH4/H2 : 10/100 SCCM, 증착시간을 2시간으로 고정하고, 기판 bias 전압을 0, -50, -75, -100, -150, -200V로 변화시켜가면서 제작하였다. 이때 ECR 소스로부터 기판까지의 거리는 150mm로 하였고, 진공도는 2$\times$10-2torr 였으며, 기판 bias 전압은 기판에 13.56 MHz의 RF power를 연결하여 RF power에 의해서 유도되는 negative DC self bias 전압을 이용하였다. 제작된 박막을 Auger electron spectroscopy, elastic recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.205-205
• /
• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

• Korean Journal of Materials Research
• /
• v.11 no.2
• /
• pp.88-93
• /
• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Korean Journal of Materials Research
• /
• v.11 no.2
• /
• pp.104-114
• /
• 2001

To investigate the effects of the addition of Nb and Sn on the recrystallization of Zr- Sn-Nb alloys, both Vickers micro-hardness test and TEP measurement were carried out on cold-worked specimens annealed at various temperatures from $300^{\circ}C$ to 75$0^{\circ}C$. The microstructures of heat treated specimens were analyzed by optical microscope, SEM, and TEM. The study of microhardness and microstructures showed that both recrystallization process and grain growth were retarded as the activation energy was increased by the addition of Nb and Sn. Especially, the addition of Sn was more effective on retarding recrystallization. Precipitates were formed more easily when Nb was added because the solubility of Nb into Zr is lower than that of Sn. However, the recrystallization process was affected more by Sn than Nb because the strain field formed by substitutional Sn repressed the dislocation movement. TEP was increased due to the decrease of electron scattering as recovery and recrystallization were proceeded and saturated when the recrystallization completed. However, when precipitates formed, TEP was increased because the decrease of solute concentration near the precipitates caused the decrease of electron scattering.

• Applied Chemistry for Engineering
• /
• v.30 no.3
• /
• pp.358-364
• /
• 2019

To improve the optical characteristics and antifouling of anti-reflective coating (AR) films, various AR coating films were prepared by varying the mixing ratio of tetraethylorthosilicate (TEOS)/base and methyltrimethoxysilane (MTMS)/acid hybrid solution. Prepared AR coating films were characterized by UV-Vis spectroscopy, contact angle analyzer, atomic force microscope (AFM), FT-IR and pencil scratch hardness test. In an AR coating film that prepared from the hybrid solution with a 10 wt% MTMS/acid solution, the glass substrate showed an excellent optical property (97.2% transmittance), good antifouling ($121^{\circ}$ water contact angle and $90^{\circ}\;CH_2I_2$ contact angle) and moderate mechanical strength (pencil hardness of 4 H). In particular, it is considered that the good antifouling was due to the well dispersion of the methyl group ($-CH_3$), derived from a small amount of MTMS/acid solution in the hybrid solution, on the substrate surface. From results of the pencil hardness test, the mechanical strength of AR coating film was improved as the content of MTMS/acid solution increased.

• Journal of Bio-Environment Control
• /
• v.28 no.4
• /
• pp.311-321
• /
• 2019

Greenhouse farmers often use thermal screens to reduce greenhouse heating expenses during the winter, and for shade during hot, sunny days in the summer, as it is an inexpensive solution to temperature control relative to other available options. However, accurate measurements of their emitted and absorbed radiations are important for the selection of suitable screens that offer maximum performance. Material's ability to save energy is highly dependent on these properties. Limited studies have investigated the measurement of these properties under natural conditions, but they are only applicable to materials having partial porosities. In this work, we describe a new radiation balance method for determining emissive power and absorptive capacity, as well as reflectivity, transmissivity and emissivity of materials having complete and partial transparency by using pyrgeometer and net radiometer. In this study, four materials with zero porosity, were tested. The emissivity value of PE, LD-13, LD-15 and PH-20 was $0.439{\pm}0.020$, $0.460{\pm}0.010$, $0.454{\pm}0.004$, and $0.499{\pm}0.006$, respectively. All tested samples showed high emitted radiation as compared to absorbed radiation.

• Membrane Journal
• /
• v.30 no.6
• /
• pp.395-408
• /
• 2020

Polymer electrolyte membrane fuel cells (PEMFCs) have gained much attention as eco-friendly energy conversion devices without emission of environmental pollutant. Polymer electrolyte membrane (PEM) that can transfer proton from anode to cathode and also prevent fuel cross-over has been regarded as a key component of PEMFCs. Although perfluorinated polymer membranes such as Nafion® were already commercialized in PEMFCs, their high cost and toxic byproduct generated by degradation have still limited the wide spread of PEMFCs. To overcome these issues, development of hydrocarbon based PEMs have been studied. Incorporation of cross-linked structure into the hydrocarbon based PEM system has been reported to fabricate the PEMs showing both high proton conductivity and outstanding physicochemical stability. This study focused on the various cross-linking strategies to the preparation of cross-linked PEMs based on hydrocarbon polymers with ion conducting groups for application in PEMFCs.

• Clean Technology
• /
• v.27 no.2
• /
• pp.132-138
• /
• 2021

Research is being conducted on graphene to provide graphene having both excellent physical as well as electrical properties in addition to unique physical properties. In this study, Hummer's method, which is a representative method for chemical exfoliation, was applied in order to investigate the possibility of the mass production of high-quality graphene oxide. Three types of graphite (graphite, crystalline graphite, and expanded graphite) were used in the preparation of graphene oxide with variations in the amount of potassium permanganate added, reaction temperature, and reaction time. Then a Fourier transform infrared spectroscopy (FT-IR), a Raman spectrometer, and a transmission electron microscope (TEM) were used to measure the quality of the prepared graphene oxide. Of the three types of graphite used in this experiment, crystalline graphite showed the highest quality. The prepared graphene oxide was then purified with an organic solvent, and an analysis conducted using energy dispersive X-ray spectroscopy (EDS). From the results of the residual values, we were able to confirm that both acid wastewater and wastewater were best purified using cyclohexane. The method for manufacturing graphene oxide as well as the method of purification using organic solvents that are presented in this study are expected to have less of an environmental impact, making them environmentally friendly. This makes them suitable for use in various industrial fields such as the film industry and for heat dissipation and as coating agents.