• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.103-107
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• 2007

When the gamma-ray source, $^{133}Cs$, embedded in a solid is placed at the center of a gold cylinder, the width of 81 keV level is shown to become narrower. This result implies a prolongation of the lifetime of that energy level. With a 0.5-mm-thick, 5-cm-long, 2-mm-diameter platinum cylinder, we obtain a width narrower by 6.1 % at 4.2 K.

• Journal of radiological science and technology
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• v.32 no.2
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• pp.213-218
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• 2009

A theoretical investigation has been carried out on how the energy width of the excited state of the nuclei is modulated when the $\gamma$-ray source is placed between two gold plates, at the center of the gold cylinder or the sphere. The width of the 81-keV level of $^{133}Cs$ is shown to become narrower by 3.7% at 4.2 K by reabsorption of $\gamma$ rays scattered backward from the parallel plates which are made of a 0.05-cm-thick, 3-cm-radius gold plates and separated from each other by 1.0 mm. With a 0.05-cm-thick, 5-cm-long, 1.0-mm-radius gold cylinder, we found that a width became narrower by 6.5%. In addition, when the nuclei is located in a spherical reflector of 1.0 mm in radius made of gold with a thickness of 0.5 mm. the level width is reduced by about 18.2% at a temperature 4.2 K. The results of this study indicates that the life-time of energy level was prolonged.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.135-140
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• 2011

By investigating photoluminescence (PL) spectra (20 K) of undoped and Be-doped p-type GaSb/GaAs epilayers, the origin has been analyzed by the change due to doping density. We have observed that the PL peak shifts to higher energy and the full-width half-maximum (FWHM) decreases with increasing the doping density below ${\sim}10^{17}cm^{-3}$, contrasted to shift to low energy and increasing FWHM above the density of ${\sim}10^{17}cm^{-3}$. From the variation of the integrated PL intensities of three peaks dissolved by Gaussian fit, it has been analyzed that, as the density increases, the $Be[Be_{Ga}]$ acceptor level (0.794 eV) reduces, whereas the intrinsic defect of $A[Ga_{Sb}]$ (0.778 eV) enhances together with a new $Be^*$ level (0.787 eV) locating between A and Be. We have discussed that it is due to coexistence of the Be acceptor level (${\Delta}E=16meV$) and the complex level (${\Delta}E=23meV$), $Be^*[Ga_{Sb}-Be_{Ga}]$combined by Be and A, in Be-doped p-GaSb, and that the level density of $Be[Be_{Ga}]$ may be reduced above ${\sim}10^{17}cm^{-3}$.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.7-12
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• 2013

We fabricated ZnO-ZnMgO single quantum well (SQW) samples having different well-widths by using the atomic layer deposition technique. The QW samples exhibit different optical transition behaviors with different QW widths. We confirm that when the well-width of 1.5 nm does not have a confined quantum energy level due to the Mg diffusion into the well caused by after-thermal treatment whereas the QWs wider than 1.5 nm show optical transitions between the confined energy levels.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.27-32
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• 2007

We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

• Journal of the Korean Magnetics Society
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• v.6 no.6
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• pp.405-410
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• 1996

Valence band photoemission spectroscopy (PES) measurements have been performed for $Co_{x}Pd_{100-x}$ alloy films using synchrotron radiation (x = 0, 25, 40, 65). Then the partial spectral weight distributions (PSW's) of Co 3d and Pd 4d electrons have been determined. The Co 3d PSW's exhibit some structures which are quite different from those of the Co film for x < 25 %, whereas they become very similar to those of the Co film for x > 40 %. For x < 25 %, the peak near the Fermi level ($E_F$) and a shoulder around 2 eV binding energy in the Co 3d PSW reflect large hybridization between Pd 4d and Co 3d electrons, suggesting that the hybridization might play an inportant role in determining perpendicualr magnetic anisotropy. The Pd 4d PSW's in Co-Pd alloy films are found to have larger FWHM's (full widths at half maximum), larger binding energies of the main peaks, and larger spectral intensities at $E_F$ than the PES spectrum of the Pd film. The FWHM of the Pd 4d PSW increases with decreasing Pd concentration, which are considered to reflect the disordering effect in the alloy formation or the change in the Pd 4d electronic structure due to hybridization between Co 3d and Pd 4d electrons.

• Korean Journal of Crystallography
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• v.14 no.1
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• pp.16-23
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• 2003

The electronic structure and chemical bonding of β-MnO₂ were theoretically investigated by DV-X/sub α/ (the discrete variation X/sub α/) method. which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The calculations on several cluster models having different sizes were carried out for the determination of a model suited for analyzing bulk state. The Mn/sub 15/O/sub 56/ model was selected as a sufficiently suitable model for the calculation of electronic state and chemical bonding by the comparison of the calculated XPS (X-ray photo-electron spectrum) and experimentally measured XPS. By using this model, the electron energy level, the density of state, the bond overlap population, the charge density distribution, and the net ionic transfer between cations and anions were calculated and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.425-425
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• 2010

유기 발광 소자는 차세대 디스플레이 소자와 조명 광원으로서 많은 응용성 때문에 활발한 연구가 진행되고 있다. 하지만 청색 유기 발광 소자는 적색과 녹색 유기발광소자들에 비해 상대적으로 발광효율이 낮고 색 순도가 떨어지며 수명이 짧기 때문에 전색 유기발광소자를 구현하는데 문제가 있다. 이런 문제점을 해결하기 위하여 청색 유기 발광소자의 재료 개발, 다층 이종구조 및 형광/인광성 물질의 도핑에 대한 연구가 진행되고 있다. 이와 더불어 색안정성과 색순도가 향상된 진청색 고효율 청색 유기발광소자는 백색유기발광소자의 응용성 때문에 이에 대한 연구가 주목을 받고 있다. 본 연구에서는 청색 유기 발광 소자의 발광효율을 높이고 색안정성과 색순도를 향상하기 위해 4,4'-Bis (2,2'-diphenyl-ethen-1-yl)biphenyl (DPVBi) 와 4,4'-Bis(carbazol-9-yl) biphenyl (CBP)로 구성된 나노크기의 폭을 가진 우물 형태의 이중 발광층 구조를 사용한 청색 유기발광소자를 제작하였다. 제작된 청색유기발광소자의 전기적 성질과 광학적 성질을 조사하여 색안정성 및 색순도 향상 메카니즘을 관찰하였다. DPVBi/CBP 이중 발광층을 가지는 청색 유기발광소자에서 CBP의 HOMO 에너지 준위의 값이 3.2 eV로 매우 크기 때문에 정공을 막는 정공 장벽층의 역할을 하게 되어 정공이 발광층에 머무르게 된다. 또한 DPVBi의 LUMO 값의 크기 5.8 eV, CBP의 LUMO 값의 크기는 6.3 eV이므로 상대적으로 CBP의 전자에 대한 주입장벽이 크기 때문에 발광층에 머무르는 전자의 양이 증가된다. 청색 발광층에 사용된 이중 발광층은 단일 발광층에 비해 더 많은 전자와 정공이 존재하기 때문에 전자-정공 재결합 확률을 높였으며 재결합 영역이 발광층 중심의 이중발광층 계면으로 이동하여 발광 영역이 국소화되어 전압변화에 따른 색의 변화가 적고 색순도가 더욱 향상되었다.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.483-490
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• 2003

We have analyzed theoretically optical pulse propagation in a coherent atomic medium for amplification without inversion (AWI), which is achieved by adding incoherent optical pumping to a typical EIT system. In order to explain experimental results [Kim et al., J. Phys. B, 36, 2671(2003)] to control the group velocity of the optical pulse by changing pumping power, we established a 5-level atomic system and applied density matrix equations. This AWI model system is different from previous AWI systems from the viewpoint of using two levels for incoherent optical pumping isolated optically from the EIT (electromagentically induced transparency) system so that more atoms can participate in pulse speed control. We have found that population transfer by collisions between ground states plays a decisive role for efficient AWI, and more atoms are effective for slowing the pulse. Our numerical results are in good agreement qualitatively with experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.178-178
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• 2008

ZnO 바리스터는 인가되는 전압에 따라 저항이 변하는 전압 의존형 저항체이며 각종 전기 전자 정보통신용 제품에 정전기(ESD) 대책용 소자로 폭 넓게 사용되는 전자 세라믹스 부품이다. 특별히 Bi-based ZnO 바리스터는 다양한 상(phase)으로 구성되어 있으며 그 입계의 전기적 특성은 소량 첨가되는 dopant의 종류에 따라 다양하게 변하는 것으로 알려져 있다. 본 연구에서는 Bi-based ZnO 바리스터 (ZnO-$Bi_2O_3$, ZnO-$Bi_2O_3-Mn_3O_4$)에서 각종 유전함수$(Z^*,M^*,\varepsilon^*,Y^*,tan{\delta})$를 이용하여 입계의 주파수-온도에 대한 특성을 살펴 보았다. 일반적인 ZnO 바리스터 제조법으로 시편을 제작하여 78K~800K 온도 범위에서 각종 유전함수를 이용하여 복소 평면도(complex plane plot)와 주파수 응답도(frequency explicit plot)의 방법으로 defect level과 입계 특성(활성화 에너지, 정전용량, 저항, 입계 안정성 등)에 대하여 고찰하였다. ZnO-$Bi_2O_3$(ZB)계와 ZnO-$Bi_2O_3-Mn_3O_4$(ZBM)계 모두 상온 이하의 온도에서 $Zn_i$와 $V_o$의 결함이 나타났으며, 이들의 결함 준위는 각 유전함수에 따라 다소 차이가 났다. 입계 특성으로 ZB계는 이상구간(560~660K)을 전후로 1.15 eV $\rightarrow$ 1.49 eV의 활성화 에너지의 변화가 나타났지만, ZBM계는 이러한 현상이 나타나지 않았다. 또한 입계 전위 장벽의 온도 안정성에 대해서는 Cole-Cole model을 적용하여 분포 파라미터 (distribution parameter; $\alpha$)를 구하여 고찰하였다. ZB계의 입계 안정성은 온도에 따라 불안정해 졌지만, ZBM계는 안정하였다.