• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.209.1-209.1
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• 2013

GaP는 가시광선 발광다이오드을 얻을 수 있는 적절한 재료중의 하나로 해당영역의 파장에 대하여 높은 양자효율을 얻을 수 있고, 깊은 준위 재결합이 없기 때문에 GaP 녹색 및 As 첨가한 GaAsP 적색 LED 에 적용할 수 있습니다. 또한, 상온에서 2.2 eV 에 해당하는 넓은 에너지 밴드갭을 가지고 있으므로, 소음이 없는 자외선 검출기에도 적합합니다. 이 물질에 대한 소자들은 기존에 GaP 기판을 사용하였습니다. 최근, GaP 와 격자상수가 비슷한 Si 기판을 활용하여 그 위에 성장하는 방법에 대한 관심이 많아졌습니다. Si는 물리적 및 화학적으로 안정하고 딱딱한 소재이며 대면적 기판을 쉽게 얻을 수 있어 전자 기기 및 대규모 집적 회로의 좋은 소재입니다. Si 와 대조적으로 GaP은 깨지기 쉬운 재료이며 GaP 기판은 Si와 같은 대면적 기판을 얻을 수 없습니다. 이러한 문제의 한 가지 해결책은 Si 기판위에 GaP 층의 성장입니다. GaP 과 Si의 조합은 현재의 광전소자 들에 더하여 더 많은 응용프로그램들을 가능하게 할 것입니다. 그러나, Si 기판위에 GaP 성장 시 삼차원적 성장 및 역위상 경계면과 같은 문제점들이 발생하므로 질이 높고 균일한 결정의 GaP 를 얻기가 어렵습니다. 따라서, Si 에 GaP 의 성장시 초기 단계를 제어하는 성장 기술이 필요합니다. 본 연구에서는, 유기금속화학증착법을 이용하여 Si 기판위에 양질의 GaP를 얻을 수 있는 최적의 성장조건을 얻고자 합니다. 실험 조건은 Si에 GaP의 에피택셜 성장의 초기 단계에 영향을 주는 V/III 비율, 성장압력, 기판방향 등을 가변하는 조건으로 진행하였습니다. V/III 비율은 100~6400, 성장 압력은 76~380 Torr로 진행하였고, Si 기판은 just(001)과 2~6도 기울어진 (001) 기판을 사용하였습니다.

• Journal of Adhesion and Interface
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• v.13 no.4
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• pp.188-192
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• 2012

Herein, CdS-coated PMMA nanoparticles were prepared by in-situ surfactant-free emulsion copolymerization and subsequent CdS coating process. As-prepared CdS/PMMA hybrid particles had 201.7 nm in diameter. The amount of CdS nanocrystals in the hybrid particles was 10.37 wt% determined by TGA and elemental analysis. The size of CdS crystals was 3.55 nm preferentially grown in (111) plane. UV-vis spectrum of PMMA/CdS nanoparticles showed the significant blue-shift in optical illumination. The reason was found because the synthesized CdS nanocrystals on PMMA particles had a different band gap energy of 2.70 eV which was significantly higher than that of known-value of bulk CdS (2.41 eV) due to a quantum confinement effect.

• Journal of IKEEE
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• v.22 no.4
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• pp.916-921
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• 2018

In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wide band gap, 4H-SiC is more advantageous than Si in high voltage and high current operation. In the conventional VDMOSFET structure using 4H-SiC, the breakdown voltage is limited due to the electric field crowding at the edge of the p-base region. Therefore, in this paper, we propose a Curvature VDMOSFET structure that improves the breakdown voltage and the static characteristics by reducing the electric field crowding by giving curvature to the edge of the p-base region. The static characteristics of conventional VDMOSFET and curvature VDMOSFET are compared and analyzed through TCAD simulation. The Curvature VDMOSFET has a breakdown voltage of 68.6% higher than that of the conventional structure without increasing on-resistance.

• The Journal of the Convergence on Culture Technology
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• v.7 no.2
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• pp.389-394
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• 2021

In this work, we study the properties of molecular structure and boundary orbital functions of the DPHMP-AlH and propiophenone and butyrophenone, which are forms of alkoxy-amine-aluminum derivatives. Furthermore, we investigate the effect on the selective reduction of the final products (R), (S)-phenylpropanol and (R), (S)-phenylbutanol by calculating the stereoscopic and thermodynamic parameters of the transition state. Considering the three-dimensional molecular structural stability, the transition status of (S) types DPHMP-AlH and alkylphenone was found to be more stable, resulting in the selective reductions of DPHM-AlH and alkylphenone from this result: (S)-(1)-phenylpropanol and (S)-(1)-phenylbutanol was confirmed that the formation was advantageous.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.5
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• pp.759-766
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• 2022

In this paper, we propose a multi-band small antenna with CPW(Coplanar Waveguide) feeding structure WLAN(Wireless Local Area Network) and WiMAX (Worldwide Interoperability for Microwave Access) bands. The proposed antenna is designed two slit in the modified monopole type radiator and FR-4 substrate, which is thickness 1.0 mm, and the dielectric constant is 4.4. The size of proposed antenna is 15.1 mm⨯16.41 mm, and total size of proposed antenna is 17.5 mm⨯16.4 mm. From the fabrication and measurement results, From the fabrication and measurement results, bandwidths of 439 MHz (2.06 to 2.499 GHz), 840 MHz (3.31 to 4.25) and 1,315 MHz (5.23 to 6.545 GHz) were obtained on the basis of -10 dB impedance bandwidth. Also, 3D radiation pattern characteristics of the proposed antenna are displayed and measured gains 2.24 dBi, 2.83 dBi, and 2.0 dBi shown in the three frequency band, respectively.

• Journal of IKEEE
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• v.26 no.4
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• pp.537-544
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• 2022

This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.

• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.130-136
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• 2022

Recently, organic semiconductor based indoor photovoltaics have gained attention since they exhibit excellent photovoltaic performance than that of conventional Si-based photovoltaics. In this study, we synthesize the medium bandgap polymer of PTBT and optimize PTBT:PC₇₁BM blend films by introducing solvent additives. To this end, we select DIO and CN solvent additives and vary their contents from 0 to 3 vol%. As a result, we produce the highest power conversion efficiency of 11.31% under LED 1000 lx conditions with DIO (1.5 vol%) + CN (0.5 vol%)

• The Journal of the Convergence on Culture Technology
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• v.9 no.4
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• pp.503-508
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• 2023

Tryptane derivatives are substances that treat acute migraines, and many studies have been conducted on analysis methods such as chromatography, electrochemistry, spectroscopy, and capillary electrophysiology. Recently, analytical chemists have become more interested in drug analysis and solving fundamental problems of biological importance. Therefore, in this study, the chemical properties of each derivative were investigated by calculating the total energy, band gap, electrostatic potential, and charge of Sumatriptan, Lizatriptan, Naratriptan, and Eletriptan using HyperChem8.0's semi-empirical PM3 method. As a result of this study, in the case of Sumatriptan, Naratriptan, and Eletriptan, chemical reactions are expected to proceed centering on oxygen and nitrogen atoms bonded to sulfur atoms. In addition, in the case of Rizatriptan without a sulfur atom, it was shown that the chemical reaction proceeds at the 17th and 19th nitrogens of the 5-membered heterocyclic compound.

• Korean Journal of Mineralogy and Petrology
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• v.36 no.4
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• pp.365-376
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• 2023

Songaksan, formed about 3800 year ago, is one of the tuff rings in the Jeju Island. Mantle xenoliths, spinel peridotites, are enclosed in the Songaksan Trachybasalt. The spinel peridotites are less than 2 cm in size and are composed of olivine, orthopyroxene, clinopyroxene, and spinel. The uniform compositions of the minerals from core to rim indicate that equilibrium was reached in the spinel peridotites before these were enclosed in the host magma. The spinel peridotites originated at depths between 55 and 60 km with equilibrium temperatures ranging from 915 to 968℃. The spinel peridotites from Songaksan reveal porphyroclastic texture with a lot of neoblast minerals. Olivines display strong kink banding, indicating that the upper mantle of Songaksan has been deformed. The spinel peridotites from Songaksan have undergone about 5~7% fractional melting, and cryptic metasomatism by an silicate melt. The period of entrainment and transport of the spinel peridotites in the host magma is about 15 days.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.6
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• pp.1067-1072
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• 2023

We prepared AZO (Al₂O₃ : 3 wt %) thin films according to the substrate temperature using the pulsed laser deposition method and the structural, electrical, and optical properties of the thin films were investigated. The AZO thin film deposited at 400℃ showed the best (002) orientation and the FWHM was 0.38°. As a result of the investigation of electrical properties, it was confirmed that the carrier concentration and mobility increased and the resistivity decreased as the substrate temperature increased. The average transmittance in the visible light region showed a high value of 85% or more regardless of the substrate temperature. The Burstein-Moss effect, in which the carrier concentration would increase with increasing substrate temperature thereby widening the energy band gap, was also observed. The resistivity and the figure of merit of the AZO thin film deposited at a substrate temperature of 400℃ were 6.77 × 10^-4 Ω·cm and 1.02 × 10⁴ Ω^-1·cm^-1 respectively, showing the best value.