• Composites Research
• /
• v.32 no.5
• /
• pp.229-236
• /
• 2019

In this study, the effects of the additional processing parameters on the mechanical properties of thermoplastic composites fabricated with automated fiber placement (AFP) were evaluated. Annealing and vacuum bag only processes were then performed on the manufactured thermoplastic composites, respectively. For verification, the crystallinity was measured by differential scanning calorimetry (DSC), confirming the variation of semi-crystalline thermoplastic composite according to the process conditions. The void content of thermoplastic composites was evaluated by matrix digestion method while microscopic examination confirmed the porosity distribution. The interlaminar shear strength test was conducted for three different process parameters (VBO, annealing, and no treatment). A comparison of the three tested strengths was made, revealing that the porosity value had larger effect on the mechanical properties of the thermoplastic composite compared to the degree of crystallinity. Additionally, when thermoplastic composite melted up, the pores were continuously removed under vacuum process; the removal of the pores resulted in an increase of the interlaminar shear strength.

• Korean Journal of Metals and Materials
• /
• v.56 no.12
• /
• pp.861-869
• /
• 2018

To determine the origin of the inhomogeneous microstructure and texture observed in drawn and annealed high purity copper wires, two kinds of drawing process conditions and their influence was investigated. The regular condition, based on a symmetric die, and a condition designed intentionally to produce an inhomogeneous shear deformation using an asymmetric die were employed. The difference in intensity of <111>-<100> distributed texture between the two wires confirmed that the wire drawn under the asymmetric die condition experienced a higher amount of shear deformation. The extensive shear strain in the wire drawn under the asymmetric die condition gave rise to inhomogeneous primary and secondary recrystallization behavior. After annealing at $200^{\circ}C$, grains with <100> texture, which were larger than the surrounding recrystallized grains, were extensively present on one half circle of the wire drawn under the asymmetric die condition, while larger grains with <100> were sparsely observed around the middle region of the wire drawn under the regular condition. Interestingly, the area where the larger grains with <100> texture existed was identical to the area where the high shear strain occurred during drawing in both wires. During annealing at $400^{\circ}C$, grains with <112> texture started to grow abnormally at the center of both wires as a result of secondary recrystallization. After annealing at $900^{\circ}C$ grains with <112> due to secondary recrystallization occupied the entire region of the wire drawn under the regular condition. On the other hand, in the wire drawn under the asymmetric die condition and then annealed at $900^{\circ}C$, the <100> oriented grains as a result of the normal grain growth of the larger <100> grains which were observed after annealing at $200^{\circ}C$, coexisted with the abnormally grown <112> grains. These results indicate that dynamic recrystallization induced by the shear strain during drawing plays an important role in the inhomogeneity of the microstructure and texture of wires after annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.1
• /
• pp.88-92
• /
• 2023

The ferroelectricity in Hf_0.5Zr_0.5O₂ (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

• Journal of Industrial Convergence
• /
• v.21 no.3
• /
• pp.189-194
• /
• 2023

Recently, various studies on flexible electronic devices have been performed. In this study, the potential of Ag nanowires was evaluated as a material to replace the ITO transparent conductive film. Ag nanomaterials were formed on the glass by a novel brush coating method and an argon plasma evaporation method based on atmospheric pressure plasma. First, the Ag solution is coated on the glass with a brush, and the remaining solvent is removed with atmospheric plasma. During this process of solvent evaporation, a sound is generated by the reaction between the atmospheric plasma and the solvent. Therefore, the remaining amount of the solvent can be confirmed. In order to observe optical properties and electrical results such as reflectance, transmittance, and absorbance according to the number of coatings of the film, the results were analyzed by coating up to 5 times. For the purpose of investigating the interaction of light with Ag nanowires, reflectance and transmittance were measured while changing the wavelength of light from 200 nm to 800 nm. In the case of absorbance, the trend of increasing light absorption of the Ag nanowires according to the coating was clearly confirmed. The electrical properties showed a great change from the time of coating more than 4 times, and in particular, the resistance value was lower than kΩ/cm2 when the coating was applied 5 times. Based on these optical and electrical results, we plan to verify the possibility of a transparent conductive film by applying it to electronic devices in the future.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.3
• /
• pp.192-200
• /
• 2023

Graphene, a two-dimensional material, has shown great potential in a variety of applications including microelectronics, optoelectronics, and graphene-based batteries due to its excellent electronic conductivity. However, the production of large-area, high-quality graphene remains a challenge. In this study, we investigated graphene growth on electrolytic copper foil using thermochemical vapor deposition (TCVD) to achieve a similar level of quality to the cold-rolled copper substrate at a lower cost. The combined effects of pre-annealing time, graphenized temperature, and partial pressure of hydrogen on graphene coverage and domain size were analyzed and correlated with the roughness and crystallographic texture of the copper substrate. Our results show that controlling the crystallographic texture of copper substrates through annealing is an effective way to improve graphene growth properties, which will potentially lead to more efficient and cost-effective graphene production. At a hydrogen partial pressure that is disadvantageous in graphene growth, electrolytic copper had an average size of 8.039 ㎛², whereas rolled copper had a size of 19.092 ㎛², which was a large difference of 42.1% compared to rolled copper. However, at the proper hydrogen partial pressure, electrolytic copper had an average size of 30.279 ㎛² and rolled copper had a size of 32.378 ㎛², showing a much smaller difference of 93.5% than before. This observation suggests this potentially leads the way for more efficient and cost-effective graphene production.