• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.160-164
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• 2008

The Characterization of $MgB_2$ Thin Film by Slow Positron Annihilation Spectroscopy Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of $MgB_2$ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ${\mu}m$ $MgB_2$ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the $MgB_2$ superconductor.

• Nuclear Engineering and Technology
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• v.25 no.1
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• pp.71-79
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• 1993

Positron annihilation characteristics and microhardness of 25% cold worked and isochronally annealed hafnium specimens were measured to study recovery and recrystallization stages of hafnium specimens. The annihilation lifetime of positrons in hafnium has been measured for the distinct cases of annihilation in the annealed lattice and annihilation after trapping at lattice defects generated by cold deformation at room temperature. The annihilation lifetime in the annealed lattice was 187 $\pm$3.7 psec, whereas it was 217 $\pm$ 4.2 psec for positrons trapped at deformation-induced defects (mostly dislocations). The changes in Doppler broadening and hardness showed similar trend in the recrystallization range, however, the measured value of Doppler broadening variation were quite sensitive to changes in the recovery region in which the variation in hardness value was completely insensitive. Recovery of cold worked hafnium initiated at about 623 K and recrystallization occurred at around 1023 K.

• Electronics and Telecommunications Trends
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• v.2 no.4
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• pp.20-33
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• 1987

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.367-373
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• 2011

It is described that the proton beam induces micro defects and electronic deep levels in Cz single crystal silicon. Enhance signal-to-noise ratio, Coincidence Doppler Broadening Positron Annihilation Spectroscopy has been applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 4.0 MeV proton beams ranging from 0 to ${\sim}10^{14}$ ptls. The S-parameter values were increased as increasing the irradiated proton beam, that indicated the defects generate more.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.250-256
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• 2013

It is described that the proton beam induces micro-size defects and electronic deep levels in luminescence Thin Film. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) and Positron lifetime Spectroscopy were applied to study of characteristics of a poly crystal samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S-parameter value. The samples were exposed by 3.0 MeV proton beams with the intensities ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values decreased as increased the proton beam, that indicates the protons trapped in vacancies. Lifetime ${\tau}_1$ shows that positrons are trapped in mono vacancies. Lifetime ${\tau}_2$ is not changed according to proton irradiation that indicate the cluster vacancies of the grain structure.

• Nuclear Engineering and Technology
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• v.22 no.4
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• pp.337-350
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• 1990

A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B Cl.1 base metal irradiated to a dose of 4.84$\times$10$^{18}$ n/$\textrm{cm}^2$ at about 38$0^{\circ}C$. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature range of 280-3O5$^{\circ}C$, Michrohardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurrs in the temperature range of 280-305$^{\circ}C$. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy agglomeration and the annihilation of monovacancies are the first recovery process. The second recovery process occurs in the range of 405-49$0^{\circ}C$ and positron annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in the range of 305-405$^{\circ}C$ between the temperature ranges for the two processes occurs due to the formation of carbon-decorated vacancy clusters and precipitates. The activation energies, orders of reaction and other characteristics of recovery processes were determined by the Meechan-Brinkman method. The activation energy for the first recovery process was determined as 1.76 eV and that for the second recovery process as 2.00eV. These values are lower than those obtained by other workers. This difference may be attributed to the lower copper content of the RPV steel used in the present study. The order of reaction for the first recovery process was determined as 1.78, while that for the second recovery process as 1.67 Non-integer orders of reaction for recovery processes seem to be attributed to the fact that several mechanisms for the first order and the second order of reaction are compounded in one process. This result also supports for the above conclusions from measurements of PA parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.259-259
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• 2010

본 연구는 양전자 소멸 측정 분광법을 통하여 BaSrFBr:Eu 형광물질의 결함 농도 분석을 시도하였다. LABO를 이용한 동시계수 도플러 방법과 Fast - Slow - Coincidence 시스템으로 구성한 양전자 수명 분광법을 통하여 에너지의 변화에 따른 양성자 조사에 의한 시료 결함에 따른 동시 계수 도플러법과 양전자 수명의 변화를 측정 하였으며, SRIM 시뮬레이션을 통한 에너지에 따른 양성자 투과 깊이의 변화를 연구하였다.

• Proceedings of the Korean Society of Radiological Science
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• 2002.06b
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• pp.32.3-32.3
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• 2002

• Radioisotope journal
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• v.4 no.2
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• pp.4-10
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• 1989

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.146-146
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• 1996