• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.423-426
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• 2002

Undoped-GaN thin film is deposited on Sapphire substrate by MOCVD. SAW velocity is measured with tile center frequency by HP8753C. Center frequency is 266.52 MHz and SAW velocity is 5330㎧ when wavelength was 20 Um. insertion loss, Q factor and side love attenuation is 41.265 dB, 257.41 and over 23 dB. k'i is calculated from tile measured data. k2'is from 1 % to 4 %. TCF is -61.817pp/m/$^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.531-537
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• 2006

A micromachined piezoelectric microspeaker was fabricated with a highly c-axis oriented ZnO thin film on a silicon-nitride film having compressive residual stress. When it was measured 3 mm away from the microspeaker in open field, the largest sound pressure level produced by the fabricated microspeaker was about 91 dB at around 2.9 kHz for the applied voltage of $6\;V_{peak-to-peak}$. The key technologies to these successful results were as follows: (1) the usage of a wrinkled diaphragm caused by the high compressive residual stress of silicon-nitride thin film, (2) the usage of the highly c-axis oriented ZnO thin film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.495-501
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• 2000

This paper presents a method to minimize the initial deflection of a multi-layer piezoelectric microactuator without loosing its piezoelectric deflection performance required for light modulating micromirror devices. The multi-layer piezoelectric actuator composed of PZT silicon nitride and platinum layers deflects or buckles due to the gradient of residual stress. Based on the structural analysis results and relationship between process conditions and mechanical properties we have modified the fabrication process and the thickness of thin film layers to reduce the initial residual stress deflection without decreasing its piezoelectric deflection performance. The modified designs fabricated by surface-micromachining process achieved the 77% reduction of the initial deflection compared with that of the conventional method based on the measured micromechanical material properties is applicable to the design refinement of multi-layer MEMS devices and micromechanical structures.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1455-1460
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• 2007

This paper reports the piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film deposited onto Mo/Ti electrode. This successful achievement, compared to the previous results, is followed by manipulating two material properties: the one is to use a compressively stressed silicon nitride film as a supporting diaphragm (even tensile stressed, around +20 MPa) and the another is to use high quality AlN thin film with compressive residual stress (less than -100 MPa). With these materials, the Sound Pressure Level (SPL) of the fabricated micro speakers shows more than 60 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with 20 Vpeak-to-peak sinusoidal input and with 10 mm distances from the fabricated micro speakers to the reference microphone (B&K Type 2669 & 4192L).

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.4
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• pp.395-399
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• 2008

The purpose of this paper is to investigate the fabrication of P(VDF-TrFE) organic thin films through the vapor deposition method and the piezoelectric properties of the organic thin films thus produced. Vapor deposition was performed under the following conditions: the working temperature, and the pressure of reaction chamber were $300^{\circ}C$, and $2.0{\times}10^{-5}$ Torr, respectively. The molecular structure and crystallinity of the evaporated organic thin films were evaluated by using a FT-IR (Fourier-Transform Infrared spectroscopy) and XRD (X-ray diffractometry), The results showed that crystallinity increased with an increase in the substrate temperature. When the P(VDF-TrFE) organic thin films were fabricated by increasing the substrate temperature, its piezoelectric coefficient($d_{33}$) increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.275-278
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• 2003

The aim of the study is to scrutinize the relationship between the area of resonance and center frequency with varying thickness by analyzing the characteristics of 2-port resonator. This was done through ideal design using Leach model equivalent model modified Mason model equivalent circuit for the application of bandpass filter high-frequency band with resonator Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.229-232
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• 2005

This paper presents the design and fabrication of backflow prevented Micropump using the metal membrane. The Micropump is consisted of the lower plate, metal membrane, upper plate and the piezoelectric-element. The lower plate includes the micro channel and the inlet, outlet of the Micropump. The upper plate includes the micro channel and connects the piezoelectric-element. These plate are fabricated on the Pyrex glass wafer by sandblasting process. The metal membrane does roll of check valve that is prevented backflow of the Micropump. The metal membrane is fabricated on the stainless steel by laser machining. Piezoelectric-element is actuated the Micropump and controlled flowing of fluid. The Micropump is fabricated by bonding process of these multi-layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.34-34
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• 2003

Piezoelectric or magnetostrictive materials, known as smart materials, have been researched widely for sensors or actuators in micro system technology. In our research, thick sol-gel lead zirconate titanate(Pb(Zr$\sub$1-x/Ti$\sub$x/)O$_3$) films were fabricated and their characteristics were investigated f3r angular rate sensor applications. The thickness of the PZT films is 1.5${\mu}$m, which is required by a vibration angular rate sensor for a good actuation and sensing. The remnant polarization of the PZT flms is 12.0 ${\mu}$C/$\textrm{cm}^2$. The electromechanical constants of PZT thin film showed the value of susceptance(B) of 4800${\mu}$ s at capacitance of 790pF. The PZT films were applied to the vibration angular rate sensor structure and the vibration of 1.78 ${\mu}$m in amplitude at the resonant frequency of 35.8㎑ was obtained by driving voltage of 5V$\sub$p-p/ of bulk piezoelectric materials with out of phase signal through voltage and inverting amplifier.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.222-227
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• 2020

Pb(Zr,Ti)O₃(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb_1.3(Zr_0.52Ti_0.48)O₃. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm². This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.