• Title/Summary/Keyword: 압저항체

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Study on Plezoresistive Effect and Resistor Positioning of Silicon Pressure Sensor (반도체 압력센서의 압저항 효과와 압저항체 위치 선정 연구)

  • Park, Se-Kwang;Park, Sung-June
    • Proceedings of the KOSOMBE Conference
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    • v.1990 no.11
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    • pp.75-79
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    • 1990
  • 반도체 및 전자공업의 급속한 발달에 힘입어 압력센서가 소형, 경량, 대량 생산화됨으로써 의료용으로의 사용이 최근 급속히 늘고 있다. 따라서 본 논문은 현재 가장 활발히 개발되고 있는 압저항형 압력 센서의 원리인 압저항 효과에 대해 이론적인 분석을 상세히 소개하였다. 그리고 기존에 많이 소개된 바 있는 정사각형 모양의 박막모서리 중앙 부분에 위치한 압저항체의 설계 보다 직사각형 박막 중심에 위치한 압저항체의 설계가 우수한 특성을 보일 수 있는 이론적 근거를 설명한다.

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Fabrication and Characterization of Transparent Piezoresistors Using Carbon Nanotube Film (탄소나노튜브 필름을 이용한 투명 압저항체의 제작 및 특성 연구)

  • Lee, Kang-Won;Lee, Jung-A;Lee, Kwang-Cheol;Lee, Seung-Seob
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.12
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    • pp.1857-1863
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    • 2010
  • We present the fabrication and characterization of transparent carbon nanotube film (CNF) piezoresistors. CNFs were fabricated by vacuum filtration methods with 65?92% transmittance and patterned on Au-deposited silicon wafer by photolithography and dry etching. The patterned CNFs were transferred onto poly-dimethysiloxane (PDMS) using the weak adhesion property between the silicon wafer and the Au layer. The transferred CNFs were confirmed to be piezoresistors using the equation of concentrated-force-derived resistance change. The gauge factor of the CNFs was measured to range from 10 to 20 as the resistance of the CNFs increased with applied pressure. In polymer microelectromechanical systems, CNF piezoresistors are the promising materials because of their high sensitivity and low-temperature process.

The evaluation of the effect of residual stress induced in piezoresistor on resistance change ratio distribution (압저항체에서 발생하는 잔류응력이 저항변화율 분포도에 미치는 영향성 평가)

  • Shim J.J.;Han G.J.;Lee S.W.;Lee S.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.790-793
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    • 2005
  • In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the effect of residual stress induced in piezoresistor on the distribution of resistance change ratio and supposed the feasible position of piezoresistor. The resulting are following; The tensile residual stress in the vicinity of piezoresistor decreased the value of resistance change ratio and could not effect on all the area of diaphragm but local area around the piezoresistor. Also, the piezoresistor in the diaphragm type pressure sensor with boss should fabricate in the edge of boss in order to increase the sensitivity of pressure sensor.

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Comparison of the Characteristics of Metal Membrane Pressure Sensors Depending on the Shape of the Piezoresistive Patterns (금속 멤브레인 압력 센서에서 압저항체 패턴 형태에 따른 특성 비교)

  • Jun Park;Chang-Kyu Kim
    • Journal of Sensor Science and Technology
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    • v.33 no.3
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    • pp.173-178
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    • 2024
  • Development of pressure sensors for harsh environments with high pressure, humidity, and temperature is essential for many applications in the aerospace, marine, and automobile industries. However, existing materials such as polymers, adhesives, and semiconductors are not suitable for these conditions and require materials that are less sensitive to the external environment. This study proposed a pressure sensor that could withstand harsh environments and had high durability and precision. The sensor comprised a piezoresistor pattern and an insulating film directly formed on a stainless-steel membrane. To achieve the highest sensitivity, a pattern design method was proposed that considered the stress distribution in a circular membrane using finite element analysis. The manufacturing process involved depositing and etching a dielectric insulating film and metal piezoresistive material, resulting in a device with high linearity and slight hysteresis in the range of a maximum of 40 atm. The simplicity and effectiveness of this sensor render it a promising candidate for various applications in extreme environments.

The effect of the boss and mass on the sensitivity of the piezoresistive sensor (압저항 센서에서 보스와 매스가 센서 민감도에 미치는 영향)

  • Shim, Jae-Joon;Lee, Sung-Wook;Han, Dong-Seop;Kim, Tae-Hyung;Han, Geun-Jo
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • v.29 no.1
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    • pp.405-410
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    • 2005
  • In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the distribution of the resistance change ratio on the diaphragm and bridge surface where piezoresistor would be formed, and proposed the proper size and position of piezoresistor with which the sensitivity of sensor was increased. As the width of mass and boss was increased, the distance between piezoresistors was closed and the maximum value of resistance change ratio was decreased by the increase of the structure stiffness.

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Pressure sensor using shear piezoresistance of polysilicon films (폴리실리콘의 전단 압저항현상을 이용한 압력센서)

  • Park, Sung-June;Park, Se-Kwang
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.31-37
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    • 1996
  • This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of $1kgf/cm^{2}$, ${\pm}0.012%FS/^{\circ}C$ of TCO, and ${\pm}0.08%FS/^{\circ}C$ of TCS in the temperature range of $-20{\sim}+125^{\circ}C$. It showed ${\pm}0.2%FS$ of hysteresis and ${\pm}1.5%FS$ of non-linearity. Shear-type polycrystalline silicon pressure sensor can eliminate temperature dependence of offset caused by resistors mismatch and be used in relatively wide temperature range, compared to the conventional full-bridge silicon pressure sensors.

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Development of PDMS-based Drag Force-type Flowmeter with Graphite-CNT Composite as Piezoresistive Material (흑연과 CNT 복합체를 압저항체로 하는 PDMS 기반의 바람저항형 유속센서 개발)

  • Sang Jun Park;Min Gi Shin;Noh Yeon Kim;Sang Hoon Lee
    • Journal of Sensor Science and Technology
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    • v.32 no.1
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    • pp.44-50
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    • 2023
  • In this study, a polydimethylsiloxane (PDMS)-based drag force-type flowmeter was fabricated using a graphite-carbon nanotube (CNT) composite as a piezoresistive material and evaluated. The device was in the form of a cantilever, which was composed of the soft material, PDMS, and fabricated using a mold manufactured by a three-dimensional printer. The cost-effective graphite was mixed with CNTs to serve as a piezoresistive material. The optimal mixing ratio was investigated, and the piezoresistive material formed using a graphite:PDMS:CNT ratio of 1.5:1:0.01 was adopted, which showed a stable output and a high sensitivity. Various forward and backward air flows in the range of 0-10 m/s were measured using the fabricated flowmeter, and both tensile and compression characteristics were evaluated. The measured results showed a stable output, with the resistance change gradually increasing with the air flow rate. Repeatability characteristics were also tested at a repeated air flow of 10 m/s, and the flowmeter responded to the applied air flow well. Consequently, the fabricated device has a high sensitivity and can be used as a flowmeter.

Fabrication of silicon piezoresistive pressure sensor for a biomedical in-vivo measurements (생체 in-vivo 측정용 실리콘 압저항형 압력센서의 제조와 그 특성)

  • Bae, Hae-Jin;Son, Seung-Hyun;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.10 no.3
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    • pp.148-155
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    • 2001
  • A pressure sensor on the tip of a catheter which is utilized to measure the in-vivo pressure in a human body was fabricated and the characteristic of the pressure sensor as measured. To fit into a catheter with 1 mm caliber, samples of $150\;{\mu}m$(thickness) ${\times}$ (600, 700, 800, 900, 1000) ${\mu}m$(width) ${\times}2\;mm$(length) was fabricated. The thicker face with $450\;{\mu}m$ thickness of SDB wafer was made thin to $134\;{\mu}m$ thickness using KOH etchant and it made possible to fabricate sensor cell with the width shorter than 1 mm. Different to the whitstone bridge sensor, we formed one piezoresistor and one reference resistor in sensor. Therefore there are possibilities of reduction of the sensitivity, then by using the simulation tool ANSYS 5.5.1, the location and the type of the piezoresistor was optimized. Another piezoresistor type of sensor which contain one longitudinal and one transverse piezoresistor was fabricated at the same time, but the sensitivity was not improved very much. To get the output versus the pressure, a constant current source and a implementation amplifier was used. As a result, the maximum sensitivity of the sensor with one piezoresistor was $1.6\;{\mu}V/V/mmHg$.

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