• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.439-446
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• 2004

This paper describes high speed and low power design techniques for an 8-bit 500MSamples/s CMOS 2-step ADC. Instead of the conventional closed-loop architecture, the newly proposed ADC adopts open-loop architecture and uses a reset-switch to reduce loading time in an environment of big parasitic-capacitances of mux-array. An analog-latch is also used to reduce power consumption. Simulation result shows that the ADC has the SNDR of 46.91㏈ with a input frequency of 103MHz at 500Msample/s and consumes 203㎽ with a 1.8V single power supply. The chip is designed with a 0.18mm 1-poly 6-metal CMOS technology and occupies active area of 760${\mu}{\textrm}{m}$*800${\mu}{\textrm}{m}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.65-73
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• 2006

This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.113-118
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• 2016

In this paper, a read-in integrated circuit (RIIC) for IR scene projectors (IRSPs) adopting a sub-frame control technique is proposed, which minimizes the reduction of the apparent temperature of the IR images projected from IRSPs operating at a frame rate of 30 Hz. The proposed sub-frame control technique significantly reduces the amount of scene data loss on capacitors, which is caused by leakage currents flowing through MOSFET switches during holding periods, by dividing a unit frame into 8 sub-frames and refreshing the same scene data for each sub-frame. A current-drive RIIC was designed for the higher apparent temperature of IR radiated from the emitter, and it receives the scene data as a form of analog voltages from an external DAC. A prototype chip with a $64{\times}32$ RIIC array was fabricated using Magnachip/SKhynix $0.35{\mu}m$ 2-poly 4-metal CMOS process, and the measured maximum output data current is $230.3{\mu}A$. This amount of current ensures the projection of IR images whose maximum apparent temperature is $366.2^{\circ}C$ in the mid-wavelength IR (MWIR) when applied to a prototype emitter having a resistance of $15k{\Omega}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.61-69
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• 2010

In this paper, an 1.2V 8b 800MSPS A/D Converter(ADC) with an odd number of folding block to overcome the asymmetrical boundary-condition error is described. The architecture of the proposed ADC is based on a cascaded folding architecture using resistive interpolation technique for low power consumption and high input frequency. The ADC employs a novel odd folding block to improve the distortion of signal linearity and to reduce the offset errors. In the digital block, furthermore, we use a ROM encoder to convert a none-$2^n$-period code into the binary code. The chip has been fabricated with an $0.13{\mu}m$ 1P6M CMOS technology. The effective chip area is $870{\mu}m\times980{\mu}m$. SNDR is 44.84dB (ENOB 7.15bit) and SFDR is 52.17dBc, when the input frequency is 10MHz at sampling frequency of 800MHz.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.231-240
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• 2003

The problem of power consumption and the limitation of a chip area should be considered when the pixel number of the edge detection circuit increases to fabricate a vision chip for edge detection with high resolution. The numeric increment of the unit circuit causes power consumption to increase and require a larger chip area. An increment of power consumption and a limitation of chip area with several ten milli-meters square supplied by the CMOS foundry company restrict the pixel numbers of the edge detection circuit. In this paper, we proposed a electronic switch to minimize the power consumption owing to the numeric increment of the edge detection circuit to realize a vision chip for edge detection with high resolution. We also applied a method by which photodetector and edge detection circuit are separated to implement a vision chip with a higher resolution. The photodetector circuit with $128{\times}128$ pixels uses a common edge detection circuit with $1{\times}128$ pixels so that resolution was improved at the same chip area. The chip size is $4mm{\times}4mm$ and the power consumption was confirmed to be about 20mW using SPICE.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.79-85
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• 2016

Recently, visible light communication(VLC) is being actively researched as green wireless communication services are drawing attention. Currently, VLC mostly uses LED for transmission and PD(Photo Diode) for receiving. However, this kind of system has limited applications. Therefore, we design and propose in this paper, a LED-to-LED two way VLC system that doesn't use PD(Photo Diode). This system has the following features and contributions. First, this system uses just LED at both transmitter and receiver with analog switch, Second, this system support both one-way communication and two way communication together. One way communication can support multi-hop communication. The performance evaluation of the proposed system is conducted at a place with standard light. We test the success or failure of one way communication by changing distance and baud rate while test the success and failure of two way communication by changing distance. We expect that the proposed LED-to-LED system in this paper can be applied for various application fields.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.4
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• pp.266-274
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• 2024

In this paper, we designed a low-area 32-bit PF (Poly-fuse) OTP IP, a non-volatile memory that stores data required for analog circuit trimming and calibration. Since one OTP cell is constructed using two PFs in one select transistor, a 1cell-2bit multibit PF OTP cell that can program 2bits of data is proposed. The bitcell size of the proposed 1cell-2bit PF OTP cell is 1/2 of 12.69㎛ × 3.48㎛ (=44.161㎛2), reducing the cell area by 33% compared to that of the existing PF OTP cell. In addition, in this paper, a new 1 row × 32 column cell array circuit and core circuit (WL driving circuit, BL driving circuit, BL switch circuit, and DL sense amplifier circuit) are proposed to meet the operation of the proposed multbit cell. The layout size of the 32bit OTP IP using the proposed multibit cell is 238.47㎛ × 156.52㎛ (=0.0373㎛2) is reduced by about 33% compared that of the existing 32bit PF OTP IP using a single bitcell, which is 386.87㎛ × 144.87㎛ (=0.056㎛2). The 32-bit PF OTP IP, designed with 10 years of data retention time in mind, is designed with a minimum programmed PF sensing resistance of 10.5㏀ in the detection read mode and of 5.3 ㏀ in the read mode, respectively, as a result of post-layout simulation of the test chip.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.