• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.156-161
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• 1998

We developed aerosol flame deposition method and made stress-free Pyrex-based optical waveguide on silicon substrate using this method. Zr is doped to control the refractive index of Pyrex waveguide layers. The refractive index of the film changes from 1.460 to 1.475 as the content of Zr changes from 0 to 3 wt%. Er is doped to see the possibility of applying this Pyrex waveguide as PLC-type (Planar Lightwave Circuit) optical amplifier. The refractive index of the film changes from 1.460 to 1.465 as the content of Zr changes from 0 to 1 wt%. Light launching using a prism coupler to the fabricated waveguide showed good quality for application to PLC. The polarization dependence of refractive-index of the Pyrex film is measured to be less than $2{\times}10^{-4}$.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.48-55
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• 2016

Ambient-light sensor system, which changes the brightness of a display as ambient light change, was studied to reduce the power consumption of the mobile applications such as note PC, tablet PC and smart phone. The ambient-light sensor system should be integrated on a display panel to improve the complexity and cost of mobile applications, so the ambient-light sensor and readout circuit was integrated on a display panel using low-temperature poly-silicon thin film transistors (LTPS-TFT). We proposed the new compensation method to correct the panel-to-panel variation of the ambient-light sensors, without additional equipment. We designed and investigated the new readout circuit with the proposed compensation method and the analog-to-digital converter for the final digital output of ambient light. The readout circuit has very simple structure and control timing to be integrated with LTPS-TFT, and the input luminance ranges from 10 to 10,000 lux. The readout rate is 100 Hz, and maximum differential non-uniformity with 20 levels of the final output below 0.5 LSB.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1522-1526
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• 2005

In this study, the fabrication of large area silicon mirror is accomplished by anisotropic etching using MEMS for implementation of integrated optical pickup and the process condition is also established for improving the mirror surface roughness. Until now, few results have been reported about the production of highly stepped $9.74^{\circ}$ off-axis-cut silicon wafer using wet etching. In addition rough surface of the mirror is achieved in case of long etching time. Hence a novel method called magnetorheolocal finishing is introduced to enhancing the surface quality of the mirror plane. Finally, areal peak to valley surface roughness of mirror plane is reduced about 100nm in large area of $mm^2$ and it is applicable to optical pickup using infrared wavelength.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.153-160
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• 2010

We optimized the Si(substrate)/$SiO_2$(cladding)/$Si_3N_4$(antiresonant cladding)/$SiO_2$(core)/air multi-layers rib-optical waveguides of antiresonant reflecting optical waveguide (ARROW) for integrated optical biosensor structure utilizing beam propagation method (BPM). Thickness of anti-resonant cladding was derived to minimize the propagation loss and leaky field mode deeply related with evanescent mode was theoretically derived. Depth, width, refractive index and cladding thickness of anti-resonant cladding were numerically calculated into 2.3${\mu}m$, 5${\mu}m$, 1.488, and 0.11${\mu}m$ respectively to minimize propagation loss using the BPM simulation tool. Finally one- and two-dimensional propagation characteristics of ARROW was confirmed.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.4
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• pp.561-568
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• 2017

In order to effectively utilize the Coarse Wavelength Division Multiplexing(CWDM) technology in optical integrated devices, a design of a wavelength selective coupler structure between an optical fiber and an optical waveguide in a flat substrate is can be considered. In this paper, we consider the coupling between a silicon waveguide with an air trench and a single mode fiber. We investigated the tendency of coupling efficiency and its limitations according to the grating depth. For this purpose, the coupling efficiency of coupler structure designed through modeling based on coupled mode theory is predicted and quantitatively compared with simulation results using finite element method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.48-53
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• 2006

This paper describes the electrical characteristics of monolithic optical transceiver circuitry being used in the fiber optic modules. It has been designed and fabricated, and compared with two chips version transceiver when operates at 155.52 Mbps data rates. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. To compare the two kind of fiber optic modules using each chip, single chip version has similar properties to two chip version in the electrical characteristics as noise and others.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.1-8
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• 2004

This paper describes the design of monolithic optical transceiver circuitry being used as a part of the fiber optic modules. It has been designed in 0.6 ${\mu}{\textrm}{m}$ 2-poly 3 metal silicon CMOS analog technology and operates at 155.52 Mbps(STM-1) data rates. It drives laser diode to transmit intensity modulated optical signal according to 155.52 Mbps electrical data from system. Also, it receives 155.52 Mbps optical data that transmitted from other systems and converts it to electrical data using photo diode and amplifier. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. The die area is 4 ${\times}$ 4 $\textrm{mm}^2$ and the estimated power dissipation is less than 900 ㎽ with a single 5 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.11-17
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• 2004

This paper describes the implementation of monolithic optical transceiver circuitry being used as a part of the fiber optic modules. It has been fabricated in 0.6 ${\mu}{\textrm}{m}$ 2-poly 3-metal silicon CMOS analog technology and operates at 155.52 Mbps(STM-1) data rates. It drives laser diode to transmit intensity modulated optical signal according to 155.52 Mbps electrical data from system. Also, it receives 155.52 Mbps optical data that transmitted from other systems and converts it to electrical data using photo diode and amplifier. To avoid noise and interference between transmitter and receiver on one chip, layout techniques such as special placement, power supply separation, guard ring, and protection wall were used in the design. The die area is 4 ${\times}$ 4 $\textrm{mm}^2$, and it has 32.3 ps rms and 335.9 ps peak to peak jitter on loopback testing. the measured power dissipation of whole chip is 1.15 W(230 mW) with a single 5 V supply.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.157-160
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• 2001

APF optical link용 receiver를 하나의 바이폴라 칩으로 실현하기 위하여 수신파장 영역에서 고속.고감도 특성을 갖는 바이폴라 집적용 Si photodiode를 에피 두게 6$\mu\textrm{m}$(epi06)와 12$\mu\textrm{m}$(epi12)로 제작하고 이의 전기.광학적 특성을 조사하였다. 제작된 소자의 전기.광학적 특성을 -5 V의 동작전압에서 측정한 결과, 6 $\mu\textrm{m}$ 에피두께의 경우 접합커패시턴스와 암전류가 각각 4.8 pF와 2.6 pA로 나타났으며, 광신호 전류와 감도특성은 670 nm의 중심파장을 갖는 3.15 ㎼의 입사광 전력 아래에서 각각 0.568 $\mu\textrm{A}$와 0.18 A/W로 나타났다. 에피층의 두께가 12 $\mu\textrm{m}$의 경우 접합커패시턴스와 암전류는 각각 9.8 pF와 171.3 pA로 나타났으며, 광신호 전류와 감도특성은 3.679$\mu\textrm{A}$와 1.17 A/W로 나타났다. 제작된 두 소자는 적색 파장(λ$_{p}$=670nm)부근에서 최대 spectral response(λ$_{p}$=600nm at epi06, λ$_{p}$=700nm at epi12)를 보이고 있다.이고 있다.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.11
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.