• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.126-132
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• 2009

We have studied physical properties of MnAs thin films grown by Molecular-Beam Epitaxy as well as their post-growth annealing effects. The samples grown at $600^{\circ}C$ show the preferred crystal orientation of type-B independent of substrate whereas type-A is observed for the samples grown at below $200^{\circ}C$. The sample grown at $600^{\circ}C$ on GaAs(001) substrate is magnetized to only one direction even on the easy axis of magnetization. The magnetic properties are vastly enhanced after post-growth annealing for both MnAs/Si(001) sample with no ferromagnetism and ferromagnetic MnAs/GaAs(001) grown at $200^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.222-232
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• 1995

자기저항이란 외부 자기장에 의해 재료의 전기저항이 변화되는 현상을 일컫는다. Au와 같은 비자성도체 및 반도체 재료의 경우 외부에서 자기장이 가해지면 전도 전자가 Lorentz 힘을 받아 궤적이 변하므로 저항이 변화한다. 이러한 저항 변화 를 정상 자기저항(Ordinary Magnetoresistance, OMR)이라 하며 일반적으로 상당히 작은 저항의 변화를 나타낸다. 강자성도체 재료에서는 정상 자기저항 효과 외에도 부가적인 효과가 생긴다. 이는 스핀-궤도 결합에 기인한 효과로써 자기 저항은 강자성체의 자화용이축, 외부자계와 잔류간의 각도에 의존하며 이방성 자기저항(Anisotropic Magnetoresistance, AMR)이라 한다. AMR 비(%)는 일반적 으로 다음과 같이 정의된다. 즉 ${\Delta}{\rho}_{AMR}/{\rho}_{ave}=(\rho_{\|}-\rho_{T})/{\rho}_{ave}$로 여기서 $\rho_{\|}$는 자기장의 방향이 전류의 방향과 같을 때의 비저항 이고 $\rho_{T}$는 서로 수직일 때이며 ${\rho}_{ave}=(\rho_{\|}-\rho_{T})/3$이다. 기존의 MR 센서나 자기재생헤드(magnetic read head)에 사용되는 퍼머로이계 합금의 AMR 비는 상온에서 약 2% 정도의 저항변화를 보인다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.68-72
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• 2005

본 논문에서는 $Bi_{3}Ti_{4}O_{12}$에 Nd를 치환했을 때 향상되는 강유전체 특성을 sol-gel 방법을 이용하여 분석하였다. 이를 위해 $10\;wt\%$의 $12\%$과량의 Bi가 첨가된 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$ sol-gel 용액을 제작하였다. BNT 박막은 $Pt/TiO_2/SiO_2/Si$ 기판 위에 스핀 코팅 방법을 이용하여 증착하였으며, 최종 증착된 박막의 조성은 Rutherford backscattering spectroscopy 분석을 이용하여 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$임을 확인하였다. 200 nm 두께의 BNT 박막은 XRD 분석을 통해 (117)방향에서 강한 피크가 나오며, (001) 방향에서 Nd 치환에 따른 효과로 억제된 피크가 나오는 것을 확인하였다. Pt/BNT/Pt 구조를 이용하여 잔류분극을 측정한 결과 7 V에서 $48\;{\mu}\;C/cm^2$ 이 나왔다. 이것은 다른 강유전체 물질인 PZT, SBT, BLT보다 월등히 큰 값이다.

• Journal of the Korean Magnetics Society
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• v.13 no.2
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• pp.64-69
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• 2003

Ba-ferrite thin films were prepared on Si substrate with ${\alpha}$-Fe$_2$O$_3$ underlayer by a pulsed laser deposition system and characterized by X-ray, SEM, Mossbauer spectroscopy and VSM. The appropriate conditions of pulsation in ${\alpha}$-Fe$_2$O$_3$ and Ba-ferrite were the oxygen pressure of 0.1 Torr at a substrate temperature of 400$^{\circ}C$. Ba-ferrite crystals had the forms of ellipsoidal or needle and the grains shaped the more lumps with increasing the film thickness. Mossbauer spectroscopy assured that the direction of atomic spin in Fe ion was not random but had the tendency of arrangement normal to the substrate. The coercive force and squareness of hysteresis were larger in normal than in plane to the substrate but, the magnetic saturation moment was contrary to them. The spin arrangement was strongly affected by ${\alpha}$-Fe$_2$O$_3$ underlayer and the high coercive force and squareness were influenced by this. The crystal structure was conformed to be a Magntoplumbite symmetry with the hexagonal unit cell and the lattice constant of a increased with increasing film thickness, while c decreased

• Journal of the Korean Chemical Society
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• v.25 no.6
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• pp.367-375
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• 1981

Single crystals of Potassium Sulfate ($K_2SO_4$) have been grown from the saturated solution by the evaporation method at the optimum conditions. Radiation damages in the crystal by ${\gamma}$-irradiation of about $12{\times}10^6$ Roentgen have given rise to paramagnetic centers or paramagnetic defects. Electron spin resonance (ESR) spectra of the centers are obtained with the X-band EPR spectrometer at room temperature. The ESR peaks of the paramagnetic species are found to be anisotropic but the peak of $SO_3-$ radical is an isotropic of Gaussian shape at g = 2.0036. A number of ESR spectra of the crystal for angular variation of the anisotropic peaks are recorded at various orientations of rotation about a, b and c crystallographic axes respectively. The g-values are calculated from the line position between anisotropic peaks and the isotropic one and then principal g-values and its direction cosines of the species are obtained by diagonalization of 9 matrix elements of the corresponding g-values. All the paramagnetic defects are identified by the characteristic principal g-values and its direction cosines.

• Journal of the Korean Magnetics Society
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• v.22 no.6
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• pp.204-209
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• 2012

We measure the ferromagnetic resonance signals in order to analyze the exchange coupling energy due to the uncompensated antiferromagnetic spins in exchange coupled CoFe/MnIr bilayers. The exchange bias fields ($H_{ex}$) and rotatable anisotropy fields ($H_{ra}$) are obtained from the ferromagnetic resonance fields measured with in-plane angle in thermal annealed samples with $t_{AF}$= 0, 3, and 10 nm. The sum of the $H_{ex}$ and $H_{ra}$ do not depend on the MnIr thickness, which means that all the uncompensated AF spins are aligned to one direction in $300^{\circ}C$ annealed samples. Therefore, the uncompensated AF spins are divided into two different parts. One parts are fixed at the interface between CoFe/MnIr bilayers and induces the $H_{ex}$, other parts are rotatable with magnetic field and induces the $H_{ra}$. Finally, the exchange coupling energy can be expressed by the sum of the exchange bias energy and rotatable anisotropy energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.279-279
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• 2007

비휘발성 메모리 Fe-RAM은 빠른 정보처리 속도와 전원공급이 차단되었을 때도 계속 정보를 유지할 수 있는 비휘발성 특징과 더불어 저전압, 저전력 구동의 장점이 있어서, 차세대 메모리로 많은 주목을 받고 있다. FeRAM에 사용되는 강유전체는 주로 Pb(Zr,Ti)$O_3$가 적용되었는데, 최근에는 비납계 강유전체의 연구도 활발히 이루어지고 있다. 이러한 비납계 강유전체 중에서 가장 특성이 우수한 물질은 $(Bi,La)_4Ti_3O_{12}$ (BLT) 이다. 그런데 BLT는 결정 방향에 따른 강한 이방성의 강유전 특성을 나타내기 때문에 BLT 박막을 이용하여 Fe-RAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 지금까지 연구된 BLT 박막의 방향성 조절결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 증착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법(sputtering deposition method), PLD (pulsed laser deposition)법 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요가 없게 된다. PVD 증착법의 적용을 위해서는 타겟의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표가 되지 않고 있다. 본 실험에서는 $Bi_2O_3,\;TiO_2,\;La_2O_3,\;Nb_2O_5\;and\;Al_2O_3$ 분말들을 이용하여 최적의 조성을 구하기 위하여 $Nb^{+5}$ 와 $Al^{+3}$을 $Ti^{+4}$ 자리에 소량 치환시켜 제조하였다. 혼합된 분말을 하소 후 pellet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 양면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. 측정결과 $Ti^{+4}$ 자리에 $Nb^{+5}$를 치환하여 제조한 시편에서 $2P_r{\sim}31\;{\mu}c/cm^2$정도의 매우 우수한 특성을 얻었다.

• Journal of the Korean Magnetics Society
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• v.19 no.2
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• pp.52-56
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• 2009

Interlayer coupling field, coercivity, magnetoresitance ratio, and magnetic sensitivity depending on the thickness of free CoFe layer for the CoFe/Cu/CoFe/IrMn multilayer are investigated. In case of CoFe layer of $30\;{\AA}$ thickness for the CoFe(t)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)/IrMn($80\;{\AA}$) multilayer with ferromagnet/non-magnet/ferromagnet structure induced by IrMn layer, the lowest coercivity and the highest magnetic sensitivity, which is contained soft magnetic property, are observed. On the other side, in case of CoFe layer of $90\;{\AA}$ thickness, there are the highest coercivity and the lowest magnetic sensitivity. The fabricated CoFe($30\;{\AA}$)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)]/IrMn($80\;{\AA}$) spin valve device with $2{\times}8{\mu}m^2$ patterning size are measured by two probe method, which is selected the sensing current as the longitudinal direction and the easy axis as the transversal direction. The measuring magntoresistance ratio and magnetic sensitivity of GMR-SV device having the soft magnetic property are 3.0% and 0.3%/Oe, respectively.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.188-193
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• 2007

We simulated the magnetization reversal behavior of submicron-thickness magnetic films by applying pulses of sub-ns-long durations and amplitudes along the easy axis. The films were rectangular and elliptical $Ni_{80}Fe_{20}$, and their thickness was 2 nm and 4 nm. We observed different behaviors depending upon the shape and thickness of the films and found a normal non-switching in regions in which we expected complete switching after relaxation. In the elliptical film, the non-switching regions were found to be random and to be widely distributed throughout the switching map. The strong demagnetization field along the z-axis, the film thickness direction, is likely responsible for this abnormal behavior. In the rectangular film, the abnormal non-switching regions were less distributed than they were in the elliptical film due to edge domains resulting from the small $M_z$ or demagnetization field during the switching. Our simulation confirms that large demagnetization is detrimental to the ultra-fast magnetization reversal of magnetic ultra-thin films.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.193-199
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• 2013

The regional distribution of magnetic isotropy depending on the post annealing condition for the dual-type structure GMR-SV (giant magnetoresistance-spin valve) of NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multilayer was investigated. The rotation of in-plane ferromagnetic layer induced by controlment of the post annealing temperature inside of the vacuum chamber. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetization easy axis of the free layer and the pinned layer are measured by between $0^{\circ}$ and $360^{\circ}$ angles for the applied fields. The optimum annealing temperature having a steady and isotropy magnetic sensitivity of 1.52 %/Oe was $107^{\circ}C$ in the rotational section of $0{\sim}90^{\circ}$. By investigating the switching process of magnetization for an arbitrary measuring direction, the in-plane orthogonal magnetization for the dual-type GMR-SV multilayer can be used by a high sensitive biosensor for detection of magnetized micro-beads.