• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.6
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• pp.500-504
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• 2001

The present approach based on the genetic algorithm with improved selections of bonds was adopted to extract a bridged T equivalent circuit elements of $\times10\mu m^2$InGaP/GaAs HBT. the small-signal model parameters were extracted using the genetic algorithm from S-parameters measured at different frequencies under multiple forward-active biases, which demonstrate physically meaningful values and consistency. The agreement between the measured and modeled S-parameters is excellent over the frequency range of 2 to 26.5GHz.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.46-49
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• 2004

레이저 다이오드 (LD)의 광 직접 변조시 광자와 전자의 동역학에 의하여 입출력 관계가 결정된다. 이는 LD의 직접 변조 시 대역폭을 제한하는 요소로 작용한다. 높은 대역폭을 가지는 광송신기 설계를 위하여 LD의 등가회로 분석은 필수적이다. LD의 등가회로는 E/O response를 이용하여 소신호 분석을 통해 얻을 수 있으며, E/O response는 rate equation을 이용하여, 구할 수 있다. LD의 등가회로는 직렬 저항값, 기생 커패시턴스, 외부 회로와의 연결을 위한 와이어에 기인하는 인덕턴스 성분 등으로 구성된다. 본 논문에서는, rate equation을 사용하여 계산된 결과를 이용하여, LD의 등가회로를 도출하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.12
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• pp.7287-7291
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• 2014

A CDTA (current differencing transconductance amplifier) is an active building block for current mode analog signal processing with the advantages of high linearity and a wide frequency bandwidth. In addition, it can generate a stable voltage because all the differencing input current flows to the grounded devices. In this paper, a new small signal equivalent circuit is proposed to analyze a CDTA. The proposed small signal equivalent circuit provides greater precision in analyzing the magnitude and frequency response than its previous counterparts because it considers the parasitic components of the input, internal and output terminal. In addition, observations of the changes made in various devices, such as the resistor (Rz) confirmed that those devices heavily influence the characteristics of CDTA. The designed parameters of the proposed small signal equivalent circuit of the CDTA provides convenience and accuracy in the further design of analog integrated circuits. For verification purposes, a 2.5 MHz low pass filter was designed on the HSPICE simulation program using the proposed small signal equivalent circuit of CDTA.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.10
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• pp.1910-1915
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• 2007

An accurate and simple method to extract equivalent circuit parameters of fully-depleted silicon-on-insulator MOSFETs small-signal modeling operating at RF frequencies including the non-quasi static effects is presented in this article. The advantage of this method is that a unique and physically meaningful set of intrinsic equivalent circuit parameters is extracted by de-embedding procedure of extrinsic elements such as parasitic capacitances and resistances of MOSFETs from measured S-parameters using simple Z- and Y- matrices calculations. The calculated small-signal parameters using the presented extraction method give modeled Y-parameters which are in good agreement with the measured Y-parameters from 0.5 to 20GHz.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.357-360
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• 2000

This paper describes a parameter extraction method for HBT(Heterojunction Bipolar Transistor) equivalent circuit model without measurements of special test structures or numerical optimizations. Instead, all equivalent circuit parameters are calculated analytically from small-signal S-parameters measured under different bias conditions. These values being extracted from the cutoff mode can be used to extract intrinsic parameters at the active mode. This method yields a deviation of about 1.3 % between the measured and modeled S-parameters.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4C
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• pp.371-379
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• 2002

In this paper, the MMIC SPST switches operating from DC to 3GHz were designed and implemented. Prior to the design of switches, the small and large-signal switch models were needed to predict switch performance accurately. The newly proposed small-signal switch model parameters were extracted from measured S-parameters using optimization technique with estimated initial values and boundary limits. In the extraction of large-signal switch model parameters, the current source was modeled by fitting empirical equations to measured DC data and the charge model was derived from extracted channel capacitances from measured S-parameters varying the drain-source voltage. To design basic series-shunt SPST switches and isolation-improved SPST switches, we applied this model to commercial microwave circuit simulator. The improved SPST switches exhibited 0.302dB insertion loss, 35.762dB isolation, 1.249 input VSWR, 1.254 output VSWR, and about 15.7dBm PldB with 0/-3V control voltages at 3GHz.

• Proceedings of the KIPE Conference
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• 2019.11a
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• pp.112-113
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• 2019

본 논문은 양극성 저압 직류배전망 구성을 위한 커플드 인덕터를 활용한 인터리브드 전압 밸런서의 소신호 분석 및 제어기 설계를 제안한다. 커플드 인덕터를 활용한 인터리브드 구조의 전압 밸런서는 출력 캐패시턴스 및 전체 인덕턴스를 줄일 수 있는 이점 있으나, 결합계수 및 인터리브드 입력으로 인한 회로 분석의 어려움이 존재한다. 본 논문은 이를 해결하기 위해 커플드 인덕터 등가회로를 통한 인덕턴스 결합 분석 및 제어 입력의 평균 계산법을 적용하여 소신호 모델링을 진행하고 제어기를 설계하였으며 이를 PSIM 시뮬레이션을 통해 검증하였다.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.8
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• pp.853-859
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• 2014

This study presents a technique for extracting all the extrinsic parameters of HEMTs by minimizing the residual errors between a pinch-off cold-FET's gate and drain pad de-embedded Z-parameters and its modeled Z-parameters calculated by the cold-FET's remaining parameters. The presented technique allows us to successfully extract the remaining extrinsic parameter values as well as the gate and drain pad capacitance value without the additional fabrications of the gate and drain dummy pad.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.21-26
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• 2004

In this paper, a direct method is developed to extact RF equivalent circuit of a packaged BJT without optimization. First, parasitic components of plastic package are removed from measured S-parameters using open and short package patterns. Using package do-embedded S-parameters, a direct and simple method is proposed to extract bonding wire inductance and chip pad capacitance between package lead and chip pad. The small-signal model parameters of internal BJT are next determined by Z and Y-parameter formula derived from RF equivalent circuit. The modeled S-parameters of packaged BJT agree well with measured ones, verifying the accuracy of this new extraction method.