• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.193-202
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• 1999

Al powder, AlN powder, SiC whisker and sintering aids were wet-mixed, and then the specimens prepared with mixed powder were reacted by nitridation at 600∼1400$^{\circ}C$ for 5 hrs. It was cleat that the higher nitridation and the more SiC whisker content were, the better bending strength was. The specimen of Al50/AlN50 reacted at 1400$^{\circ}C$ for 5hrs had the nitridation percent of 97%, the shrinkage under 2%, and the relative density of 78%. And the maximum bending strength of reaction-bonded specimen was 250 MPa. The specimens completely nitrided were post-sintered at 1700, 1800 and 1900$^{\circ}C$ for 2hrs. The post-sintered body had the shrinkage under 6% and the relative density of 86%. Because of the formation of solid solution between AlN and SiC whisker over 1800$^{\circ}C$, the promotion of mechanical properties according to SiC whisker addition was not observed. The post-sintered body had the maximum bending strength of 195 MPa.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.159-163
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• 2002

A single phase perovskite relaxor ferroelectric PMN-PT-BT was prepared by a single calcination and the modified mixed oxide process. It was accomplished by ball-milling PbO, $Nb_2O_5,\;Ti(OC_3H_7)_4,\;BaCO_3,\;and\;Mg(NO_3)_2$ instead of MgO, removing the solvent, and then followed by calcination at 900$^{\circ}C$ for 2h. The specimen sintered at 1100$^{\circ}C$/2h showed the sintered density of 7.83 g/$cm^3$, room temperature dielectric constant of 22000, and dielectric loss of 2.5%. Addition of 1.0 mole% (0.3 wt%) of Ag as $AgNO_3$ and followed by calcination at 550$^{\circ}C$/2h lowered the sintering temperature to 900$^{\circ}C$. It still showed the sintered density of 7.88 g/$cm^3$, room temperature dielectric constant of 20000 and dielectric loss of 2.4%.

• Resources Recycling
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• v.18 no.2
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• pp.69-76
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• 2009

Alumina powder was prepared from heat-treatment of artificial marble waste fine aggregate containing $Al(OH)_3$ for the purpose of the feasibility of its recycling. Artificial marble waste was heat-treated between $500^{\circ}C$ and $1000^{\circ}C$ and XRD, BET surface area, BJH pore size distribution and adsorption of As were analyzed for heat-treated powder. It was found that the adsorption efficiency of As was significantly affected by phase composition of alumina powder rather than its physical characteristic. Heat-treated powder compact was sintered to produce the pellet. Alumina pellet with porosity more than 60% could be obtained after sintering below $1200^{\circ}C$ and also the addition of glass powder as a sintering aid had a positive effect on lowering sintering temperature, led to the high porosity near 60% and adsorption of As over 60% even at $900^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1320-1325
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• 2004

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PCW-PMN-PZT ceramics added with Li$_2$CO$_3$, Bi$_2$O$_3$ and CuO as sintering aids were manufactured, and their microstructural, dielectric and piezoelectric properties were investigated. When the only CuO was added, specimens could not be sintered below 98$0^{\circ}C$. However, when Li$_2$CO$_3$ and Bi$_2$O$_3$ were added, specimens could be sintered below 98$0^{\circ}C$. Li$_2$CO$_3$ and Bi$_2$O$_3$ addition were proved to lower sintering temperature of piezoelectric ceramics due to the effect of Li$_2$O-Bi$_2$O$_3$ liquid phase. Li$_2$CO$_3$ and Bi$_2$O$_3$ added specimens showed higher piezoelectric properties than those of the only CuO added specimens. At 0.2 wt% Li$_2$CO$_3$ and 0.3 wt% Bi$_2$O$_3$ added specimen sintered at 92$0^{\circ}C$, the dielectric constant of 1457, electromechanical coupling factor of 0.56 and mechanical quality factor of 1000 were shown, respectively. These values are suitable for multilayer piezoelectric transformer application.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.392-396
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• 2009

AlON was fabricated by the pressureless reaction sintering of $Al_2O_3$-AlN powder mixtures. The ratio of AlN to $Al_2O_3$ as well as various sintering aids were the main variables for this study. The optimum ratio of AlN in the $Al_2O_3$-AlN mixture was approximately 35.0 mol%. For the sintering aids, only when a small amount of MgO was added together with $Y_2O_3$ and BN, AlON specimens could be sintered to a full density with negligible pores and high transparency. Other combinations of $Y_2O_3$, BN, CaO and MgO resulted in enough pores in the sintered specimens to have in-line transmittance only between 0% and 30%. The in-line transmittance reached over 80% after sintering at $1975^{\circ}C$ for 10 h for the specimen containing 0.15 wt% MgO, 0.08 wt% $Y_2O_3$ and 0.02 wt% BN.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.126-130
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• 2008

In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.21-25
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• 2000

Gas pressure sintered silicon nitride based composites with 5 wt% $\beta$-Si3N4 whiskers were prepared, and the variations depending on sintering additives and sintering temperature were studied. Sintering additives were 6 wt% Y2O3-1 wt% MgO(6Y1M), 6 wt%Y2O3-1 wt% Al2O3(6Y1A), 6 wt% Y2O3-1 wt% SiO2(6Y1S), and whiskers were unidirectionally oriented by a modified tape casting technique. Samples were fully densified by gas pressure sintering at 2148 K and 2273 K. As the sintering temperature increased, the size of large elongated grains was increased. Three point flexural strength of 6Y1M and 6Y1M samples was higher than that of 6Y1S sample, and the strength decreased as the sintering temperature increased. The indentation crack length became shorter for the sample sintered at higher temperature, and the difference between the cracks length parallel to and normal to the direction of whisker alignment was decreased. In case of cracks 45$^{\circ}$off the whisker alignment direction, the crack length anisotropy disappeared.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.384-389
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• 2011

Gas pressure sintering (GPS) of reaction bonded silicon nitride (RBSN) was performed using $Lu_2O_3-SiO_2$ additive and the properties were compared with those of specimens prepared using high purity $Si_3N_4$ powder. The relative density of RBSN and compacted $Si_3N_4$ powder were 68.9 and 47.1%, and total linear shrinkage after sintering at $1900^{\circ}C$ were 14.8 and 42.9%, respectively. High nitrogen partial pressure (5MPa) was required during sintering at $1900^{\circ}C$ in order to prevent the decomposition of the nitride and to promote the formation of SiC. The relative density and 4-point bending strength of RBSN and $Si_3N_4$ powder compact were 97.7%, 954MPa and 98.2%, 792MPa, respectively, after sintering at $1900^{\circ}C$. The sintered RBSN also showed high fracture toughness of 9.2MPam$^{1/2}$.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.114-115
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• 2007

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_3$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of $H_3BO_3$ addition, the bulk density and dielectric constant were decreased but quality factor was increased with amount of $H_3BO_3$ additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3+xwt%H_3BO_3$ ceramics were moved to positive direction. In another case, SnO addition, the bulk density and dielectric constant were increased but Quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+ywt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with $2wt%H_3BO_3$ and 2.5wt%SnO sintered at $830^{\circ}C$ for 1h, were 28.5, 39,570GHz, $+9.34ppm/^{\circ}C$ and 29.86, 35,80000z, $-0.58ppm/^{\circ}C$, respectively.