• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.45-47
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• 2002

반도체 소자의 고집적화 및 고속화가 요구됨에 따라 MOSFET 구조의 게이트 절연막으로 사용되고 있는 SiO₂ 박막의 두께를 감소시키려는 노력이 이루어지고 있다. 0.1㎛ 이하의 소자를 위해서는 15Å 이하의 두께를 갖는 SiO₂가 요구된다. 하지만 두께감소는 절연체의 두께와 지수적인 관계가 있는 누설전류를 증가시킨다[1-3]. 따라서 같은 게이트 개패시턴스를 유지하면서 누설전류를 감소시키기 위해서는 높은 유전상수를 갖는 두꺼운 박막이 요구되는 것이다. 그러므로 약 25정도의 높은 유전상수를 갖고 5.2～7.8 eV 정도의 비교적 높은 bandgap을 갖으며, 실리콘과 열역학적으로 안정한 물질로 알려진 HfO2[4-5]가 최근 큰 관심을 끌고 있다. 본 연구에서는 HfO₂ 박막을 실제 소자에 적용하기 위하여 전극 및 열처리에 따른 HfO₂ 박막의 미세구조 및 전기적 특성에 관한 연구를 수행하였다. 이를 위해, HfO₂ 박막을 reactive DC magnetron sputtering 방법으로 증착하고, XRD, TEM, XPS를 사용하여 ZrO₂ 박막의 미세구조를 관찰하였으며, MOS 캐패시터 구조의 C-V 및 I-V 특성을 측정하여 HfO₂ 박막의 전기적 특성을 관찰하였다. HfO₂ 타겟을 스퍼터링하면 Ar 스퍼터링에 의해 에너지를 가진 산소가 기판에 스퍼터링되어 Si 기판과 반응하기 때문에 HfO₂ 박막 형성과 더불어 Si 기판이 산화된다[6]. 그래서 HfO₂같은 금속 산화물 타겟 대신에 순수 금속인 Hf 타겟을 사용하고 반응성 기체로 O₂를 유입시켜 타겟이나 시편위에서 high-k 산화물을 만들면 SiO/sub X/ 계면층을 제어할 수 있다. 이때 저유전율을 갖는 계면층은 증착과 열처리 과정에서 형성되고 특히 500℃ 이상에서 high-k/Si를 열처리하면 계면 SiO₂층은 증가하는 데, 이것은 산소가 HfO₂의 high-k 박막층을 뚫고 확산하여 Si 기판을 급속히 산화시키기 때문이다. 본 방법은 증착에 앞서 Si 표면을 희석된 HF를 이용해 자연 산화막과 오염원을 제거한 후 Hf 금속층과 HfO₂ 박막을 직류 스퍼터링으로 증착하였다. 우선 Hf 긍속층이 Ar 가스 만의 분위기에서 증착되고 난 후 공기중에 노출되지 않고 연속으로 Ar/O₂ 가스 혼합 분위기에서 반응 스퍼터링 방법으로 HfO₂를 형성하였다. 일반적으로 Si 기판의 표면 위에 자연적으로 생기는 비정질 자연 산화막의 두께는 10～15Å이다. 그러나 Hf을 증착한 후 단면 TEM으로 HfO₂/Si 계면을 관찰하면 자연 산화막이 Hf 환원으로 제거되기 때문에 비정질 SiO₂ 층은 관찰되지 않았다. 본 실험에서는 HfO2의 두께를 고정하고 Hf층의 두께를 변수로 한 게이트 stack의 물리적 특성을 살펴보았다. 선증착되는 Hf 금속층을 0, 10, 25Å의 두께 (TEM 기준으로 한 실제 물리적 두께) 로 증착시키고 미세구조를 관찰하였다. Fig. 1(a)에서 볼 수 있듯이 Hf 금속층의 두께가 0Å일때 13Å의 HfO₂를 반응성 스퍼터링 방법으로 증착하면 HfO₂와 Si 기판 사이에는 25Å의 계면층이 생기며, 이것은 Ar/O₂의 혼합 분위기에서의 스퍼터링으로 인한 Si-rich 산화막 또는 SiO₂ 박막일 것이다. Hf 금속층의 두께를 증가시키면 계면층의 성장은 억제되는데 25Å의 Hf 금속을 증착시키면 HfO₂ 계면층은 10Å미만으로 관찰된다. 그러므로 Hf 금속층이 충분히 얇으면 플라즈마내 산소 라디칼, 이온, 그리고 분자가 HfO₂ 층을 뚫고 Si 기판으로 확산되어 SiO₂의 계면층을 성장시키고 Hf 금속층이 두꺼우면 SiO/sub X/ 계면층을 환원시키면서 Si 기판으로의 산소의 확산은 막기 때문에 계면층의 성장은 억제된다. 따라서 HfO₂/Hf(Variable)/Si 계에서 HfO₂ 박막이 Si 기판위에 직접 증착되면, 순수 HfO₂ 박막의 두께보다 높은 CET값을 보이고 Hf 금속층의 두께를 증가시키면 CET는 급격하게 감소한다. 그러므로 HfO₂/Hf 박막의 유효 유전율은 단순 반응성 스퍼터링에 의해 형성된 HfO₂ 박막의 유전율보다 크다. Fig. 2에서 볼 수 있듯이 Hf 금속층이 너무 얇으면 계면층의 두께가 두꺼워 지고 Hf 금속층이 두꺼우면 HfO₂층의 물리적 두께가 두꺼워지므로 CET나 EOT 곡선은 U자 형태를 그린다. Fig. 3에서 Hf 10초 (THf=25Å) 에서 정전 용량이 최대가 되고 CET가 20Å 이상일 때는 high-k 두께를 제어해야 하지만 20Å 미만의 두께를 유지하려면 계면층의 두께를 제어해야 한다.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Tuberculosis and Respiratory Diseases
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• v.50 no.1
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• pp.67-75
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• 2001

Background : Two tumor suppressor genes, p53 and p16, which have different roles in controlling the cell cycle and inducing apoptosis, are frequently inactivated during carcinogenesis including lung cancer. Single tumor suppressor gene therapies using either with p53 or p16 have been studied extensively. However, there is a paucity of reports regarding a combined gene therapy using these two genes. Methods : The combined effect of p53 and p16 gene transfer by the adenoviral vector on the growth of lung cancer cell lines and its interactive mechanism was investigated. Results : An isobologram showed that the co-transduction of p53 and p16 exhibited a synergistic growth in hibitory effect on NCI H358 and an additive effect on NCI H23. Cell cycle analysis demonstrated the induction of a synergistic G1/S arrest by a combined p53 and p16 transfer. This synergistic interaction was again confirmed in a soft agar confirmed in a soft agar clonogenic assay. Conclusion : These observations suggest the potential of a p53 and p16 combination gene therapy as another potent strategy in cancer gene therapy.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Journal of Korean Society of Forest Science
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• v.79 no.4
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• pp.388-397
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• 1990

This study was conducted to investigate the changes of land use and stand volume around Mt. Kuem-O by B/W aerial photographs in 1979 and B/W Infrared aerial photographs in 1988. The results obtained in this study were as follow : 1. In classification of forest type on aerial photographs, coniferous stand was dark tone and hardwood stand was light tone and irregularly rounded crowns. 2. In classification of coniferous stand, Pinus densiflora was narraw cone and rounded tip of crowns and rough texture, Pinus rigida was irregulary rounded and broadly conical crowns. 3. To refer to changes of forest land area, mixed forest was changed into P. desiflora (687ha), P. rigida (130ha) and hardwood stand (219ha). 4. The regression equations between crown diameter and DBH were significant at 1% level by F-test in all stands. So the equation, D=a+bCD was used to estimate DBH. 5. The tree height curve equations were significant at 1% level by F-test in all stands. To estimate tree height the equation, logH=loga+blogD was adopted in P. densiflora and L. leptolepis and $H=a-bD+cD^2$ was adopted in P. rigida, hardwood stand and mixed forest. 6. The highest volume per hectare was observed in L. leptolepis and mixed forest showed the greatest growth percentage, while the lowest volume per hectare and growth percentage were observed in hardwood stand.

• The Korean Journal of Petroleum Geology
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• v.5 no.1_2 s.6
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• pp.9-15
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• 1997

The study area is located in the Central Bransfield Basin, Antarctica. To analyze the morphology of seafloor, structure of basement, and seismic stratigraphy of the sedimentary layers, we have acquired, processed, and interpreted the multi-channel seismic data. The northwest-southeastern back-arc extension dramatically changes seafloor morphology, volcanic and fault distribution, and basin structure along the spreading ridges. The northern continental shelf shows a narrow, steep topography. In contrast, the continental shelf or slope in the south, which is connected to the Antarctic Peninsula, has a gentle gradient. Volcanic activities resulted in the formation of large volcanos and basement highs near the spreading center, and small-scale volcanic diapirs on the shelf. A very long, continuous normal fault characterizes the northern shelf, whereas several basinward synthetic faults probably detach into the master fault in the south. Four transfer faults, the northwest-southeastern deep-parallel structures, controlled the complex distributions of the volcanos, normal faults, depocenters, and possibly hydrocarbon provinces in the study area. They have also deformed the basement structure and depositional pattern. Even though the Bransfield Basin was believed to be formed in the Late Cenozoic (about 4 Ma), the hydrocarbon potential may be very high due to thick sediment accumulation, high organic contents, high heat flow resulted from the active tectonics, and adequate traps.

• The Korean Journal of Petroleum Geology
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• v.5 no.1_2 s.6
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• pp.1-8
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• 1997

Seismic stratigraphic analysis of the high resolution profiles obtained from the southeastern shelf of Korea divided the deposits into 4 sequences; 1) sequence D, 2) sequence C, 3) sequence B and 4) sequence A (Holocene sediments). Sequence D was deposited in shallow-water environment at west of the Yangsan Fault as the basin subsided. On the other hand, the eastern part was formed at the slope front. Landward part of the slope-front fill sediments were eroded and redeposited nearby slope due to the syndepositional tilting of the basin. This tilting probably resulted from the continuous closing of the Ulleung Basin. Sequence C is made of stacked successions of the lowstand fluvial sediments, transgressive sediments and marine highstand sediments derived from the paleo-river in the western part of the Yangsan Fault. Sequence C in the eastern part of the Yanshan Fault was formed at the shelf break. Progradation of the lowstand sediments resulted in broadening of the shelf. Sequence C in the eastern part was also tilted but the tilting was weaker than in Sequence D. During the formation of sequence B the tilting stopped and the point source instead of the line source started in both sides of the Yangsan Fault. Sequence B was composed of the highstand systems tract partially preserved around the Yokji island, lowstand systems tract mainly preserved in the Korea Trough and transgressive systems tract. After the stop of the tilting, the force of compression due to the closing of the Ulleung Basin may be released by the strike-slip faults instead of tilting.

• The Korean Journal of Nuclear Medicine
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• v.34 no.1
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• pp.55-61
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• 2000

Purpose: We performed this study to evaluate the changes of gallbladder ejection fraction (GBEF) in diabetic patients with or without autonomic neuropathy. Materials and Methods: This study included 37 diabetic patients (25 women, 12 men, mean age 51 years) and 24 normal controls (10 women, 14 men, mean age 38 years). After intravenous injection of 185 MBq of $^{99m}Tc$-DISIDA, serial anterior abdominal images were acquired before and after fatty meal. Regions of interest were applied on gallbladder and right hepatic lobe on 60 and 90 minute images to calculate GBEF. Results: GBEF was significantly reduced in diabetes with autonomic neuropathy ($43{\pm}12.3%$) and without autonomic neuropathy ($57.5{\pm}13.2%$) compared with normal controls ($68{\pm}11.6%$, p<0.05). And also, GBEF was significantly reduced in diabetes with autonomic neuropathy compared with diabetes without autonomic neuropathy (p<0.05). Fasting blood glucose level, age, sex, hemoglobin Alc, body mass index, serum lipid level were not different in these two diabetic patient groups (p>0.05). When 50.2% of GBEF was used as the criteria for diabetic autonomic neuropathy, the sensitivity and specificity were 80%, 76.5%, respectively. The area under receiver operating characteristic curve was 0.846. Conclusion: GBEF of diabetic patients with autonomic neuropathy was significantly reduced than that of diabetic patients without autonomic neuropathy.

• The Korean Journal of Petroleum Geology
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• v.4 no.1_2 s.5
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• pp.27-39
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• 1996

In the Cretaceous, the Gulf Coast Basin evolved as a marginal sag basin. Thick clastic and carbonate sequences cover the disturbed and diapirically deformed salt layer. In the Cretaceous the salinities of the Gulf Coast Basin probably matched the Holocene Persian Gulf, as is evidenced by the widespread development of supratidal anhydrite. The major Lower Cretaceous reservoir formations are the Cotton Valley, Hosston, Travis Peak siliciclastics, and Sligo, Trinity (Pine Island, Pearsall, Glen Rose), Edwards, Georgetown/Buda carbonates. Source rocks are down-dip offshore marine shales and marls, and seals are either up-dip shales, dense limestones, or evaporites. During this period, the entire Gulf Basin was a shallow sea which to the end of Cretaceous had been rimmed to the southwest by shallow marine carbonates while fine-grained terrigengus clastics were deposited on the northern and western margins of the basin. The main Upper Cretaceous reservoir groups of the Gulf Coast, which were deposited in the period of a major sea level .rise with the resulting deep water conditions, are Woodbinefruscaloosa sands, Austin chalk and carbonates, Taylor and Navarro sandstones. Source rocks are down-dip offshore shales and seals are up-dip shales. Major trap types of the Lower and Upper Cretaceous include salt-related anticlines from low relief pillows to complex salt diapirs. Growth fault structures with rollover anticlines on downthrown fault blocks are significant Gulf Coast traps. Permeability barriers, up-dip pinch-out sand bodies, and unconformity truncations also play a key role in oil exploration from the Cretaceous Gulf Coast reservoirs. The sedimentary sequences of the major Cretaceous reseuoir rocks are a good match to the regressional phases on the global sea level cuwe, suggesting that the Cretaceous Gulf Coast sedimentary stratigraphy relatively well reflects a response to eustatic sea level change throughout its history. Thus, of the three main factors controlling sedimentation (tectonic subsidence, sediment input, and eustatic sea level change) in the Gulf Coast Basin, sea-level ranks first in the period.

• The Journal of the Petrological Society of Korea
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• v.20 no.1
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• pp.23-37
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• 2011

The scaling properties on the length distribution of microcrack populations from Tertiary crystalline tuff are investigated. From the distribution charts showing length range with 15 directional angles and five groups(I~V), a systematic variation appears in the mean length with microcrack orientation. The distribution charts are distinguished by the bilaterally symmetrical pattern to nearly N-S direction. The whole domain of the length-cumulative frequency diagram for microcrack populations can be divided into three sections in terms of phases of the distribution of related curves. Especially, the linear middle section of each diagram of five groups represents a power-law distribution. The frequency ratio of linear middle sections of five groups ranges from 46.6% to 67.8%. Meanwhile, the slope of linear middle section of each group shows the order: group V($N60{\sim}90^{\circ}E$, -2.02) > group IV($N20{\sim}60^{\circ}E$, -1.55) > group I($N60{\sim}90^{\circ}W$, -1.48), group II($N10{\sim}60^{\circ}W$, -1.48) > group III($N10^{\circ}W{\sim}N20^{\circ}E$, -1.06). Five sub-populations(five groups) that closely follow the power-law length distribution show a wide range in exponents( -1.06 - -2.02). These differences in exponent among live groups emphasizes the importance of orientation effect. In addition, breaks in slope in the lower parts of the related curves represent the abrupt development of longer lengths, which is reflected in the decrease in the power-law exponent. Especially, such a distribution pattern can be seen from the diagram with $N10{\sim}20^{\circ}E,\;N10{\sim}20^{\circ}W$ and $N60{\sim}70^{\circ}W$ directional angles. These three directional angles correspond with main directions of faults developed around the study area. The distribution chart showing the individual characteristics of the length-cumulative frequency diagrams for 15 directional angles were made. By arraying above diagrams according to the categories of three groups(A, B and C), the differences in length-frequency distributions among these groups can be easily derived. The distribution chart illustrates the importance of analysing microcrack sets separately. From the related chart, the occurrence frequency of shorter microcracks shows the order: group A > group B > group C. These three types of distribution patterns could reveal important information on the processes occurred during microcrack growth.