• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.197-206
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• 1999

The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Korean journal of food and cookery science
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• v.26 no.3
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• pp.335-345
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• 2010

The objective of this study was to model the kinetics of S. aureus survival on high risk foods in school foodservice operations. After inoculating S. aureus ATCC25923 onto the various high risk foods, the effects of competitive microorganism, storage temperatures($25^{\circ}C$, $35^{\circ}C$), and initial contamination levels ($1.0{\times}10^2\;CFU/g$, $1.0{\times}10^5\;CFU/g$) on the growth of S. aureus were investigated. Lag time decreased and specific growth rate increased with a storage temperature ($25^{\circ}C$<$35^{\circ}C$) and with a higher initial inoculation level ($1.0{\times}10^2\;CFU/g$<$1.0{\times}10^5\;CFU/g$). Previously it was shown that S. aureus is a weaker competitor than other organisms, but it proliferates aggressively in a noncompetitive environment. However, in our study, when S. aureus was used to inoculate japchae (glass noodles with sauteed vegetables) and meat ball, the growth of S. aureus was similar and more active with competitive organisms than that without competitive organisms. Regardless of other factors, the initial level of S. aureus was a more significant factor of the growth. High inoculation levels of S. aureus were reached at 6 log CFU/g within 3 hours. An incubation temperature of $35^{\circ}C$ and the animal protein component of menu items also were identified as significant factors influencing the growth of S. aureus. Therefore, the duration of time meals are stored before serving should be considered a critical control point. Food service providers must control time and temperature to insure the safety of cooked foods.

• Parasites, Hosts and Diseases
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• v.28 no.1
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• pp.53-62
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• 1990

The growth and developmental pattern of H. continua was observed after experimental infection of their metacercariae to chicks. The recovery rate of worms from the chicks at 1 to 28 days post-infection(PI) was 12.8% in average. The rate remained fairly high for early 4 days of infection but decreased thereafter rapidly till 28 days PI. Most of the nukes, 91.9%, were recovered from the ileum of the chicks. In metacercariae, genital organs such as the ovary, testes, seminal vesicle, seminal receptacle and genital sucker were recognizable. At one day PI Mehlis'gland appeared, and at 2 days follicular vitellaria were observed. At 3 days PI, eggs were formed in the uterine tubule and increased in number as the worm grew old. The worms reached $2,990{\;}{\mu\textrm{m}}$ in length and $525{\;}{\mu\textrm{m}}$ in width at 28 days PI. Genital organs developed rapidly in early stages of infection but slowly thereafter to 28 days Pl, whereas non-genital organs developed steadily through the infection period. It was proved by this experiment that chicks should be a moderately suitable final host of H. continua.

• Clinical and Experimental Pediatrics
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• v.48 no.10
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• pp.1055-1060
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• 2005

Purpose : The purpose of this study is to compare the growth pattern of breast fed and formula fed infants in the first 1 year of life. Methods : Anthropometric data(weight, length, head circumference) of at birth, 1, 3, 6, 9 and 12 months were collected by chart review and characteristics of subjects were collected by questionnaires. Among 358 infants, breast fed infants were 161(84 males, 77 females) and formula fed infants were 90(42 males, 48 females). Neither group was given solid foods before 4 months. The weight for age, length for age and head circumference for age were calculated. Breast fed infants were separated into 2 groups(breast fed for 4-11 months and breast fed for more than 12 months). Results : Characteristics of infants and mothers were similar in both groups except for maternal age. Mean weight of breast fed group was lower than that of formula fed group at 12 months of age(male : P=0.004, female : P=0.004). However, mean weight of 12 months breast fed group was below formula fed groups weight at 9 and 12 months(P<0.05). Mean length and head circumference were similar between groups. Conclusion : The growth indices of breast fed and formula fed infants are similar at birth, but weight curves of two groups differ in the first 1 year.

• Journal of Oral Medicine and Pain
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• v.35 no.1
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• pp.19-29
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• 2010

Phytoncide, essential oil of trees, has microbicidal, insecticidal, acaricidal, and deodorizing effect. The present study was performed to examine the effect of phytoncide on Candida albicans, which is a commensal colonizer of the mucous membranes but has become an opportunistic pathogen. C. albicans was incubated with or without phytoncide extracted from Hinoki (Chamaecyparis obtusa Sieb. et Zucc.; Japanese cypress) and then changes were observed in its optical density, cell viability and morphology. As concentrations of phytoncide added to the culture medium increased, optical density and cell viability of C. albicans decreased. Minimum inhibitory concentration of phytoncide for C. albicans was observed to be 0.25%, and minimum fungicidal concentration was 0.5%. Numbers of morphologically atypical cells with electron-dense cytoplasm and granules and increased with increasing concentration of the phytoncide. At higher concentrations of phytoncide, compartments and organelles in the cytoplasm became indistinguishable. The overall results indicate that the phytoncide used for this study has a strong antimicrobial activity against C. albicans. Therefore, the phytoncide may be used as a candidate for prevention and therapeutic agent against oral candidiasis.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.127-136
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• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.3
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• pp.39-46
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• 2016

For several decades, Korean corporations have achieved remarkable success in the world market pursuing a quantitative growing strategy by benchmarking developed countries such as the United States, Japan and European Union. Recently, however, since not only the world economy enters into low growth age of New Normal, but the continuously increasing pressure of emerging countries like China and India, the global position of Korean corporations has ruffled. For these reason, the purpose of the study based on searching the strategy for Korean corporations to promote sustainable growth while gaining a competitive advantage in the world market. The study uses two analytical tools, Porter's Diamond Model and Productivity Frontier by analyzing the smart phone industry where Korea, the United States and China are competing desperately. The study is aimed at analyzing and comparing the global competitiveness among Apple as a leader, Samsung Electronics as a follower and Chinese corporations as newcomers in the smart phone industry. Based on the analysis and comparison, the study focuses on searching the strategic decision of Samsung Electronics, and suggests the future strategic positioning of major corporations in different industries in the world market.