• Microbiology and Biotechnology Letters
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• v.33 no.1
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• pp.51-55
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• 2005

The effect of rotation speed and culture temperature on the growth of T. aureum and also the biosynthesis of lipid and DHA was investigated. The optimal temperature for the growth was $32^{\circ}C$, but the best temperature for the maximum production of lipid and DHA was $18^{\circ}C$ in the range of $4^{\circ}C\;to\;39^{\circ}C$. In the case that the temperature was higher than $39^{\circ}C$ and lower than $11^{\circ}C$, the growth was very slow and the production of DHA was also very low. However, the lipid content in the biomass became higher with decrease in the culture temperature. The rotation speed for the maximum growth was 100rpm. But the growth and the production of DHA were not affected by the change of rotation speed in the range of 100 to 250 rpm. When the rotation speed was 50 rpm, the growth as well as the production of DHA and lipid was greatly reduced.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.78-84
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• 1993

Hot-Wall Epitaxy(HWE) 방법으로 ZnSe/ZnSe(bulk) 박막을 성장하였다. 이 때 사용되어진 ZnSe 기판은 승화법으로 증발부분의 온도를 $1160^{\circ}C$ 성장부분의 온도를 $1130^{\circ}C$로 하여 약 2주 동안 직경 20mm, 높이 18mm인 원추형의 ZnSe 단결정을 얻었다. 양질의 ZnSe 박막을 얻기 위한 조건은 증발부분의 온도는 $610^{\circ}C$, 기판의 온도는 49$0^{\circ}C$이었다. ZnSe(bulk) 기판위에 성장한 ZnSe 박막의 광발광에서는 강한 D-A pair emission과 Cu 불순물에 의한 녹색과 적색 발광이 관측되었고 SA 발광은 관측되지 않았다.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.15-20
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• 1999

Elevated temperature static fatigue behavior of silicon has been investigated by stress intensity/life test method. Static fatigue crack growth rate increase with the increase of temperature. Such tendency is found to be mainly related to the decrease of fracture toughness with the increase of temperature. That is, when static fatigue crack growth rate, da/dt is expressed by da/dt=AK1m, a constant A is a function of fracture toughness Kc and the exponent m is a constant which is independent of temperature or Kc. However, in the case of high temperature that glass phase is softened, the crack growth rate is found to be deviated from the above relation. This reason is, thus, discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.381-388
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• 2000

The temperature and velocity fluctuations occurred by the baroclinic instability in the melt for Czochralski crystal growth method were experimentally investigated. Wood's metal, which has similar Pr number to the silicon melt, was used as the working fluid and azimuthal velocity was measured using incorporated magnet probe. The azimuthal velocities near the free surface are faster than velocities near the bottom and the rotational velocities near the model crystal become very fast. The results of measured temperature fluctuation as increasing rotation rate were shown that baroclinic instability occurred at the region of Ro<1.01, Ta>$9.63{\times}10^8$. In these region, the fluctuations of temperature and velocity have the same frequency.

• Proceedings of the Korea Information Processing Society Conference
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• 2019.10a
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• pp.858-860
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• 2019

본 논문에서 우리는 범함수 회귀모형을 이용한 양파의 성장단계별 무게를 예측할 수 있는 새로운 통계적 추정방법을 제안한다. 여기서 우리는 풍속, 평균온도, 강우량, 일조량 그리고 습도 등 나타내는 환경요인들을 설명변수들로 사용하고, 양파의 성장단계별 무게를 반응변수로 사용하여 범함수 회귀모형을 적용하였다. 먼저 그래프분석과 상관분석을 통하여 우리는 일일 평균온도는 양파의 무게 증진에 가장 큰 양의상관이 있고, 풍속이나 습도 그리고 일조량들은 양파의 성장에 약간의 영향력이 있으며 강우량은 양파의 성장에 전혀 도움이 안됨을 알 수 있었다. 두 번째로 범함수 회귀 분석을 통하여 얻어진 각 환경요인들에 대한 회귀계수들의 그림을 통하여 우리는 양파의 성장 기간 동안에 이들의 무게를 향상시키기 위해서는 어떻게 환경요인들을 관리해야 되는 가를 알 수 있는 재배방법을 유도하였다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.51-55
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• 1997

이트륨 옥살레이트 결정화에 있어서 반응물의 농도, 반응 온도, 반응물의 주입속도 변화등의 반응조건(reaction condition)의 변화와 반응기 내에서의 교반속도와 같은 hydrodynamic condition의 변화가 생성된 옥살레이트 결정의 입자크기, 결정형태등에 미치는 영향을 체계적으로 관찰하였다. 그리고 agglomeration의 영향에 의한 particle의 크기변화에 있어 생성물의 과포화는 agglomerates를 결정 짓는 가장 중요한 변수이다. 또한 반응성 결정화에 의해서 얻어진 Yttrium Oxalate가 온도 변화에 따라서 Yttrium Oxide로 열분해되는 온도구간과 결정구조의 변화 및 분자 구조의 변화를 관찰하여 최종의 Yttrium Oxide가 생성되는 것을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.198-202
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• 1994

Zn0.5Mg0.5Te 및 Zn0.5Mg0.5Te:Co 단결정을 온도진동법을 응용한 화학수송법으로 성장시켰고, 광 학적 energy gap의 온도의존성은 Varshni의형식에 잘 적용되었다. 광학적 energy gap의 온도의존성으 로부터 열역학 기본함수인 entropy, enthalpy, heat capacity를 구했다.

• KOREAN POULTRY JOURNAL
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• v.32 no.3 s.365
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• pp.96-99
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• 2000

육계 사양가의 목적은 최소가능비용으로 육계의 만족스런 성장을 이끌어 내는데 있다. 이런 만족스런 성장을 이루기 위해서는 온도, 환기, 습도관리가 중요하나 특히 우리나라처럼 혹한, 혹서기 기후를 가진 지역에서는 환기가 다른 어떤 요인보다 더 중요하다. 일반 사양가에서는 혹한기 온도에 치중하다보면 습도가 높아지게 되고 적정습도유지에 신경을 쓰다보면 온도가 문제가 되는데 이런 경우에 우리는 환기관리의 중요성을 실감케 된다. 환기관리는 단순히 공기교체나 산소공급만을 의미하는 것이 아니라 최적의 환기관리를 통해 질병발생율을 최소화하여 생산성 극대화를 이루도록 하는데 있다.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.77-81
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• 1998

The eptiaxial growth of Ge on the clean and surfactant (Sn) adsorbed surface of Ge(111) was studied by the intensity oscillation of a RHEED specular spot. In the case of epitaxial growth without the adsorbed surfactant, the RHEED intensity oscillation was stable and periodic up to 24 ML at the substrate temperature of $200^{\circ}C$. Therefore the optimum temperature for the epitaxial growth of Ge on clean Ge(111) seems to be $200^{\circ}C$. However, in the case of epitaxial growth with the adsorbed surfactant, the irregular oscillations are observed in the early stage of the growth. The RHEED intensity osicillation was very stable and periodic up to 38 ML, and the d2$\times$2 structure was not charged with continued adsorption of Ge at the substrate temperature of 2002$\times$2. These results may be explained by the fact that the diffusion length of Ge atoms is increased by decreasing the activation energy of the Ge surface diffusion, resulted by segregation of Sn toward the growing surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.56-61
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• 2015

The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at $1000^{\circ}C$ and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi-layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at $1000^{\circ}C$, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at $1000^{\circ}C$ and V/III ratio = 10 showed the lowest value FWHM for RC of a-plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.