• Journal of Radiation Protection and Research
• /
• v.32 no.4
• /
• pp.178-183
• /
• 2007

Neutrons are high LET (linear energy transfer) radiation and cause more damage to the target cells than x-rays or gamma rays. The damage from neutrons is generally considered fatal to a cell and neutrons have a greater tendency to cause cell death through direct interaction on DNA. We performed experiments to measure growth delay ratio and oxygen enhancement ratio (OER) in mouse model system. We inoculated EMT-6 cells to the right hind leg of BALB-c mouse and X-rays and neutron beams were given when the average volume of tumors reached $200-300mm^3$. We irradiated 0, 11, 15.4 Gy of X-ray and 0, 5, 7 Gy of fast neutron beam at normoxic and hypoxic condition. The volume of tumors was measured 3 times per week. In x-ray experiment, growth delay ratio was 1.34 with 11 Gy and 1.33 with 15.4 Gy in normoxic condition compared to in hypoxic condition, respectively. In neutron experiment, growth delay ratio was 0.94 with 5 Gy and 0.98 with 7 Gy, respectively. The OER of neutron beam was 0.97. The neutron beam was more effective than X-ray in the control of hypoxic tumors.

• Journal of the Korean Vacuum Society
• /
• v.18 no.6
• /
• pp.474-480
• /
• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.294-300
• /
• 2006

We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal-organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self-assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 nm, which was red-shifted by 18 nm from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.

• Journal of the Korean Chemical Society
• /
• v.42 no.6
• /
• pp.607-617
• /
• 1998

Au was dosed on $TiO_2(001)$ film grown epitaxially on Mo(100) surface in about 90 ${\AA}$ thickness. The growth mode of Au, thermal behavior and stability of the Au clusters, and the binding energy shift of Au 4f with the change in the amount of Au loading were studied by Auger Electron Spectroscopy (AES), Temperature Programmed Desorption (TPD) spectroscopy, Ion Scattering Spectroscopy (ISS), and X-ray Photoelectron Spectroscopy (XPS). Au grows three dimensionally on $TiO_2(001)$ film and the average size of Au clusters prepared at low temperature is smaller than those at higher temperature and the size increases with temperature irreversibly. Au clusters on $TiO_2(001)/Mo(100)$ start evaporation at 1000 K. TPD spectra of Au show very asymmetric peaks with the same leading edges irrespective of the amount of Au loading. The temperature at the peak maximum increases with the amount of Au. The desorption energy of Au obtained from the leading edge analysis of the TPD spectra is about 50 kcal/mol. The initial sticking coefficient of Au on $TiO_2(001)$ is constant in the temperature range of 200-600 K. The binding energy of Au 4f for the Au loaded on the film less than 2.0 MLE shifts to higher energy compared with the bulk Au. The shift is +0.3 eV at 0.1 MLE Au amount.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.7 no.2
• /
• pp.91-97
• /
• 1974

Two scale characters, the width ana circuli counts of the first-year band, were used in a discriminant function analysis to see how effectively the two scale characters would separate geographical chum stocks from the western North Pacific. A total of 476 scale samples were taken from spawning adults which ascended to rivers of Hokkaido, Japan, in 1956, and Kamchatka, the U.S.S.R., in 1957. The scale characters were examined for conformity to the statistical requirements of a discriminant function. As a result of the examinations the two characters were verified to be able to be used in a discriminant function analysis that would classify chum taken on the high seas to most Probable origin. A discriminant function computed using the two characters correctly classified 78.5 percent of the Hokkaido and Kamchatka chum fish. Of the two characters the number of the circuli could alone classify fish to its origin with nearly the same probability of correct classification as the discriminant function based on the two characters can.

• Korean Journal of Crystallography
• /
• v.8 no.1
• /
• pp.38-47
• /
• 1997

A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.11-20
• /
• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• Journal of radiological science and technology
• /
• v.37 no.4
• /
• pp.253-259
• /
• 2014

Large volume of $6{\times}6{\times}12mm^3$ CdZnTe ${\gamma}$-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in $^{137}Cs$. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV ${\gamma}$-peak of $^{137}Cs$ with virtual Frisch-grid CdZnTe detector.

• Food Science of Animal Resources
• /
• v.26 no.4
• /
• pp.471-477
• /
• 2006

This study was conducted to evaluate the application of high dose irradiation for ensuring shelf stability of marinated and precooked pork rib steak in the severe environments such as desert or space, etc. Marinated and precooked pork rib steak was manufactured, vacuum-packaged and gamma-irradiated with the absorbed doses of 10, 20, 30, 40 and 50 kGy, and used for the tests of the growth of microorganisms and lipid oxidation during storage at 35t of acceleration condition. Any growth of microorganisms was not observed in irradiated samples after irradiation immediately. However, the growths were observed in 10, 20 and 30 kGy samples at 4, 7 and 14 day storage, respectively. High dose (40 and 50 kGy) gamma irradiation retarded the growth of aerobic microorganisms by the analysis of kinetic parameter. The content of malondialdehyde increased in all samples during storage periods, and gamma irradiation accelerated the increase of lipid oxidation. Therefore, the application of combination of the various food processing technology should be considered for the sterilization of marinated and precooked pork rib steak without any deterioration of the quality occurred by high dose irradiation.

• Korean Journal of Optics and Photonics
• /
• v.7 no.3
• /
• pp.227-231
• /
• 1996

The reflection spectrum of a $2H-PbI_2$ single crystal grown by vapour phase method were measured at 10 K near the fundamental absorption edge. The n= 1,2,3 Wannier exciton series and $A_{EP}$ reflection line were obtained from the reflection spectrum. Based on the 2nd phonon energy in the Raman spectrum, which is different from Nagamune's report, we suggest that $A_{EP}$ line is due to the bound state between the n=2 exciton and the 2nd phonon which surmise that this is LO phnon due to the second Raman process. The L-T splitting energy of n=1 exciton line was 6.56 meV and was consistent with the emission spectrum. The temperature dependence of the reflection spectrum showed that n=1 exciton peak was shifted to longer wavelength while, as the temperatre is raised, the sharpness of that with the increase of the L-T splitting energy decrease. From Wannier exiton series, the exciton binding energy and exciton radius was 30 meV and 14$\AA$, respectively.