• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.60.2-60.2
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• 2011

본 연구에서는 Indium-free 및 gallium-free 기반의 산화물 TFT를 제작하기 위해 n-type $TiO_2$ 반도체 기반의 thin film transistor ($Mo/TiO_{2-x}/SiO_2/p+\;+Si$)를 oxygen deficient black $TiO_{2-x}$ 타겟을 이용하여 DC magnetron sputtering 공법으로 제작하고 그 특성을 분석하였다. DC magnetron sputtering 공법으로 성막된 $TiO_{2-x}$ semiconductor의 전기적, 광학적, 화학적 결합 에너지 및 구조적 특성 분석을 위해 semiconductor parameter analyzer (Aglient 4156-C), UV/Vis spectrometer, X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy를 각각 이용하여 분석하였으며 이를 RTA 전/후 특성 비교를 통하여 관찰하였다. $TiO_{2-x}$ TFT의 소자 특성은 RTA 열처리 전/후 전형적인 insulator 특성에서 semiconductor 특성으로 변화되는 것을 관찰할 수 있었으며, 최적화된 열처리 공정에서 filed effect mobility 0.69 $cm^2$/Vs, on to off current ratio $2.04{\times}10^7$, sub-threshold swing 2.45 V/decade와 Vth 10.45 V를 확보할 수 있었다. 또한 RTA 열처리 후 밴드갭이 3.25에서 3.41로 확장되는 특성을 나타내었다. 특히 RTA 열처리 후 stoichiometric $TiO_2$ 상태와는 다른 $Ti^{2+}$, $Ti^{3+}$, $Ti^{4+}$ 등의 다양한 oxidation states가 관찰되었으며 이러한 oxidation states를 $TiO_{2-x}$ 박막에서의 oxygen deficient 상태와 연관시킴으로써 oxygen vacancy의 n-type dopant로의 거동을 확인하였다. $TiO_2$ 채널 기반의 TFT 특성을 통하여서 indium free 또는 gallium free 산화물 채널로써의 가능성을 확인하였다.

• Membrane Journal
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• v.11 no.2
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• pp.74-82
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• 2001

By using a phenomenological approach, model equations incorporating the resistance-in¬series concept were established to evaluate quantitatively concentration polarization in the boundary layer in feed adjacent to the membrane surface in the vapor permeation and separation of volatile organic compounds (VOCS)/$N_2$ mixture through po]y(dimethylsiloxane) (PDMS) membrane. The vapor permeations of various VOCS/$N_2$ mixtures through PDMS membrane were carried out at various feed flow rates. Chlorinated hydrocarbons, such as, methylene chloride, chlorofonn, 1,2-clichloroethane and 1,1,2-trichloroethane were used as organic vapor. By fitting the model equations to the experimental penneation data. the model parameters were detennined. respectively. Both the mass transfer coefficient of VOC across tbe boundary layer and concentration polarization modulus as a measure of the extent of concentration polarization were eitimated Quantitatively by the mooe1 equations with the determined model parameters. From the analysis on the detennined model parameters, the boundary layer resistance due to the concentration polarization of VOCs component was found to be more significant when the condensability of voe was greater. This study seeks to emphasize the importance of the boundary resistance on the vapor penneation of the vapor/gas mixtures with high permeability and high selectivity towards the minor component VOC.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.160-167
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• 1994

In order to develop new magnetic media with higher coercivity, we have investigated the magnetic properties of Co-P/Cr and Co-P-Cr/Cr films. The coercivity of Co-P binary films deposited at RT was around 835 Oe in the range of 9-12 at.% P. In the Co-P binary system coercivity decreased with increasing substrate temperature for P contents of 9-12 at.%, which may be due to the decomposition of Co-P single phase to Co and $Co_{2}P$ phase. However, the coercivity of the films containing more than 12 at.% P is very low due to the formation of amorphous phase. The coercivity of Co-P-Cr ternary films increased with increasing Cr contents and reached the maximum value of 1020 Oe in the water $Co_{84}P_{10}Cr_{6}$ Film.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.184-190
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• 2003

$Sr_{0.9}Bi_{2.1}Ta_2O_9$thin films were deposited on $IrO_2$ electrode by spin coating method using photosensitive sol-gel solution. To ensure the UV-exposure effect on SBT thin films, UV irradiated films and non-UV irradiated films were analyzed by XRD, SEM. As a result, UV-irradiation on SBT thin films promoted grain growth of SBT compared with no UV irradiation. In case of the UV irradiated films annealed at$740{\circ}C$for 1 h in an oxygen ambient, the 2Pr value and Pr/Ps at${pm}5$V were$11.48{mu}C/cm^2$and 0.53, respectively. 2Pr values of the UV irradiated SBT thin films at$660-740{circ}C were approximately 12% higher than those of non-UV irradiated thin films.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.28 no.4
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• pp.290-301
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• 2002

The purpose of this study was to evaluate new bone formation and healing process in rat calvarial bone defects using $BioMesh^{(R)}$. membrane and DFDB. Forty eight rats divided equally into 4 groups of 1 control group and 3 experimental groups. Standardized transosseous circular calvarial defects (8 mm in diameter) were made midparietally. In the control group, the defect was only covered with the soft tissue flap. In the experimental group 1, it was filled with DFDB only, in the experimental group 2, it was covered $BioMesh^{(R)}$. membrane only, and in the experimental group 3, it was filled DFDB and covered with membrane. At the postoperative 1, 2, 4, 8 weeks, rats were sacrificed and histologic and histomorphometric analysis were performed. These results were as follows. In histomorphometric analysis, It showed the greatest amount of new bone formation through experimental in the experimental group 3 (P<0.001). The amount of new bone formation at the central portion of the defect was greater in the experimental group 3 than experimental group 2. $BioMesh^{(R)}$. membrane began to resorb at 1 week and resorbed almost completely at 8 weeks after operation. The collapse of membrane into the defect was observed through the experimental periods in the experimental group 2. In the area of collapsed membrane, new bone formation was restricted. These results suggest that maintenance of some space for new bone to grow is required in the use of $BioMesh^{(R)}$. membrane alone in the defect. It is also thought that use of the membrane may promote new bone growth in DFDB graft.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.502-508
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• 1999

We prepared non-porous membrane on the $Al_2O_3$ substrate with the different pore by the size by the plasma polymerization of $CHF_3$. We studied the permeability characteristics of membrane by Ar treatment and the effect of substrate pore size on gas permeation mechanism. The selectivity was increased with Ar plasma treatment time and rf-power near the substrate to the cathode while the permeability was decreased. It was observed that the solution-diffusion model would be applied to non-porous layers while it is applied Knudsen diffusion model to the substrate. From the experimental observation, it could be concluded that the pore size of $Al_2O_3$ membrane influenced on the permeability and the selectivity.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.7-13
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• 1995

A new FET type semiconductor pressure sensor (PSFET : pressure sensitive field effect transistor) was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, $5000{\AA}$ thick, was deposited on a gate oxide of FET by RF magnetron sputtering. The deposition conditions to obtain a c-axis poling structure were substrate temperature of $300^{\circ}C$, RF power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET device showed good linearity and stability in the applied pressure range($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.209-209
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• 1999

현재 magnetron sputter는 반도체, LCD 등을 포함하는 microelectronics 산업에서 박막형성을 위한 주요 장비로 널리 쓰이고 있으며, 소자의 고집적화 및 대형화 추세에 따라 그 이용가치는 더욱 증대되고 있다. 본 연구엣는 TFT-LCD용 Color Filter 제조시 ITO박막형성을 위해 사용하는 magnetron sputter 내부의 플라즈마 분포 및 ion kinetic energy에 대한 해석을 실시하였으며, ITO target의 erosion 형상의 원인을 실험결과와 비교하였다. Magnetron sputtering은 target에 가해지는 bias 전압(DC 혹은 RF)에 의해 target과 shield 혹은 target과 substrate 사이에서 생성될 수 잇는 플라즈마를 target 및 부분에 붙어있는 영구자석을 이용하여 target 근처에 집중시키고, target 표면과 플라즈마 사이의 전위차에 의해 가속된 이온들이 target 표면과 충돌하여 이차 전자방출을 일으킴과 동시에 target 표면에서 sputtering을 일으키고, 이들 sputtered 된 중성의 atom 들이 substrate로 날아가 박막을 형성하는 원리로 작동된다. 이때 target에서 방출되는 이차전자들은 영구자석에 의한 자기장 효과에 의해 target 근처에 갇히게 되어 중성 기체분자들과 이온화반응을 통해 플라즈마를 유지하고 그 밀도를 높혀주는 역할을 담당하게 된다. 즉 낮은 압력 및 bias 전압에서도 플라즈마 밀도를 높일수 있고 sputtering 공정이 가능한 장점을 가지고 있다. Magnetron sputtering 현상에 대한 시뮬레이션은 크게 magnetron discharge와 sputtering에 대한 해석 두가지로 나누어 볼 수 있는데, sputtering 현상 자체를 수치묘사할 수 있는 정량적인 모델은 아직까지 명확하게 정립되어 있지 않다. 따라서 본 연구에서는 magnetron plasma 자체에 대한 수치해석에 주안점을 두고 아울러 bulk plasma 영역에서 target으로 입사하는 이온들의 입사에너지 및 입사각도 등을 Monte Carlo 방법으로 추적하여 sputtering 현상을 유추해보았다. Sputtering 현상을 살펴보기 위해 magnetron sputter 내 플라즈마 밀도, 전자온도, 특히 target 및 substrate를 충돌하는 이온의 입사에너지 및 입사각 분포등을 계산하는데 hybrid 방법으로 시뮬레이션을 하였다. 즉 ion과 bulk electron에 대해서는 fluid 방식으로 접근하고, 이차전자 운동과 그로 인한 반응관계 및 target으로 입사하는 이온의 에너지와 입사각 분포는 Monte-Carlo 방법으로 처리하였다. 정지기장해석의 경우 상용 S/W인 Vector Fields를 사용하였다. 이를 통해 sputter 내 플라즈마 특성, target으로 입사하는 이온에너지 및 각 분포, 이들이 target erosion 형상에 미치는 영향을 살펴보았다. 또한 이들 결과로부터 간단한 sputtering 모델을 사용하여 target으로부터 sputter된 입자들이 substrate에 부착되는 현상을 Monte-Carlo 방법으로 추적하여 성막특성도 살펴보았다.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.411-417
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• 2008

Aerosol Deposition Method (ADM) is a novel technique to grow ceramic thick films with high density and nano-crystal structure at room temperature. $^{1,2)}$ For these unique advantages of ADM, it would be applied to the fabrication process of 3-D integration ceramic modules effectively. However, it is critical to control the properties of starting powders, because a film formation through ADM is achieved by impaction and consolidation of starting powders on the substrates. We fabricated alumina thick films by ADM for the application to integral substrates for RF modules. When the as-received alumina powders were used as a starting material without any treatments, it was observed that the dielectric properties of as-deposited alumina films, such as relative permittivity and loss tangent, showed high dependency on the frequency. In this study, some techniques of powder pre-treatments to improve the dielectric properties of alumina thick films will be shown and the effects of starting powders on the properties of AD films will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.385-390
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• 2013

$(Ga_2O_3)_x(ZnO)_{100-x}$ (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the $Ga_2O_3$ content. The GZO film with an atomic ratio of $Ga_2O_3$ of x= 7 wt.%, shows the lowest resistivity of $7.5{\times}10^{-4}{\Omega}{\cdot}cm$. The GZO films were also prepared at various substrate temperatures from room temperature to $300^{\circ}C$, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of $2.8{\times}10^{-4}{\Omega}{\cdot}cm$ that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of $300^{\circ}C$ by using the FTS.