• Title/Summary/Keyword: 선형 전력증폭기

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Design of a Predistorter with Multiple Coefficient Sets for the Millimeter-Wave Power Amplifier and Nonlinearity Elimination Performance Evaluation (다중계수 방식을 적용한 밀리미터파 대역용 전력증폭기의 사전왜곡기 설계 및 비선형성 보상 성능 평가)

  • Yuk, Junhyung;Sung, Wonjin
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.8
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    • pp.740-747
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    • 2015
  • Recently, mobile communication systems using the millimeter-wave frequency band have been proposed, and the importance of efficient compensation of the nonlinearity caused by 60 GHz high-power amplifiers(HPAs) is increasing. In this paper, we propose a predistorter structure based on multiple coefficient sets which are separately used to different ranges of input power values. These ranges correspond to varying levels of nonlinearity characteristics. The structure is applied to the 60 GHz HPA FMM5715X and the performance of correcting the nonlinearity of LTE signals is evaluated. Evaluation results using a hardware testbed demonstrate that the proposed predistorter structure achieves the maximum of 6 dB gain over the conventional method in terms of the adjacent channel leakage ratio(ACLR).

Design of 900MHz Low Noise Amplifier (900MHz대 저전력 저잡음 증폭기 설계)

  • 김영호;정항근
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.671-674
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    • 1998
  • 본 논문에서는 최근 급격히 수요가 증대하고 있는 휴대용 단말기의 수신기 선단에 사용되는 저잡음 증폭기(LNA)를 0.6㎛ CMOS공정 파라미터를 사용하여 설계하였다. 설계된 LNA는 전원 전압 ±1.2v, 900㎒대에서 동작하는 전류 재사용방식의 적층 CMOS구조로서 시뮬레이션 결과 전력소모가 9.45㎽, 전력이득은 23.7dB, 선형지수 OIP3는 7.6dBm을 나타내어 저전력 저잡음 특성을 얻었다. 사용된 인덕터의 Q는 3.5이다.

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Thermal Memory Effect Modeling and Compensation in Doherty Amplifier (Doherty 증폭기의 열 메모리 효과 모델링과 보상)

  • Lee Suk-Hui;Lee Sang-Ho;Bang Sung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.9 s.339
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    • pp.49-56
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    • 2005
  • Memory effect, which influence the performance of Doherty amplifier, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power level increase. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier's distortion generation. Also this raper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the Doherty amplifier. Parameters for the nelv proposed behavior model were determined from the Doherty amplifier measurements obtained under different excitation conditions. This study led us to conclude that the effects of the transistor self-heating phenomenon are important for signals with wideband modulation bandwidth(ex. W-CDMA or UMTS signal). Doherty amplifier with electrothermal memory effect compensator enhanced ACLR performance about 20 dB than without electrothemal memory effect compensator. Experiment results were mesured by 60W LDMOS Doherty amplifier and electrothermal memory effect compensator was simulated by ADS.

High Efficiency Power Amplifier applied to 5G Systems (5G 시스템에 적용되는 고효율 전력증폭기)

  • Young Kim
    • Journal of Advanced Navigation Technology
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    • v.27 no.2
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    • pp.197-202
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    • 2023
  • This paper presents the design method and electrical characteristics of a high-efficiency power amplifier for a 50 Watts class repeater applied to a 5G system and used in in-building, subway, and tunnel. GaN was used for the termination transistor of the power amplifier designed here, and intermodulation signals were removed using DPD to satisfy linearity. In addition, in order to handle various requirements such as amplifier gain control and alarm processing required in the 5G system, the microprocessor is designed to exist inside the power amplifier. The amplifier manufactured to confirm the electrical performance of the power amplifier satisfying these conditions satisfied 46.5 dBm and the overall efficiency of the amplifier was 37%, and it was confirmed that it satisfied various alarm conditions and electrical characteristics required by telecommunication companies.

Design of A Piecewise Polynomial Model Based Digital Predistortion for 60 GHz Power Amplifier (60 GHz 대역 전력 증폭기를 위한 구간별 차등 다항식 모델 기반의 디지털 사전왜곡기 설계)

  • Kim, Minho;Lee, Jingu;Kim, Daehyun;Kim, Younglok
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.3-12
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    • 2016
  • Recently, the study on 5G mobile communication systems using the millimeter-wave frequency band have been actively promoted and the importance of compensation of the nonlinearity of power amplifier caused by the characteristics of millimeter-wave frequency propagation attenuation is increasing. In the paper, we propose a piecewise polynomial model based on subdivision coefficient which are characteristics of power amplifier separated linear section and a non-linear section. In addition, the structure of digital predistortion based on the proposed model and direct learning method are proposed to implement a digital predistortion. To verify the proposed model, digital predistortion based on the proposed model and direct learning method for 60 GHz power amplifier using LTE signal implemented in the FPGA. And the hardware test bench measured performance and complexity. The proposed model achieves 3.3 dB gain over the single polynomial model in terms of the ACLR and reduces 7.5 percent in terms of the complexity.

Predistorter Design for a Memory-less Nonlinear High Power Amplifier Using the $rho$th-Order Inverse Method for OFDM Systems ($rho$차 역필터 기법을 이용한 OFDM 시스템의 메모리가 없는 비선형 고전력 증폭기의 전치 보상기 설계)

  • Lim, Sun-Min;Eun, Chang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.2C
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    • pp.191-199
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    • 2006
  • In this paper, we propose a method to implement a predistorter of the $rho$-th order inverse filter structure to prevent signal distortion and spectral re-growth due to the high PAPR (peak-to-average ratio) of the OFDM signals and the non-linearity of high-power amplifiers. We model the memory-less non-linearity of the high-power amplifier with a polynomial model and utilize the inverse of the model, the $rho$-th order inverse filter, for the predistorter. Once the non-linearity is modeled with a polynomial, since we can determine the $rho$-th order inverse filter only with the coefficients of the polynomial, large memory is not required. To update the coefficients of the non-linear high-power amplifier model, we can use LMS or RLS algorithms. The convergence speed is high since the number of coefficients is small, and the computation is simple since manipulation of complex numbers is not necessary.

PAPR Reduction Techniques and Pre-Distortion Techniques to Improve Nonlinearity and Efficiency of the TWT Power Amplifier in the Satellite Wibro System (위성 WiBro 시스템에서 전력 증폭기의 효율성 향상과 비선형성 개선을 위한 PAPR 감소 기법과 사전 왜곡 기법 연구)

  • Park, Pyung-Joo;Seo, Myung-Hwan;Lee, Byung-Seub
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.12
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    • pp.1303-1312
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    • 2008
  • Satellite WiBro system has high PAPR characteristics in addition to the nonlinear characteristics of the power amplifier. These characteristics reduce amplifying efficiency of the power amplifier and also cause high error rate and interference with adjacent channels. This paper proposed satellite WiBro based system to reduce input signal's IBO of TWTA remarkably by adapting simultaneously PAPR reduction techniques, active-constellation extension technique and pre-distortion technique.

Dual-Band Class F Power Amplifier using CRLH-TLs for Multi-Band Antenna System (다중밴드 안테나 시스템을 위한 CRLH 전송선로를 이용한 이중대역 Class F 전력증폭기)

  • Kim, Sun-Young;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.12
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    • pp.7-12
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    • 2008
  • In this paper, a highly efficiency power amplifier is presented for multi-band antenna system. The class F power amplifier operating in dual-band designed with one LDMOSFET. An operating frequency of power amplifier is 900 MHz and 2.14 GHz respectively Matching networks and harmonic control circuits of amplifier are designed by using the unit cell of composite right/left-handed(CRLH) transmission line(TL) realized with lumped elements. The CRLH TL can lead to metamaterial transmission line with the dual-band holing capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of all harmonic components for high efficiency is very difficult, we have controled only the second- and third-harmonics to obtain the high efficiency with the CRLH TL. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency.

Realization of High Linear Doherty Amplifier Using PBG (PBG 구조를 이용한 고선형성 Doherty 전력 증폭기 구현에 관한 연구)

  • Lee Sangman;Seo Chulhun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.2 s.332
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    • pp.81-86
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    • 2005
  • In this paper, the high linear Doherty amplifier has been realized by employing the PBG(Photonic Band Gap) structure. The PBG structure has been employed on the output matching network of the power amplifier. The proposed Doherty amplifier has been improved in PAE and IMD. The PAE has been $36.4\%$ and the IMD has been -24.5 dBc, respectively.

Design of a Dual-band Class-E Power Amplifier using Metamaterial CRLH Transmission Lines (Metamaterial CRLH 전송선로를 이용한 이중대역 Class-E 전력증폭기 설계)

  • Lim, Sung-Gyu;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.48 no.9
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    • pp.54-58
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    • 2011
  • In this paper a dual-band Class-E power amplifier using Composite Right-/Left-Handed transmission lines and PIN diode is proposed. Dual-band operation is achieved by the frequency offset and nonlinear phase slope of CRLH TL for the matching network of power amplifiers. The proposed power amplifier has been realized by using in the input and the output matching network for high power added efficiency. PIN diode has been used to obtain the dual-band of power amplifier. The measured results show that output powers of 42.17 dBm and 41.43 dBm were obtained at 800 MHz and 1900 MHz, respectively. At this frequency, we have obtained the power-added efficiency(PAE) of 67.84 % and 65.31 % in two operation frequencies, respectively.