• The Journal of the Korea Contents Association
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• v.14 no.11
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• pp.355-361
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• 2014

The aim of the present study was to evaluate a relative emission of image plate (IP) in computed radiography (CR) system by using relative sensitivity in film/screen methods. The characteristic curve was obtained by using the uniform aluminum 11-step wedge penetrometer. X-ray exposure factors on radiographic digital image were 50 kVp, 10 mAs. We adjusted zero of all parameter of algorithms (MUSICA) so proximate to raw data and applied to 200 of exposure class. Modeling on relative emission of IP are used IP without fading time and IP after 4 hours, 8 hours, 12 hours, 24 hours in the respective storage after X-ray exposure. The results of this study showed that the sensitivity point density at the measuring of relative sensitivity in CR was suited pixel values of the 2000 easy to relatively measure the characteristic curve and when relative sensitivity is decreased, the amount of light emitted from the image signal for generating was also decreased. In conclusion, the proposed method of measurement of relative sensitivity can be utilized to evaluate the quantity of relative emission of IP in CR system.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.15 no.1
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• pp.8-15
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• 2010

An experiment was conducted to evaluate the biologically adverse effect of increased carbon dioxide in seawater on marine bacteria, Vibrio fischeri. We measured the bioluminescence and cell density at every 6 hours for 24 hours of the whole incubation period after exposing test microbes to a range of $CO_2$ concentration such as 380(Control), 1,000, 3,000, 10,000 and 30,000 ppm, respectively. Significant effect on relative luminescence(RLU) of V. fischeri was observed in treatments with $CO_2$ concentration higher than 3,000 ppm at t=12 h. However, the difference of RLU among treatments significantly decreased with the incubation time until t=24 h. Similar trend was observed for the variation of cell density, which was measured as optical density using spectrophotometer. The results showed that a significant relationship between $CO_2$ concentration and bioluminescence of test microbes was observed for the mean time. However, the inhibition of relative bioluminescence and also cell density could be recovered at the concentration levels higher than 3,000 ppm. The dissolved $CO_2$ can be absorbed directly by cell and it can decrease the intracellular pH. Our results implied that microbes might be adversely affected at the initial growing phase by increased $CO_2$. However, they could adapt by increasing ion transport including bicarbonate and then could make their pH back to normal level. Results of this study could be supported to understand the possible influence on marine bacteria by atmospheric increase of $CO_2$ in near future and also by released $CO_2$ during the marine $CO_2$ sequestration activity.

• Journal of the Korean Society of Propulsion Engineers
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• v.18 no.1
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• pp.73-84
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• 2014

The present paper includes recent research works on the estimation of physical properties like equivalence ratio and heat release rate of flame through chemiluminescence measurement. Modern combustion devices require a precise control to increase combustion stability as well as to suppress pollutant emissions. The determination of combustion characteristics from chemiluminescence provides practical advantages over other techniques. However, the technique is dependent on equivalence ratio, combustion pressure, inlet temperature, turbulent intensity and fuel type. The intensity ratio of $OH^*$ and $CH^*$ has a strong relation with an equivalence ratio for methane/air premixed flames. The global measurement of chemiluminescence is accepted as a good indicator for a global heat release rate.

• Journal of the Korean Society of Radiology
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• v.5 no.5
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• pp.283-287
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• 2011

In this study, fine $Gd_2O_2S$:Tb powder was synthesized by using a low temperature solution-combustion method for a high-resolution digital x-ray imaging detector. From the fabricated phosphor power, the fine scintillator films was fabricated by particle sedimentation method and was investigated the luminescent property. From the experimental results of relative light output as a function of terbium concentration, the highest luminescent efficiency has at 5 wt% Tb concentration, and luminescent intensity decreased rapidly according to quenching effect about higher Tb concentration. Also, the relative light output of $270{\mu}m$-$Gd_2O_2S$:Tb film has 2945 pC/$cm^2$/mR. And light intensity was saturated at higher film thickness. Finally, to evaluate an image acquisition performance of fabricated phosphor, images were obtained by using commercial CMOS sensor and measured the MTF, NPS, and DQE. DQE(0 lp/mm) of fine phosphor film has 37%. But, DQE improvement of fine phosphor film is possible by resolving problem of film fabrication process and has a significant potential in the application of digital radiation imaging system later.

• Journal of Radiation Protection and Research
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• v.36 no.2
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• pp.86-92
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• 2011

This study used the optically stimulated luminescence dosimeters (OSLDs), recently, received the revaluation of usefulness in vivo dosimetry, and the diode detecters to measure the skin dose of patient with the rectal cancer. The measurements of dose delivered were compared with the planned dose from the treatment planning system (TPS). We evaluated the clinical application of OSDs in radiotherapy. We measured the calibration factor of OSLDs and used the percent depth dose to verified, also, we created the three point of surface by ten patients of rectal cancer to measured. The calibration factors of OSLD was 1.17 for 6 MV X-ray and 1.28 for 10 MV X-ray, demonstrating the energy dependency of X-ray beams. Comparison of surface dose measurement using the OSLDs and diode detectors with the planned dose from the TPS, The skin dose of patient was increased 1.16 ~ 2.83% for diode detectors, 1.36 ~ 2.17% for OSLDs. Especially, the difference between planned dose and the delivery dose was increased in the perineum, a skin of intense flexure region, and the OSLDs as a result of close spacing of measuring a variate showed a steady dose verification than the diode detecters. Therefore, on behalf of the ionization chamber and diode detecters, OSLDs could be applied clinically in the verification of radiation dose error and in vivo dosimety. The research on the dose verification of the rectal cancer in the around perineal, a surface of intense flexure region, suggest continue to be.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.76-76
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• 2000

최근 비정질 SiC 박막은 열과 광안정도면에서 비정질 Si 박막에 비해 우수하며 공정변수들을조절함으로써 비교적 쉽고 다양하게 광학적.전기적 특성을 얻을 수 있고, 낮은 광흡수계수 및 105($\Omega$cm)1 이상의 높은 전도도를 가지고 있어 Plasma Enhanced Chemical Vapor Deposition(PECVD)을 통해 가전자제어 (Valency electron control)가 가능한 비정질 SiC 박막이 제작된 이래 대한 많은 연구가 진행되고 있다. 결정성이 없는 비정질 물질은 상대적으로 낮은 온도에서 성장이 가능하며, 특히 glow-sidcharge 방식으로 저온에서 성장시킬 수 있음에 따라 유리등과 같은 다른 저렴한 물질을 기판으로 이용, 넓은 면적의 비정질 SiC 박막을 성장시켜 여러 분야의 소자에 응용되고 있다. 비정질 SiC 박막이 넓은 에너지띠 간격을 갖는 물질이라는 점과 화학적 안정성 및 높은 경도, 비정질성에 기인한 대면적 성장의 용이성 등의 장점이외에, 원자의 성분비 변화에 의해 에너지띠 간격(1.7~3.1eV)을 조절할 수 있다는 점은 광전소자의 응용에 큰 잠재성이 있음을 나타낸다. PECVD 방식으로 성장된 비정질 SiC 박막은 태양전지의 Window층이나 발광다이오드, 광센서, 광트랜지스터 등에 응용되어 오고 있다. 본 연구에서는, RF-PECVD(ULVAC CPD-6018) 방법에 의하여 비정질 Si1-xCx 박막을 2.73Torr의 고정된 압력에서 RF 전력(50~300W), 증착온도(150~30$0^{\circ}C$), 주입 가스량 (SiH4:CH4)등의 조건을 다양하게 변화시켜가며 증착된 막의 특성을 평가하였다. 성장된 박막을 X-ray Photoelectron Spectroscopy(XPS), UV-VIS spectrophotometer, Ellipsometry, Atomic Force Microscopy(AFM)등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.84-84
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• 2000

수소화된 비정질 실리콘(a-Si:H)과 미세결정질 실리콘 ($\mu$c-Si:H)은 저온.건식 공정인 PECVD로 값싼 유리 기판을 사용하여 넓은 면적에 증착이 가능하다는 큰 장점으로 인해 광전소자(photovoltaic device)와 박막 트랜지스터(TFTs)등에 폭넓게 응용되어 왔으며 최근에는 nm 크기의 실리콘 결정(nc-Si)에서 가시광선 영역의 발광 현상이 발견됨에 따라 광소자로서의 특성을 제어하기 위해서는 성장 조건과 공정 변수에 따른 구조 변화에 대한 연구가 선행되어야 한다. 본 연구에서는 UHV-ECR-PECVD 법을 이용하여 H2로 희석된 SiH4로부터 a-Si:H과 $\mu$c-Si:H를 증착하였다. 그림 1은 SiH4 20sccm/H2 50sccm/25$0^{\circ}C$에서 기판의 DC bias를 변화시키면서 박막을 증착시킬 때 나타나는 박막의 구조 변화를 raman spectrum의 To phonon peak의 위치와 반가폭의 변화로 나타낸 것이다. 비정질 실리콘 박막은 DC bias를 증가시킴에 따라 무질서도가 증가하다가 어떤 critical DC bias에서 최대치를 이룬후 다시 질서도가 증가한다. 이온의 충격력에 의해 박막내에 응력이 축적되면 박막의 에너지 상태가 높아지고 이 축적된 응력이 ordering에 대한 에너지 장벽을 넘을 수 있을 만큼 커지게 되면 응력이 풀리면서 ordering이 가능해지는 것으로 생각된다. 그림 2는 수소 결합 형태의 변화이다. 박막의 무질서도가 증가할 경우 알려진 바와 같이 2000cm-1근처의 peak은 감소하고 2100cm-1 부근이 peak이 증가하는 현상을 보였다. 본 논문에서는 여러 공정 변수, 특히 DC bias에 따르는 박막의 구조 변화와 다른 성장 조건(온도, 유량비)이 critical DC bias나 결정화, 결정성 등에 미치는 영향에 대한 분석결과를 보고하고자 한다.등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다. 이것은 quinua 대체량 증가에 따른 반죽의 안정성이 저하되어 버린 것으로 생각되어진다. 더욱이 lipase를 첨가하면 반죽이 분화하는 경향이 보여졌지만 첨가량 75ppm에 있어서 상당히 비용적의 증대가 보였다. 이것은 lipase의 가수분해에 의해

• Korean Journal of Environmental Agriculture
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• v.22 no.4
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• pp.278-283
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• 2003

This study was carried out to examine the nitrogen removal rate of a subsurface-flow treatment wetland system which was constructed on floodplain of the Kwangju River from May to June 2001. Its dimensions were 29m in length, 9m in width and 0.65m in depth. A bottom layer of 45cm in depth was filled with crushed granite with about $15{\sim}30\;mm$ in diameter and a middle layer of 10cm in depth had pea pebbles with about 10 mm in diameter. An upper layer of 5 cm in depth contained course sand. Reeds (Phragmites australis) were transplanted on the surface of the system. They were dug out of natural wetlands and stems were cut at about 40 cm height from their bottom ends. Water of the Kwangju River flowed into it via a pipe by gravity flow and its effluent was funneled back into the river. The height of reed stems was 44.2 cm in July 2001 and 75.3cm in September 2001. The number of stems was increased from $80\;stems/m^2$ in July 2001 to $136\;stems/m^2$ in September 2001. Volume and water quality of inflow and outflow were analyzed from July 2001 through December 2001. Inflow and outflow averaged 40.0 and $39.2\;m^3/day$, respectively. Hydraulic detention time was about 1.5 days. Average nitrogen uptake by reeds was $69.31\;N\;mg/m^2/day$. Removal rate of $NO_3-N$, $NH_3-N$, T-N averaged 195.58, 53.65, and $628.44\;mg/m^2/day$, respectively. Changes of $NO_3-N$ and $NH_3-N$ abatement rates were closely related to those of wetland temperatures. The lower removal rate of nitrogen species compared with that of subsurface-flow wetlands operating in North America could be attributed to the initial stage of the system and inclusion of two cold months into the six-month monitoring period. Increase of standing density of reeds within a few years will develop both root zones suitable for the nitrification of ammonia and surface layer substrates beneficial to the denitrification of nitrates into nitrogen gases, which may lead to increment in the nitrogen retention rate.