• Journal of the Korean Chemical Society
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• v.53 no.4
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• pp.466-470
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.129-129
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• 2003

최근에 능동 영역 액정 표시 소자(Active Matrix Liquid Crystal Display, AMLCD)에서 고해상도와 빠른 응답속도를 요구하게 되면서부터 다결정 실리콘(poly-Si) 박막 트랜지스터(Thin Film Transistor, TFT)가 쓰이게 되었다. 그리고 일반적으로 디스플레이의 기판을 상대적으로 저가의 유리를 사용하기 때문에 저온 공정이 필수적이다. 따라서 새로운 저온 결정화 방법과 부가적으로 최근 디스플레이 개발 동향 중 하나인 대화면에 적용 가능한 공정인 금속유도 결정화 (Silicide Mediated Crystallization, SMC)가 연구되고 있다. 이 소자는 top-gated coplanar구조로 설계되었다. (그림 1)(100) 실리콘 웨이퍼위에 3000$\AA$의 열산화막을 올리고, LPCVD로 55$0^{\circ}C$에서 비정질 실리콘(a-Si:H) 박막을 550$\AA$ 증착 시켰다. 그리고 시편은 SMC 방법으로 결정화 시켜 TEM(Transmission Electron Microscopy)으로 SMC 다결정 실리콘을 분석하였다. 그 위에 TFT의 게이트 산화막을 열산화막 만큼 우수한 TEOS(Tetraethoxysilane)소스로 사용하여 실리콘 산화막을 1000$\AA$ 형성하였고 게이트는 3000$\AA$ 두께로 몰리브덴을 스퍼터링을 통하여 형성하였다. 이 다결정 실리콘은 3$\times$10^15 cm^-2의 보론(B)을 도핑시켰다. 채널, 소스, 드래인을 정의하기 위해 플라즈마 식각이 이루어 졌으며, 실리콘 산화막과 실리콘 질화막으로 passivation하고, 알루미늄으로 전극을 형성하였다 그리고 마지막에 TFT의 출력특성과 전이특성을 측정함으로써 threshold voltage, the subthreshold slope 와 the field effect mobility를 계산하였다.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.26-30
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• 2013

For the realization of high-k insulator, aluminum oxide ($Al_2O_3$) was deposited by using an oxygen ion beam assisted deposition (IBAD) during e-beam evaporation. From the thickness of the $Al_2O_3$ layer evaporated with IBAD process, it was possible to investigate the etching effect of ion beam at higher energies during e-beam evaporation. It was also possible to obtain a higher capacitance as a result of IBAD in spite of the reduced thickness of $Al_2O_3$.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.116-117
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• 2000

• 한국전기화학회:학술대회논문집
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• 2004.10a
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• pp.11-11
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.298-298
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• 2013

플라즈마 전해산화기술은 알루미늄 소재에 대해 기존의 양극 산화막, 전해 경질크롬 도금 및 플라즈마 세라믹 용사기술 등에 의해 구현할 수 없는 고기능성을 부여하여 월등히 우수한 경도, 내부식, 내마모, 전기절연, 열저항, 피로강도 등을 얻을 수 있는 획기적인 기술이다. 또한 최근 환경에 대한 관심이 점차 높아지면서 친환경적 공정과정과 경금속 소재의 제품에 내구성을 향상시킬 필요성이 높아지고 있다. 이러한 요구에 부합하는 플라즈마 전해 산화기술은 알칼리 수용액 중에서 Al, Ti, Mg 등의 표면에 산화 피막을 형성시키는 기술로써 기존의 양극산화(Anodizing)을 대체 할 수 있다. 본 연구에서는 Al6061을 이용하여 플라즈마 전해산화 공정에 사용되는 전해액의 종류 및 농도, 시간의 변화에 따른 산화 피막의 변화를 내전압 측정 및 FE-SEM, EDS, XRD를 통해 분석하였다. 전해액에 sodium hexameta phosphate과 potassium phosphate를 이용하여 phosphate 종류의 변화에 따른 피막 특성의 변화를 연구하였다. 그로인해 phosphate의 종류 및 농도, 시간 변화를 이용하여 플라즈마 전해산화공정의 산화 피막 물성 제어를 할 수 있다.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.95-101
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• 1997

Using aluminum powder with average particle size of 22.1 $\mu$m, aluminum compact made by Pressureless Powder Packing Method showed 52% green density. The activation energy of aluminum oxidation was cal-culated from the weight change of TG, and it was varied in the range of 16~64 kJ/mol. It was found from the variation of the activation energy and the observation of the microstructure that oxidation was de-pendent on the destruction of oxide film and the melt-out of aluminum. Aluminum compact was reaction-bonded at 1000~140$0^{\circ}C$ for 4~60hrs, and oxidation was dependent on temperature rather than time. Reac-tion-bonded aluminum oxide at 140$0^{\circ}C$ for 60hrs showed 92% oxidation percent. It was sintered at 1$600^{\circ}C$ for 15hrs and the sintered body showed 62% relative density.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.136-140
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• 2000

A stainless steel separator for a molten carbonate fuel cell is usually coated with aluminum diffusive layer to protect its surface against corrosion by the molten carbonate at high temperatures. In this study, a relatively simple method was devised to form the aluminum diffusive layer on a stainless steel substrate. Slurry coating of aluminum on the substrate followed by heat treatment under reducing atmosphere at $650\~800^{\circ}C$ produced the aluminum diffusive layer of $25\~80{\mu}m$ thickness. The thickness of aluminum diffusive layer increased with increasing the temperature or duration of the heat-treatment. The corrosion resistance against molten carbonate under oxidizing atmosphere was significantly improved by aluminum diffusive layer formed by the sluny painting and heat treatment method. Moreover, the sample prepared in this study showed corrosion behavior similar to the sample with aluminum diffusive layer prepared by ion vapor deposition and heat treatment.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.427-433
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• 2006

We have fabricated nanodot arrays by using phase separated (PS- b- PMMA) diblock copolymer film and anodic aluminum oxide (AAO) membrane as templates with hexagonal arrays of cylindrical microdomains perpendicular to the substrate. Pulsed laser deposition technique was used to deposit various kinds of materials including Ag, Ni, ZnO, Si:Er, and Co/Pt onto Si substrates. The size and separation of nanodots correspond to those of the templates used, The density of nanodots was estimated to be $6{\times}10^{11}/cm^2$ and $1{\times}10^{10}/cm^2$ when the diblock copolymer and AAO were used, respectively. In particular, the optical properties of ZnO and Si: Er nanodot arrays were investigated and the strong photoluminescence at 380 nm and $1.54{\mu}m$ was observed from ZnO and Si:Er nanodot arrays, respectively.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.400-406
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• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analyzed with increasing annealing temperature($400{\sim}800^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to $SiO_{2}$ and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analyzed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater, active area was smaller size, Pt micro heater had better thermal characteristics. The temperature of Pt micro heater with active area, $200{\mu}m{\times}200{\mu}m$ was up to $400^{\circ}C$ with 1.5watts of the heating power.