• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.67-71
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• 2013

$FeCl_3$ has been used as an etchant for metal etching such as Fe, Cu, and Al. In the process of metal etching, $Fe^{3+}$ is reducted to $Fe^{2+}$ and the etching rate becomes slow and etching efficiency decreased. Waste $FeCl_3$ etchant needs to be regenerated because of its toxicity and treatment cost. In this work, HCl was initially mixed with the waste $FeCl_3$ and then, strong oxidants, such as $O_2$ and $H_2O_2$, were added into the mixed solution to regenerate the waste etchant. During successive etching and regeneration processes, oxygen-reduction potential (ORP) was continuously measured and the relationship between ORP and etching capability was investigated. Regenerated etchant using a two vol% HCl of the total etchant volume and a very small amount of $H_2O_2$ was very effective in recovering etching capability. During the etching-regeneration process, the same oxygen-reduction potential variation cannot be repeated every cycle since concentrations of $Fe^{2+}$ and $Fe^{3+}$ ions were continuously changed. It suggested that the control of etching-regeneration process based on the etching time becomes more efficient than that of the process based on oxygen reduction potential changes.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.97-97
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• 1999

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• v.11 no.2
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• pp.227-230
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• 2006

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.193-193
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• 2015

도금공정에 있어서 전처리는 제품품질을 확보하는데 중요한 단계이다. 전처리 공정의 주요인자중 처리액의 온도, 처리시간, 교반력, 오염도를 개선함으로써 제품의 산화막 및 오염물질을 효과적으로 제거할 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.151-151
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• 2015

• Applied Chemistry for Engineering
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• v.9 no.6
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• pp.846-851
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• 1998

An experimental research on the preparation of zinc oxide fine particles in w/o emulsions was conducted. Precipitation solutions were zinc nitrate aqueous solutions with hexamethylenetetramine(HMTA) as precipitant. The precipitation solutions formed stable w/o emulsions with kerosine in the presence of Span 80. Homogeneous precipitation reaction occurred in the w/o emulsion after the resultant w/o emulsion was heated above the decomposition temperature of HMTA and zinc oxide particles were precipitated. In some case, zinc oxide particles of bi-modal distribution were obtained. However, zinc oxide fine particles of narrow particle size distribution could be obtained, even when the initial zinc concentration of precipitation solution and the conversion to zinc oxide are both higher that those in bulk homogeneous precipitation.

• Korean Journal of Materials Research
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• v.5 no.4
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• pp.397-404
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• 1995

반도체 세정공정에서 염기성 세정액(SCI, Standard cleaning 1, $NH_{4}$OH + $H_{2}$O_{2}$ + $H_{2}$O)은 공정상 발생되는 여러 오염물 중 파티클의 제거를 위해 널리 사용되고 있는데, SCI 조성중 $NH_{4}$OH양에 따라 세정 중 실리콘의 식각속도를 증가시킨다. 이 연구에서는 SCI 세정이 CZ(Czochralski)와 에피 실리콘 기판 표면에 미치는 영향을 단순세정과 연속적인 산화-HF 식각-SCI 세정공정을 통해 관찰되었다. CZ와 에피 기판을 8$0^{\circ}C$의 1 : 2 : 10과 1 : 1 : 5 SCI 용액에서 60분까지 단순 세정을 했을 때 laser particle scanner와 KLA사의 웨이퍼 검색장치로 측정된 결함의 수는 세정시간에 따라 변화를 보이지 않았다. 그러나 CZ와 에피 기판을 10분간 SCI 세정후 90$0^{\circ}C$에서 산화 HF식각공정을 4번까지 반복하였을 때 에피 기판 표면의 결함수는 감소하는 반면에 CZ기판에서는 직선적으로 증가하였다. 반복적인 산화-HF 식각-XCI 세정공정을 통해 생성된 CZ기판 표면의 결함은 크기가 0.7$\mu$m 이하의 pit과 같은 형상을 보여주었다. 이들 결함은 열처리 중 CZ 기판내와 표면에 산화 석출물들이 형성, 반복적인 HF 식각-SCI 세정공정을 통해 다른 부위에 비해 식각이 빨리 일어나 표면에 생성되는 것으로 여기어 진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.122.2-122.2
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• 2013

플라즈마 전해산화(plasma electrolytic oxidation) 기술을 이용하여 제작한 산화 피막은 피막의 하층부(기지 금속과 접해 있는 부분)는 ${\alpha}$-phase의 산화물이 대부분을 이루고 있으며, 기지 금속과의 접착성도 뛰어나다. 하지만 피막의 표면이 거칠고, 다공성을 띄는 특징을 보인다. 본 연구에서는 피막의 거칠기와 다공성을 제어하기 위한 방법으로 전해액에 포함된 불순물(Si, P 등) 조성비의 변화에 초점을 맞췄으며, 불순물(Si, P 등)의 조성비를 변화시켜 가면서 실험을 진행하였다. 실험에는 60 Hz, 35 kW(700 V, 50 A)의 power supply가 사용되었다. 또한, 실험의 결과로 제작된 시편의 내전압(10 V/s), 내플라즈마(200 W, 10 min, Ar 5 sccm, 200 mTorr), 내화학성(HCl 36.46 wt%, 120 min) 테스트를 진행하였으며, 실험 결과를 바탕으로 ${\phi}300$ 대면적 시편의 제작도 완료하였다.

• Journal of Wetlands Research
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• v.17 no.1
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• pp.11-18
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• 2015

As the seriousness of water pollution resulted from nitrogen is being magnified, research has been conducted to reduce nitrogen in sewage as well as wastewater. Particularly research on innovative nitrogen removal methods that are based on the reaction of nitritation and are economically feasible and eco-friendly has been receiving attention. However, research on the applicability and efficiency of the methods based on the reaction of nitritation has not been completely done yet. Accordingly, the current study has analyzed the characteristics of sewage flowing into municipal wastewater treatment plants, primary clarifier supernatant, recycled water, and livestock wastewater and also operated a laboratory-level reactor. The result shows that recycled water and livestock wastewater contain higher-concentration nitrogen than other kinds of sewage, so they increase nitrogen loading in the water treatment line. And the result of operating a reactor shows that because of ammonium nitrogen low concentration, sewage and primary clarifier supernatant do not induce the reaction of nitritation. Also, there exist differences in the conditions of retention time inducing the reaction of nitritation by the types of sewage, and this seems to be attributed to organic compound and ammonium nitrogen concentration. Among the kinds of sewage inducing the reaction of nitritation, anaerobic digester supernatant indicates the highest efficiency.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.7-19
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• 1981

Anodization method is utilized in order to measure diffusion profiles of boron and arsenic in silicon. The solution used for silicon anodization is Ethylene glycol +KNO3(0.04N), The thickness of silicon which is consumed by a single 200V anodization is 460$\pm$40A regardless of wafer type. The profiles of boron and arsenic in silicon after predeposition process are investigated. The diffusion coefficients of both dopants depending on impurity concentration are extrated from these profiles. The base pull-in effect has been observed in prototype npn transistors with arsenic doped emitter.