• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.505-508
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• 2001

Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.3%, and the removal effect of latent charge by using light erase method was its 95.5%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Journal of the Korean Society of Radiology
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• v.3 no.4
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• pp.35-38
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• 2009

Flat-panel x-ray detectors using a phosphor and photoconductor material have been used for application in various medical modalities. In this study, the monte carlo simulation, optical and x-ray response characteristics were investigated in the conversion structure obtained by a columnar CsI:Na scintillation layer with a photosensitive amorphous selenium layer. Firstly, from the measurement of luminescent spectrum of CsI:Na and absorption spectrum of a-Se layer, the signal conversion characteristics are analysed. And also, the x-ray sensitivity is measured and compared with conventional a-Se($500{\mu}m$) as a function of electrical field. From the experimental result, the x-ray sensitivities of the CsI:Na($180{\mu}m$)/a-Se($30{\mu}m$) detector and the a-Se($500{\mu}m$) detector were $7.31nC/mR-cm^{2}$ and $3.95nC/mR-cm^{2}$at an electric field of $10V/{\mu}m$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.849-852
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• 2002

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.146-146
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• 2009

최근에 광도전체와 형광체를 기반으로 평판형 디지털 방사선 검출기의 상업적 발전가능성에 많은 관심을 가지고 있다. 본 연구는 기존의 직접변환방식에 널리 사용되었던 비정질 셀레늄 (amorphous selenium) 기반의 디지털 방사선 검출기보다 높은 전기적신호 및 동작특성을 가지는 물질층을 제작하기 위해 High Purity (99.99%)의 상용화된 $PbI_2$를 특수용매에 담가두었다가 약 1시간동안 Biology 초음파 처리한 후 농축기를 사용하여 건조된 $PbI_2$를 3Roll-milling을 사용하여 미세크기의 Powder를 얻어내었다. 합성된 $PbI_2$ Powder를 PIB(Particle-in-Binder)법을 이용하여 전도성을 가진 ITO(Indium-tin-oxide)코팅된 유리판에 제작된 필름의 상부에 Magnetron sputtering system 을 사용하여 전극을 $1cm{\times}1cm$의 크기로 증착하였다. I-V 테스트를 통하여 X선 조사시 $PbI_2$필름의 Sensitivity, Dark current, SNR(signal-to-noise ratio)을 측정하여 필름의 전기적 검출 특성을 정량적으로 평가하였고 SEM(scanning electron microscope)을 통하여 입자의 크기를 관찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.501-504
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• 2001

We used time-of-flight method to analyze transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-flight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 400 ${\mu}m$ thickness on coming glass using thermoevaporation method and built Au electrode with 300nm, $2{\varphi}$ on both sides of a-Se, As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and Drift mobility was each $0.00174 cm^{2}/V{\cdot}s$, $0.04584cm^{2}/V{\cdot}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.375-378
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• 2002

There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.501-504
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• 2001

We used time-of-flight method to analyse transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-fight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 470 ${\mu}{\textrm}{m}$ thickness on corning glass using thermoevaporation method and built Au electrode with 300nm, 2$\phi$ on both sides of a-Se. As a result of this experiment, electron and hole transit time was each 229.17 $\mu$s and 8.737 $\mu$s at 10V/${\mu}{\textrm}{m}$ electric field and Drift mobility was each 0.00174 $\textrm{cm}^2$/V.s, 0.04584 $\textrm{cm}^2$/V.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.384-387
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• 2003

In this paper, the evaluation of image quality was performed for digital radiography which is developing in using amorphous selenium as a photoconductor material for the purpose of offering basic research data and measurement technique about Medical Imaging Quality. So Modulation Transfer Function as a main factor of imaging quality evaluation was investigated by slit method. For measurement of MTF, Nuclear associates. 07-624 Slit camera image was obtained to study the variation of MTF corresponding to changing spatial frequency. And Presampling MTF was estimated by slit camera image with $10\;{\mu}m$ width at Digital Radiography. In this study, the obtained data demonstrates that the clinical value of a direct conversion type digital radiation detector using the amorphous selenium, which is being developed by domestic technology.