• Journal of the Korean Association of Geographic Information Studies
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• v.26 no.4
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• pp.97-115
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• 2023

In recent years, the structure of the population has been changing rapidly, with a declining birthrate and aging population, and the inequality of population distribution is expanding. At this point, changes in population estimation methods are required, and more accurate estimates are needed at the subregional level. This study aims to estimate the population in 2040 at the 500m grid level by applying an explainable machine learning to Busan in order to respond to this need for a change in population estimation method. Comparing the results of population estimation by applying the explainable machine learning and the cohort component method, we found that the machine learning produces lower errors and is more applicable to estimating areas with large population changes. This is because machine learning can account for a combination of variables that are likely to affect demographic change. Overestimated population values in a declining population period are likely to cause problems in urban planning, such as inefficiency of investment and overinvestment in certain sectors, resulting in a decrease in quality in other sectors. Underestimated population values can also accelerate the shrinkage of cities and reduce the quality of life, so there is a need to develop appropriate population estimation methods and alternatives.

• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.377-382
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• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

• Journal of Navigation and Port Research
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• v.34 no.1
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• pp.51-57
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• 2010

When estimating the calmness in a harbor, it is important that diffraction and reflection of irregular waves should be exactly calculated. The basic equation of the numerical model in this study was used Mild-slope equation, which has the advantage of which non-linearity with great influence for the wave behavior can be considered, and a triangular mesh was generated by using finite element method. So as to verify the nonlinear effects, the results of the numerical model developed in this study are compared with the experimental and numerical results by other researchers. As a result, it is shown that the results in case of considering nonlinear wave are more exact for wave analysis than in case of not considering nonlinear wave. In order to apply this model, wave height distributions in Jumunjin fishery port installed a seawater-exchange breakwater are computed. From the results of this numerical analysis, when abnormal waves are intruded through the seawater-exchange breakwater, the results of the wave height distributions in the harbor are highly presented. Therefore, in order to get wave height low in the harbor, it is considered that the facility with the ability to protect the inflow of abnormal waves is needed.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.25 no.5
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• pp.335-347
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• 2013

In February 2008, high storm waves due to a developed atmospheric low pressure system propagating from the west off Hokkaido, Japan, to the south and southwest throughout the East Sea (ES) caused extensive damages along the central coast of Japan and along the east coast of Korea. This study consists of two parts. In the first part, we estimate extreme storm wave characteristics in the Toyama Bay where heavy coastal damages occurred, using a non-hydrostatic meteorological model and a spectral wave model by considering the extreme conditions for two factors for wind wave growth, such as wind intensity and duration. The estimated extreme significant wave height and corresponding wave period were 6.78 m and 18.28 sec, respectively, at the Fushiki Toyama. In the second part, we perform numerical experiments on wave-structure interaction in the Fushiki Port, Toyama Bay, where the long North-Breakwater was heavily damaged by the storm waves in February 2008. The experiments are conducted using a non-linear shallow-water equation model with adaptive mesh refinement (AMR) and wet-dry scheme. The estimated extreme storm waves of 6.78 m and 18.28 sec are used for incident wave profile. The results show that the Fushiki Port would be overtopped and flooded by extreme storm waves if the North-Breakwater does not function properly after being damaged. Also the storm waves would overtop seawalls and sidewalls of the Manyou Pier behind the North-Breakwater. The results also depict that refined meshes by AMR method with wet-dry scheme applied capture the coastline and coastal structure well while keeping the computational load efficiently.

• Journal of the Korean Electrochemical Society
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• v.6 no.1
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• pp.1-5
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• 2003

[ $LiNi_{1-x}Co_xO_2\;(x=0.0\~1.0)$ ] powders were synthesized by citrate method, and their crystal structures and electrochemical performance as the cathode material in Li secondary batteries were analyzed. X-ray diffraction analysis revealed that all the samples carry a single phase regardless of the Co substitution. The results of Rietveld refinement suggested that the crystal structure of solid solutions varies according to the Co substitution. When the Co substitution is low $(x=0.3\~0.5)$, the solid solutions carry a cubic-like structure with a relatively small value in the ratio of lattice parameters (c/a). The solid solutions made with a higher Co substitution (x=0.7), however, exhibit a layered structure with a higher c/a ratio. This difference was also observed in the electrochemical voltage spectroscopy (EVS) profiles, whereby the Co component in scarcely substituted materials shows a charging reaction at $3.7V\;(vs.\;Li/Li^+)$, but in the heavily substituted ones at 3.92V.

• Journal of Navigation and Port Research
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• v.30 no.10 s.116
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• pp.869-875
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• 2006

This paper presents the method for developing an optimum hull form with minimum wave resistance using SQP(sequential quadratic programming) as an optimization technique. The wave resistance is evaluated by a Rankine source panel method with non-linear free surface conditions and the ITTC 1957 friction line is used to predict the frictional resistance coefficient. The geometry of the hull surface is represented and modified using NURBS(Non-Uniform Rational B-Spline) surface patches. To verity the validity of the developed program the numerical calculations for Wigley hull and Series 60( $C_B=0.6$) hull have been performed and the results obtained by the numerical calculations have been compared with the original hulls.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.1
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• pp.22-31
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• 1997

The grain boundary etching method as a method for assessing degradation of structural materials has received much attention because it is simple, inexpensive and easy to apply to real components. In this study, the effectiveness of the method is verified by successfully applying the technique to in-service components of aged fossil power plants such as main steam pipes, boiler headers an turbine rotors. A new degradation parameter, intersecting number ratio (N$_{1}$/N$_{0}$), is employed. The intersecting number ratio (N$_{1}$/N$_{0}$) is defined as the ratio of intersection number (N$_{1}$) obtained from 5-minute picric acid etched surface to the number (N$_{0}$) obtained from nital etched surface. Two kinds of test materials, 2.25Cr-1Mo steel and 1Cr-1Mo-0.25V steel, were artificially thermal-aged at 630.deg. C in different levels of degradation., (N$_{1}$/N$_{0}$) were measured. And, correlations between the measured values and LMP values calculated from aging temperature and aging time were sought. To check the validity of the correlations obtained in laboratory, similar data were measured from service components in four old Korean fossil power plants. These on-site measurement data were in good correlation with those obtained in the laboratory.oratory.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.6
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• pp.2037-2047
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• 1991

Strength is not simply a single given value but rather is a statistical one with certain distribution functions. This is because it is affected by many unknown factors such as size, shape, stress distribution, and combined stresses. In this study, a model of loss probability is proposed in view of the fact that one of the fundamental configuration of nature is hexagonal, for example, the shapes of lattice unit, grain, and so on. The model sues the concept of loss of certain element in place of Jayatilaka-Trustrum's length and angle of cracks. Using this model, the loss probability due to each loss of certain elements is obtained. Then, the maximum principal stress is calculated by the finite element method at the centroid of the elements under the tensile load for the 4,095 models of analysis. Finally, the failure probability of the brittle materials is obtained by multiplying the loss probability by the ratio of the maximum principal stress to theoretical tensile strength. Comparison of the result of the Jayatilaka-Trustrum's model and the proposed model shows that the failure probabilities by the two methods are in good agreement. Further, it is shown that the parametric relationship of semi-crack lengths for various degrees of birittleness can be determined. Therefore, the analysis of the failure probability suing the proposed model is shown to be promising as a new method for the study of the failure probability of birttle materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.340-341
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• 2013

양자점(Quantum dots; QDs)은 단전자 트랜지스터, 레이저, 발광다이오드, 적외선 검출기와 같은 고효율 광전소자 응용을 위해 활발한 연구가 진행되고 있다. II-VI 족 화합물 반도체는 III-V 족 화합물 반도체와 비교했을 때 더 큰 엑시톤 결합에너지(exciton binding energy)를 가지는 우수한 특성을 보이고 있으며 이러한 성질을 가지는 II-VI 족 화합물 반도체 중에서도 넓은 에너지 갭을 가지는 CdTe 양자점은 녹색 영역대의 광전자 소자로서 활용되고 있다. 기존의 CdTe/ZnTe 양자점을 성장하기 위해 ZnTe와 격자부정합이 적은 GaAs 기판을 이용한 연구가 주를 이룬 반면 Si기판을 이용한 연구는 미흡하다. 하지만 Si 기판은 GaAs 기판에 비해 값이 싸고, 여러 분야에 응용이 가능하며 대량생산이 가능하다는 이점을 가지고 있어 초고속, 초고효율 반도체 광전소자의 제작을 가능케 할 것으로 기대된다. 또한 양자점의 고효율 광전소자에 응용을 위해서는 Si 기판 위에 양자점의 크기를 효율적으로 조절하는 연구 뿐 아니라 양자점의 크기에 따른 운반자 동역학에 대한 연구도 중요하다. 본 연구에선 분자선 에피 성장법(Molecular Beam Epitaxy; MBE)과 원자층 교대 성장법(Atomic Layer Epitaxy; ALE)을 이용하여 Si 기판 위에 성장한 CdTe/ZnTe 양자점의 크기에 따른 광학적 특성을 연구하였다. 저온 광 루미네센스(PhotoLuminescence; PL) 측정 결과 양자점의 크기가 증가함에 따라 더 낮은 에너지영역으로 피크가 이동하는 것을 확인하였다. 그리고 온도 의존 광루미네센스 측정 결과 양자점의 크기가 증가함에 따라 열적 활성화 에너지가 증가하는 것을 관찰하였는데, 이는 양자점의 운반자 구속효과가 증가하였기 때문이다. 또한 시분해 광루미네센스 측정 결과 CdTe/ZnTe 양자점의 크기가 증가함에 따라 소멸 시간이 긴 값을 갖는 것을 관찰하였는데, 이는 양자점의 크기가 증가함에 따라 엑시톤 진동 세기가 감소하였기 때문이다. 이와 같은 결과 Si 기판 위에 성장한 CdTe/ZnTe 양자점의 크기에 따른 열적 활성화 에너지와 운반자 동역학에 대해 이해 할 수 있었다.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.