• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.923-929
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• 2006

Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.651-654
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• 1998

The layered basic zinc p-toluenesulfonates has been directly synthesized by the surface modification. The chemical formula of layered basic zinc p-toluenesulfonate is determined by CHNS and TG-DTA. From the X-ray diffraction data and the guest size, the orientation of the p-toluenesulfonate onto the zinc hydroxide layer is determined. The molecular plane of the p-toluenesulfonate lies perpendicular to the zinc hydroxide layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.36-41
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• 1998

Intercalation compounds of alkyl sulfonates into layered double hydroxides (LDH) have been directly synthesized. From the X-ray diffraction data and the alkyl sulfonates size, the orientation of the intercalated alkyl sulfonate into the layered double hydroxide was determined. The intercalated alkyl sulfonate is arranged with molecular chain perpendicular to the hydroxide layer with an antiparallel pattern.

• Korean Journal of Microbiology
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• v.20 no.4
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• pp.183-188
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• 1982

The neurotoxin of Clostridium botulinum type B was purified from a liquid culture. The purification steps consist of ammonium sulfate precipitation of whole culture, treatment of Polymin P(0.15%, v/v), gel filtration on Sephadex G-100 at pH5.6 and DEAE-Sephadex charomatography at pH8.0. The procedure recovered 17% of the toxin assayed in the starting culture. The toxin was homogeneous by sodium dodecyl sulfate(SDS)-polyacrylamide gel electrophoresis and had a molecular weight of 163, 000. Subunits of 106, 000 and 56, 000 molecular weight were found when purified toxin was treated with a disulfide-reducing agent and electro phoresed on SDS-polyacrylamide gels.

• 전기의세계
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• v.24 no.6
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• pp.50-55
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• 1975

PE(polyethlene)가 절연재료로서 지니는 특징은 (1)전기절연성이 크고 내전압이 높다. (2)무극성분자 구조이기 때문에 특히 고주파유전특성이 우수하다. (3)내수, 내습성이 있다. (4)경량이며 비교적 기계적 특성이 좋고 가격도 저렴한 편이다. 등등이라 하겠다. (1)(3)(4)등과 같은 특징을 중시하여 전력 cable의 절연피복으로 사용되었으며 (2)의 특징에 유의하여서는 통신선의 피복재로 애용되고 있다. 그러나 PE의 단점은 일반 타수지와 마찬가지로 부열성이 약한 점이다 .실로 저밀도 PE는 110.deg.C, 고밀도 PE의 경우는 125.deg.C부근에서 녹아 흐르기 시작한다. 이와 같은 단점을 개선하는 방법으로 분자쇄간을 가교시켜 3차원적 망상 구조로 만들어 고온에서의 분자쇄유동을 억제함으로 내열성을 높이는 기술이 개발되어 왔으며 이를 위한 가교방법은 방사선조사에 의한 물리적 방법과 과산화물을 사용하는 화학적 방법으로 대별할 수 있다. 이와 같이 가교된 PE는 다만 열 특성만이 향상될 뿐더러, 전기적, 기계적 특성에도 변화를 초래하기 때문에 여기에서 실용적 견지에 입각하여 가교포리에티렌의 물성 및 이것을 중심으로한 가교 방법 일반에 대한 개요를 소개하고저 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.467-471
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• 2000

The thermal annealing effect of $Zn_{0.9}Cd_{0.1}$ single quantum-well structures grown by molecular beam epitaxy is investigated. As the results of before and after rapid thermal annealed samples a red shift of E1-HH1 peak by Cd interdiffusion during thermal annealing of ZnCeSe/ZnSe sample was observed. In the case of annealed sample over $450^{\circ}C$ donor and acceptor impurities related peaks were observed which seems to be due to a diffusion of Ga and As from GaAs substrate. And also interdiffusion phenomena is idenified by the results of DCX measurements and which are consisten with the PL measurements.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.80-86
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• 1998

Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1037-1041
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• 2004

공액계 유기가교로서 butadiene을 사용한 이핵 유기금속착체를 합성하였고, 합성된 유기금속착체 화합물에 대한 구조적 특징과 두 금속간의 전기화학적 특성에 관한 연구를 수행하였다. $[Cp*Fe(CO)_2]_2-({\mu}-CH=CH-CH=CH)$ 착체는 $Cp*(CO)_2$FeK와 cis-3,4-dichlorocyclobutene과의 반응으로 합성하였고, 이 착체에 결합된 CO기는 UV 광반응하에서 $PPh_3$로 치환시켜 $[Cp*Fe(CO(PPh)_3]_2-({\mu}-CH=CH-CH=CH)$를 합성하였다. 합성된 착체에 대한 전기화학적 특성을 파악하기 위해 CV 실험결과, 전위차 ${\Delta}E^{\circ}=0.575{\sim}0.605$ V이고 $K_c$값은 $109{\sim}1010$으로 매우 큰 값을 얻음으로서 두 금속간의 상호작용이 탄화수소사슬을 통해 활발하게 이루어지고 있음을 알수가 있었다.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.289-290
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• 2006

We report a study of Zn(S)Se/GaAs heterojunction solar cells grown by molecular beam epitaxy (MBE). Zn(S)Se/GaAs heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED). Structural and electrical properties were investigated with double crystal X-ray diffraction and current-voltage characteristics, respectively. The fabricated $n-ZnS_{0.07}Se_{0.93}/p-GaAs$ solar cell (SC #2) exhibited open circuit voltage($V_{oc}$) of 0.37 V, short circuit current($I_{sc}$) of $1.7{\times}10^{-2}$ mA, fill factor of 0.62 and conversion efficiency of 7.8 % under 38.5 $mW/cm^2$ illumination.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.142-148
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• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.