• Tuberculosis and Respiratory Diseases
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• v.46 no.4
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• pp.466-472
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• 1999

폐결핵의 진단은 주로 환자의 증상, 흉부 X-선, 객담의 균도말 및 배양검사에 의존하며 이는 과거와 크게 차이가 없으나 최근에는 좀더 효율적인 객담배출을 위한 방법, 분자생물학적 기법을 동원한 결핵균의 진단 및 결핵균항원 또는 항체를 혈액 등에서 측정하는 방법 등이 개발되어 결핵의 진단 율을 높이는데 기여하고 있다.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.52.1-52
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.128-129
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• 1994

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.371-376
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy (MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of $800^{\circ}C$ in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and $1{\mu}m$, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is ($2{\times}4$). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.25-35
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• 1993

Tetra-tert-butyl-tetrapropionycalix (4) arena (C56H7208) is Triclinic, space group Pl, with a=13.664(5), b=17.585(5), c=12.863(2)A, a=109.33(2), B=111.97(2), γ=76.45(3) ˚, Z=2, V=2684.08A3, D, =1.152g/cm3, Dm=1.15g/cm3. The intensity data were collected on an Enraf-Nonius CAD-4 Diffractometer with a graphite monochromated Mo-Ka radiation. The structure was solved by direct methods and refined by leastsquares methods. The final R factor was 0.084 for 2561 observed reflections. The configuration of the molecule from the X-ray crystallographic investigation has the partial cone conformation, three tort-butylphenyls are down and a tort-butylphenyl is up. Three propionyloxy groups direct toward the exterior of the macrocycle cavity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1005-1009
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• 2006

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.132-137
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• 1997

The crystal structure of N,N'-di-tert-butoxycabonyl-2,7-diazabicyclo[3.3.0]oct-4-ene has been determined from single crystal x-ray diffraction study; C16H26N2O4, Triclinic, P1, a=11.119(1) Å, b=13.638(1) Å, c=6.214(1) Å, α=92.14(1)°, β=103.49(1)°, γ=73.35(1)°, V=877.4(2)Å3, T=293(2)K, Z=2, CuKα(λ=1.5418Å). The structure was solved by direct method and refined by full-matrix least squares to a final R=5.38% for 2389 unique observed F0>4σ(F0) reflections and 225 parameters.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.138-143
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• 1997

The crystal structure of isoimperatorin, f-[(3-methyl-2-butenyl)oxy]-7H-furo[3,2-g][1] benzopyran-7-one, has been determined from single crystal x-ray diffraction study; C16H14O4, Monoclinic, P21/c, a=8.865(1) Å, b=9.331(1) Å, c=16.156(1) Å, β=98.12(1)', V=1322.9(2) Å3, T=293(2)K, z=4, Cu Kα(λ=1.5418 Å). The structure was solved by direct method and refined by full-matrix least squares to a final R=5.72% for 1922 unique observed Fo>4o(F0) reflections and 182 parameters.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.80-87
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• 1995

The structure of Tetrapropionyloxycalix[4]arene(C40H40O8) has been studied by X-ray diffraction method. The crystal is monoclinic a=13.921(3), b=13.552(2), c=19.840(5)Å, β=110.38(2)°, Z=4 T=297K, Dc=1.23gcm-3, F(000)=1376, Systematic absences : hkl none, h0l : h+l=2n, 0k0: k=2n define space group P21/n. The structure was solved by direct method and refined by full-matrix least-squares methods to final R of 0.06 for 2514 observed reflections. The macrocycle exists in partial cone conformation. Three propionyl groups direct toward the exterior of the macrocycle cavity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.167-168
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• 2006

High quality 3D-heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources ($As_2$, $As_4$) were varied to calibrate the selective area growth conditions. Scanning micro-photoluminescence ($\mu$-PL) measurements and following analysis revealed that the gradually (adiabatically) coupled 2DEG-1D-1DEG field effect transistor (FET) system was realized. This 3D-heterostructure is very promising for the realization of the meso-scopic electronic devices and circuits since it makes it possible to form direct ohmic contact to the (quasi) 1DEG.