• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.105-108
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• 1989

For the purpose of fabricating of LB Ultra Thin Films. (N-docosyl pyridinium)-TCNQ(l: 1) Complex is synthesized. This specimen is verified by U.V. I.R and elemental analyzer. In fabricated LB films with this, as a measurements of electrical conduction characteristics in perpendicular direction, this films have characteristics of insulator(about $10^{-14}S/cm$). And negative resistance phenomena are observed in I-V characteristics of this films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.4
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• pp.74-79
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• 1973

The Impcdance Matching Condition for maximum power out-pilt cf an Impact oscillator is calculated using the Van der pol's equation. From this calculation, it is found that the load impedance of the oscillator must be one half of the diode impedance for the maximum power output. To get an experimental proof for this result, tole impedance of the Impatt-diode was measured and accordingly the microwave oscillator designed and fabricated. The data obtaiped from the experiments agree fairly closely with the theoretical values.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.45-49
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• 1983

The four-layered(metal/insulator/n epi-layer/p+) controlled inversion devices have been fabricated. The I-V curve showed two characteristic states―an On state and an OFF state which were separated by a negative resistance region. The switching voltage and the holding voltage were about 5.0V and 2.5V, respectively. The switching voltage of the device was decreased by photo illumination while the holding voltage remained unaffected.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.218-221
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• 2001

In this paper, High Q Inductor using negative resistance circuit and the ceramic inductor was designed and fabricated at 2GHz. It was Improved the inductor of Q=90 using a inductor with Q=30 added to negative resistance circuit at 2GHz. As a result, at the bias condition of 3V and 16mA, the output power and phase noise in the operation frequency 2.01GHz are 5dBm and -115.34dBc/Hz at 100kHz offset from carrier, respectively. Phase noise was improved -10dBc/Hz at 100kHz offset compared to only using ceremic inductor.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.3 s.18
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• pp.174-183
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• 2004

In this paper, the performance improvement and modeling of small onboard generator were described. As the characteristics of the field coil which are a major parameters of generator were improved, the system bandwidth could be increased, therefore the generator could also be satisfied with fast characteristic loads. Established the brief control model of the generator, it could be possible to do the analysis of generator performance, and improve the operational stability of the generator system using the control model.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.239-241
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• 2006

본 논문에서는 Liquid crystal display (LCD) Backlight module중에 Cold cathode fluorescent lamp (CCFL)를 포함한 인버터가 가지고 있는 기생 용량 측정 방법을 고안하였다. CCFL의 부성 저항 특성을 고려하여 램프의 정적 저항 성분을 일정하게 유지시키고 입력 전압 대 출력 전압의 비 중 최대 Gain을 갖는 주파수를 찾아내 기생 용량을 계산하는 Algorithm을 완성하였다. 시뮬레이션과 실험 결과를 통해 비교 검증함으로써 측정 방법의 유효성을 입증하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.240-241
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• 2005

비 직선적 정(+) 저항온도계수 특성을 갖는 PTC thermistor는 전이온도(큐리점) 부근에서 온도변화에 대하여 극히 큰 저항 값의 변화를 나타내는 산화물계반도체 저항기(또는 발열체)로써, 일반적으로 반도체의 온도-저항 특성과 같이 상온영역에서 온도의 상승과 함께 부성저항 특성을 나타내다가 온도가 점점 증가하여 큐리점 부근에 도달하면 저항이 급격히 증가하는 독특한 특성을 갖는다. Perovskite 구조의 $BaTiO_3$를 주성분으로 미량의 Dopant를 첨가하여 도전성을 갖게 한 N형 반도체의 일종으로 저항-온도 특성 전류-전압 특성, 전류감쇄 특성 등을 이용하여 과전류 보호회로, 히터, TV 소자회로(degausser), 모터기동회로, 온도센서, 정온발열기기 등으로 널리 사용된다. 본 연구는 큐리점 부근의 급격한 저항변화 현상과 결정입계의 전위장벽 형성 및 그에 따른 정온발열 기능의 상관성으로부터 그 응용성을 조사하였다.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1572-1574
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• 2002

In this paper, we discuss the electrical properties of self-assembled (2'-amino-4,4-di(ethynylp henyl)-5'-nitro-1-(thioacetyl)benzene), which has been well known as a conducting molecule having possible application to molecular level NDR device. The phenomenon of negative differential resi(NDR) is characterized by decreasing current th a junction at increasing voltage, also fabricatio MIM-type molecular electronic device and the Molecular Level Using Scanning Tunneling Microscopy.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.2
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• pp.53-58
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• 2004

In this paper, the low-phase dual-band VCO, by adding switching circuit with PIN diode at feedback loop of the oscillation part having negative-resistance, is realized. In order to reduce the phase noise of the VCO, PBG structure applied to the ground plane of the resonator. When applying for PBG structure, output power is -9.17㏈m and phase noise is -102㏈c/Hz at 5.25㎓, output power is -5.17㏈m and phase noise is -101㏈c/Hz at 1.8㎓, respectively.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.86-88
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• 2004

정공주입 버퍼층(PTFE)두께에 변화에 따른 유기발광소자 전압-전류-휘도 효율을 측정한 결과 ITO/PTFE/Al 구조에서 두께가 증가하면 전류 밀도 및 전압이 증가하며, 두께가 0.7 (nm)일 때 부성 저항 영역이 나타났었고, ITO/PTFE/NPB/$Alq_3$/Al 구조에서 두께가 1.0 [nm]에서는 가장 좋은 휘도와 효율을 나타났었다. 두께가 증가하면 이것은 PTFE 내의 정공의 이동을 어렵게 하기 때문에 효율이 감소하는 것으로 판단된다. 그래서 적당한 PTFE 두께만이 가장 좋은 휘도와 효율을 얻을 수가 있다.