• Journal of the Korean Society for Precision Engineering
• /
• v.27 no.7
• /
• pp.7-12
• /
• 2010

In this paper, chip-on-glass(COG) interconnection with anisotropic conductive film(ACF) using lateral thermosonic bonding technology is considered. In general, thermo-compression bonding which is used in practice for flip-chip bonding suffers from the low productivity due to the long bonding time. It will be shown that the bonding time can be improved by using lateral thermosonic bonding in which lateral ultrasonic vibration together with thermo-compression is utilized. By measuring the internal temperature of ACF, the fast curing of ACF thanks to lateral ultrasonic vibration will be verified. Moreover, to prove the reliability of the lateral thermosonic bonding, observation of pressured mark by conductive particles, shear test, and water absorption test will be conducted.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.3
• /
• pp.649-657
• /
• 2008

This paper describes the optimized output performances such as output power and the third order intermodulation in GaN high power transistor packages which consist of chip die, chip capacitors, and wire bonding. The optimized output power according to wire bonding techniques, and third order intermodulation performances according to wire bonding and bias conditions are discussed. In addition, it is shown through the nonlinear simulation that how the output performances are sensitive to the inductance values which are realized by wire bonding for matching network in the limited package area.

• Journal of the Korean Academy of Esthetic Dentistry
• /
• v.24 no.2
• /
• pp.122-133
• /
• 2015

The requirements for the successful treatment of all-ceramic restorations are not so different from the ones of conventional restorations. "The provisional restoration followed by an adequate tooth reduction" and "the accurately fitting prostheses with corresponding to final impression" can be the examples of them. Nevertheless, the one which all-ceramic restorations are distinguished from conventional restorations is the additional procedure of so called "bonding". In addition to the application of resin cement between "inner surface of restoration and outer surface of abutment", bonding technology can be also applied to the treatment process of "Post and Core" in particular if the abutments are non-vital teeth. Core build-up for all-ceramic crown is conducted with fiber post and tooth colored composite by considering the properties of the restorations transmitting light. We know well that a vital abutment is easier than a non-vital one to get the targeted goals for clinical success in connection with esthetics and structure. The creation of "Post and Core" with bonding technique is a decisive factor for a long-term success if the abutment is non-vital tooth with dentinal collapse. I would like to share my clinical experience about "post & core build-up and all-ceramic restoration bonding" out of several success strategies of all-ceramic crown with this review article.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.36 no.5A
• /
• pp.536-542
• /
• 2011

For efficient utilization of spectrum resources in TV white space after DTV transition, FCC allowed usage of the spectrum for CR system. The CR system is required to cognize channel usage state for utilizing the unused spectrum in TV white space which coexists various primary and secondary systems. In the meantime, as a demand for high throughput communication had been increased recently, CR systems also consider to adopt channel bonding technology, thus spectrum sensing for channel bonded system is essentially required. In this paper, we propose a novel spectrum sensing algorithm for channel bonding system using a single channel receiver. For IEEE 802.l1af signal, the proposed algorithm provide detection probability of 90% with false alarm probability 10% at SNR -18dB for single channel system and at SNR -7dB for 8 channel bonded system, respectively. Utilizing the proposed scheme, we can detect channel bonded signal using only a single receiver, therefore system overhead for spectrum sensing can be reduced significantly.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.4
• /
• pp.31-39
• /
• 2008

To develop the MEMS cap bonding process without cavity formation, we electroplated Cu/Sn rim structures and measured the bonding characteristics for the Cu/Sn rims of $25{\sim}400{\mu}m$ width. As the effective device-mounting area ratio decreased and the failure strength ratio increased for wider Cu/Sn rim, these two properties were estimated to be optimized for the Cu/Sn rim with 150 ${\mu}m$ width. Complete bonding was accomplished at the whole interfaces of the Cu/Sn packages with the rim widths of 25 ${\mu}m$ and 50 ${\mu}m$. However, voids were observed locally at the interfaces with the rim widths larger than 100 ${\mu}m$. Such voids were formed by local non-contact between the upper and lower rims due to the surface roughness of the electroplated Sn.

• Information and Communications Magazine
• /
• v.16 no.5
• /
• pp.114-127
• /
• 1999

Telecommunications provisions of the interior of a country which are established only for a voice service are inefficient in various rule of grounding and bonding that are not concerned with services. It is a essential part for planning out a efficiency when employing telecommunication, researching and writing standards bout grounding and bonding of materials that are established in telecommunication to consider reliability of telecommunication equipment for a wideband and high speed service. Therefore we investigated present conditions and problems of domestic grounding and observed foreign technical standards related to several grounding and bonding. The foreign technical standards are compared with the domestic immature parts. As a result, presenting a domestic technical standards about grounding and bonding fitted to telecommunicateion provision when building is constructed or reconstructed, all parts related to this can be given the efficiency and the generality to provide system which has reliability.

• Electronics and Telecommunications Trends
• /
• v.28 no.5
• /
• pp.100-110
• /
• 2013

플립 칩 본딩 기술은 1960년대에 개발된 기술이지만 가격 경쟁력, 경박단소(輕薄短小)의 부품 구현, 뛰어난 전기적 특성으로 인해 최근에 와서 다시금 주목 받고 있고, 관련 시장이 지속적으로 성장하고 있는 분야이다. 기술 응용 분야로는 스마트 폰, 타블렛 PC 등 개인 휴대 단말기에서 고성능 서버, 게임 컨트롤로 등 다양한 제품을 아우르고 있다. 미세 피치의 경우 관련 시장이 2018년까지 연평균 35%의 폭발적인 성장을 보일 것으로 예측되고 있다. 따라서, 국내외 기업, 연구소, 학계 등에서 활발한 연구 활동이 진행되고 있다. 본고에서는 플립 칩 본딩 기술의 세부 기술을 살펴보며 동시에 피치에 따라 각 세부 기술에 있어 최근에 개발되고 있는 기술 동향을 논의하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.04a
• /
• pp.203-205
• /
• 2003

레이저 다이오드를 p-side-down 방식으로 본딩하기 위하여 AuSn 솔더합금을 증착한 후 온도와 압력, 시간을 변화시켜 본딩상태를 조사하였다. CuW위에 adhsion layer와 확산방지층을 각각 $500{\AA}$과 $2000{\AA}$을 증착하였으며 솔더층으로 AuSn을 $2.6{\mu}m$ 증착 하였다. 열처리는 질소 분위기에서 행하였으며, 표면의 거칠기는 AFM으로 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.12
• /
• pp.1079-1083
• /
• 1998

In this study, ultrasonic power of Aluminum wire bonder, bond time and bond force are investigated and valued in order to minimize failure of bonding pad lift. We also tried to control those 3 factors properly. We got the conclusion that if we turn down the ability of ultrasonic power or bond time, we can get a pad lift from a boundary between bond pad ad wire because pad metal and wire joining is unstable, but it is best condition when it ultrasonic power is 100∼130unit, bond time is 15∼20msec and bond force is 4∼6gf.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.2
• /
• pp.55-61
• /
• 2010

The device with tantalum silicide heater were bonded by Ag paste and Au SBB(Stud Bump Bonding) onto the Au coated substrate. The shear test after Au ABB and the thermal performance under current stressing were measured. The optimum condition of Au SBB was determined by fractured surface after die shear test and $350^{\circ}C$ for substrate, $250^{\circ}C$ for die during flip chip bonding with bonding load of about 300 g/bump. With applying 5W through heater on the device, the maximum temperature with Ag paste bonding was about $50^{\circ}C$. That with Au SBB on Au coated Si substrate showed $64^{\circ}C$. The difference of maximum temperatures is only $14^{\circ}C$, even though the difference of contact area between Ag paste bonding and Au SBB is by about 300 times and the simulation showed that the contact resistance might be one of the reasons.