• Composites Research
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• v.13 no.5
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• pp.31-36
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• 2000

The effect of several important processing variables was investigated on formation of porous mullite with acicular microstructure. Experimental results demonstrated that microstructure and porosity of porous mullite are depending on concentration of $AlF_3$, holding time at $900^{\circ}C$ and starting material. Acicular mullite was developed by increasing amount of $AlF_3$ and holding time at $900^{\circ}C$. Mullite began to be formed at $1200^{\circ}C$ and the resultant microstructure sintered at this temperature is similar to those at higher temperatures. Porosity increases with increase in amounts of $AlF_3$ and holding time at $900^{\circ}C$ . Therefore, it is found that microstructure of reaction-sintered porous mullite can be controlled by governing the amount of $AlF_3$ and holding time at $900^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.335-341
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• 2003

The composites were fabricated respectively 61vo1.% $\beta$ -SiC and 39vo1.% Ti $B_2$ spray-dried powders with the liquid forming additives of l2wt% $Al_2$ $O_3$＋ $Y_2$ $O_3$ by pressureless annealing at 1$700^{\circ}C$, 175$0^{\circ}C$, 180$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$ -SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and 4.4Mpaㆍ $m^{\frac{1}{2}}$ for composites by pressureless annealing temperature 1$700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 8.09${\times}$10$^{-3}$ ㆍcm for composite by pressureless annealing temperature 1$700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.500-503
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC+39vol.%$TiB_2$electroconductive ceramic composites were investigated as a function of the liquid additives of $Al_2O_3+Y_2O_3$. The result of phase analysis for the SiC+39vol.%$TiB_2$composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and $YAG(Al_5Y_3O_{12})4 crystal phase. The relative density of SiC+39vol.%$TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$. contents. The fracture toughness showed the highest value of $7.8 MPa.m^{1/2}$ for composites added with 12 wt % $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $7.3\times10_{-4}\Omega.cm\; and\; 3.8\times10_{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity of the SiC+39vol.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C\; to\; 700^{\circ}C$.

• Polymer(Korea)
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• v.35 no.5
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• pp.375-377
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• 2011

$PbTiO_3$/P(VDF/TrFE) 0~3 composites thin films with 0.10 and 0.13 of ceramic volume fraction factor have been fabricated by two-step spin coating technique and analyzed. 0~3 connectivity of $PbTiO_3$/P(VDF/TrFE) composites film was observed successfully by SEM micrography. The SEM picture confirmed 0~3 connectivity. And, in all the properties, 0~3 $PbTiO_3$/P(VDF/TrFE) composites film was superior to P(VDF/TrFE) copolymer. Therefore, with a good low-dielectric constant and a high pyroelectric coefficient, the composite thin films can be used for a new pyroelectric infrared sensor of higher performance.

• Journal of the Korean Chemical Society
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• v.44 no.6
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• pp.592-599
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• 2000

The fine particles of binary ceramic composite of titania-partially-stabilized zirconia(TPSZ) were synthesized by ultrasonic spray pyrolysis at the various temperatures, compositions and concentrations and the effects of process factors for synthesis on the characteristics of fine particles were discussed. The starting salt solutions were prepared to have the ionic concentrations of 0.025~0.1 M aqueous solutions. The fine particles were prepared to have the compositions of 90~97.5 wt% of $ZrO_2$ and 2.5~10 wt% of $TiO_2$. The temperatures for particle synthesis were regulated to be 400~550$^{\circ}C$ as a drying zone, 800~1100$^{\circ}C$ as a pyrolysis zone. The produced fine particles were collected by a wet process and analyzed to investigate characteristic properties after being dried. The compositions of ceramic fine particles were determined by Inductively Coupled Plasma-Atomic Emission Spectroscopy(ICP-AES) technique and phases, morphologies and particle sizes of those were investigated by Raman Spectroscopy, X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), Transmission Electron Microscopy(TEM) and Particle Size Analyzer(PSA) techniques.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.352-357
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% TiB$_2$ and using 61vo1.% SiC - 39vo1.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 180$0^{\circ}C$ for 4 hours. Reactions between SiC and transition metal TiB$_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), TiB$_2$ and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-TiB$_2$, and SiC(2H), WC and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-WC composites. $\beta$\$\longrightarrow$$\alpha$-SiC phase transformation was ocurred on the SiC-TiB$_2$, but $\alpha$\$\longrightarrow$$\beta$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the vicker's hardness, the flexural strength and the fracture toughness showed respectively value of 96.2%, 13.34GPa, 310.19Mpa and 5.53Mpaㆍml/2 in SiC-WC composites. The electrical resistivity of the SiC-TiB$_2$ and the SiC-WC composites is all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$. 2.64${\times}$10-2/$^{\circ}C$ of PTCR of SiC-WC was higher than 1.645${\times}$10-3/$^{\circ}C$ of SiC-TiB$_2$ composites.posites.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.4
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• pp.141-146
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• 2002

The mechanical and electrical properties of the pressureless sintered SiC-TiB$_2$electroconductive ceramic composites were investigated as functions of the transition metal of TiB$_2$. The result of phase analysis for the SiC-TiB$_2$ composites by XRD revealed $\alpha$-SiC(6H), TiB$_2$, and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB$_2$composites added with 39vol.%TiB$_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m$^{1}$2/ for composites added with 39vol.%TiB$_2$under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB$_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB$_2$composites was all positive temperature coefficient resistance(PCTR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.EX>.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1538-1540
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• 2003

The composites were fabricated respectively 61vol.% ${\beta}$-SiC and 39vol.% $TiB_2$ spray-dried powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1700^{\circ}C,\;1750^{\circ}C\;1800^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and $4.4Mpa{\cdot}m^{1/2}$ for composites by pressureless annealing temperature $1700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of $8.09{\times}10^{-3}{\Omega}{\cdot}cm$ for composite by pressureless annealing tempe rature $1700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-$TiB_2$ composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.480-486
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• 2021

Magnetoelectric (ME) composite is composed of a piezoelectric material and a magnetostrictive material. Among various ME structures, 2-2 type layered ME composites are anticipated to be used as high-sensitivity magnetic field sensors and energy harvesting devices especially operating at its resonance modes. Rosen type piezoelectric transducer using piezoelectric material is known to amplify a small electrical input voltage to a large electrical output voltage. The output voltage of these Rosen type piezoelectric transducers can be further enhanced by modifying them into ME composite structures. Herein, we fabricated Rosen type ME composites by sandwiching Rosen type PMN-PZT single crystal between two Ni layers and studied their ME coupling. However, the voltage step-up ratio at the resonance frequency was found to be smaller than the value calculated with α_ME value. The ATILA FEA (Finite Elements Analysis) simulation results showed that the position of the nodal point was changed with the presence of a magnetostrictive layer. Thus, while designing a Rosen type ME composite with high performance in a resonant driving situation, it is necessary to optimize the position of the nodal point by optimizing the thickness or length of the magnetostrictive layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.72-79
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• 2022

Piezoelectric energy harvesting technologies, which can be used to convert the electricity from the mechanical energy, have been developed in order to assist or power the wearable electronics. To realize non-toxic and biocompatible electronics, the lead-free (Ba_0.85Ca_0.15)(Ti_0.90Zr_0.10)O₃ (BCTZ) nanoparticles (NPs) are being studied with a great attention as flexible energy harvesting device. Herein, piezoelectric hybrid nanocomposites were fabricated using BCTZ NPs-embedded poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] matrix to improve the performance of flexible energy harvester. Output performance of the fabricated energy device was investigated by the well-optimized measurement system during the periodically bending and releasing motions. The generated open-circuit voltage and the short-circuit current of the piezoelectric hybrid nanocomposite-based energy harvester reached up to ~15 V and ~1.1 ㎂, respectively; moreover, the instantaneous power of 3.5 ㎼ is determined from load voltage and current at the external load of 20 MΩ. This research is expected to cultivate a new approach to high-performance wearable self-powering electronics.