• Applied Chemistry for Engineering
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• v.27 no.3
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• pp.227-238
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• 2016

This review article highlights different types of nano-sized catalysts for the selective alcohol oxidation to form aldehydes (or ketones) with supported or immobilized metal nanoparticles. Metal nanoparticle catalysts are obtained through dispersing metal nanoparticles over a solid support with a large surface area. The nanocatalysts have wide technological applications to industrial and academic fields such as organic synthesis, fuel cells, biodiesel production, oil cracking, energy conversion and storage, medicine, water treatment, solid rocket propellants, chemicals and dyes. One of main reactions for the nanocatalyst is an aerobic oxidation of alcohols to produce important intermediates for various applications. The oxidation of alcohols by supported nanocatalysts including gold, palladium, ruthenium, and vanadium is very economical, green and environmentally benign reaction leading to decrease byproducts and reduce the cost of reagents as opposed to stoichiometric reactions. In addition, the room temperature alcohol oxidation using nanocatalysts is introduced.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.187-193
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• 2012

Digital X-ray image detector has been applied for medical and industrial fields. Photoconductors have been used to convert the X-ray energy to electrical signal on the direct digital X-ray image detector and amorphous selenium (a-Se) has been used as a photoconductor, normally. In this work, we use 2-dimensional device (2-D) simulator to study about physical phenomena in the a-Se, when we irradiate electromagnetic radiation (${\lambda}=486nm$) on the a-Se surface. We evaluate the electron-hole generation rate, electron-hole recombination rate, and electron/hole distribution in the a-Se using 2-D simulator. This simulator divides the device into triangle and calculates using interpolation method. This simulation method has been proposed for the first time and we expect that it will be applied for the development of digital X-ray image detector.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.596-601
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• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.24 no.3
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• pp.189-202
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• 2012

An Oscillating Water Column (OWC) wave generation system uses the air flow induced by the vertical motion of water column in the air chamber as a driving force of turbine. It is well known that OWC is one of the most efficient devices to harness wave power. This study estimated the air flow velocity from the time variation of the water level fluctuation in the air chamber under regular wave conditions using 3-dimensional numerical irregular wave tank (3D-NIT) model that can simulate the 3-dimensional irregular wave field. The applicability of the 3D-NIT model was validated by comparing numerically predicted air flow velocities with hydraulic experimental results. In addition, the characteristics of air flow frequency spectrum variation due to the incident frequency spectrum change, and the variations of frequency spectrum and wave reflection due to the existence of converter inside the air chamber were discussed. It is found that the phase difference exists in between the air flow velocity and the water level fluctuation inside the air chamber, and the peak frequency of the spectrum in water level fluctuation is amplified by the resonance in the air chamber.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.289-289
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• 2012

터치패널은 키보드나 마우스와 같은 입력장치를 사용하지 않고, 스크린에 손가락, 펜 등을 접촉하여 입력하는 방식이다. 누구나 쉽게 입력할 수 있는 장점으로 인해 기존에는 현금인출기, 키오스크 등 공공분야에 주로 많이 사용되어 왔으나, 최근의 터치스크린은 휴대폰, 게임기, 네비게이션, 노트북 모니터 등 개인정보기기의 입력장치로 활용분야가 넓어져가고 있다. 최근의 정전용량 방식의 터치패널은 디스플레이 패널 위에 올여지는 형태의 Add on type이며, 테블렛의 출현으로 터치패널의 사이즈가 커지면서 인듐산화물 투명성 전도막의 두께가 두꺼워지고, 이로 인하여 광학적 특성인 투과율이 저하되는 문제가 발생하여 투과율을 높여주기 위한 새로운 전도박막 제조방법이 요구되는 상황이다. 현재의 고글절 산화물(TiO2)과 저굴절 산화물(SiO2)의 적층형태의 저반사 특성의 다층막은 주로 플라즈마 보조의 전자빔 증착기를 이용하여 제조되기 때문에, 저반사 특성이 우수하지만 대면적 크기의 대량생산에는 적합하지가 않다. 그리고 태양전지의 에너지 변환효율도 태양전지로 흡수되는 태양광의 량에 크게 의존하기 때문에, 태양전지로 흡수되는 태양광 량을 높이기 위하여 태양전지의 가장 위층에 혹은 모듈 제작시 커버유리의 내부에 저반사 특성을 갖는 박막을 코팅한다. 특히 박막태양전지의 경우는 대면적의 유리위에 저반사 코팅을 해야 한다. 본 연구에서는 In-line magnetron sputtering system을 사용하여 소다라임 유리 기판 위에 고글절 산화물(Nb2O5)과 저굴절 산화물(SiO2)의 2층 적층형태의 "SiO2/Nb2O5/SiO2/Nb2O5/SLG" 다층 박막을 증착하고, 저반사의 광학적 특성을 하였고, 이를 논하고자한다. 일반적으로 빛이 투과되는 투명한 기판이 공기층에 노출되어있을 경우에 기판의 양면에서 공기층과의 계면에서 각각 4%의 반사율 즉, 총 8%의 반사율을 갖는데, 본 연구의 다층 박막에서는 530에서 540nm 파장 영역에서 투과율은 95% 이상, 반사율은 4.8% 이하이었다. 이 결과는 터치패널과 박막태양전지 시장의 Needs에 대응할 수 있기 때문에 산업의 응용측면에서 매우 중요한 연구 성과를 얻었다고 말할 수 있다. (본 연구는 지식경제부 사업화연게기술개발 연구지원금으로 일부 이루어졌음).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.161-162
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• 2011

최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 태양전지 연구가 활발히 진행되고 있다. GaN 물질은 높은 전자 이동도와 높은 포화 속도 등 광전자 소자에 유리한 광, 전기적 특성들을 가지고 있다. 또한, In의 함량을 변화시켜가며, 0.7eV에서 3.4eV까지 밴드갭을 조절함으로써, 자외선부터 적외선까지 태양빛 스펙트럼의 대부분을 흡수할 수 있는 장점이 있다. InGaN 태양전지의 효율을 높이기 위해서는 In의 함량을 늘려 밴드갭을 줄이는 것이 중요하다. 하지만 GaN 와 InN 간의 격자 부정합으로 인해 In 함량이 높은 단결정 InGaN 층을 두껍게 성장 하는 것이 어렵다. 때문에 GaN 기반 태양전지 관련 연구 그룹들이 태양전지의 효율 향상을 위해 활성층에 양자우물(MQWs) 구조, Supper Lattice (SLs) 구조와 같이 얇은 InGaN/GaN 층을 주기적으로 반복하여 적층함으로써 높은 조성의 In을 함유한 상질의 InGaN/GaN 층을 성장하는 연구들을 진행해 왔다. 본 연구에서는, p-i-n 구조와 MQW 구조를 갖는 InGaN 기반 태양전지를 제작하여, 각각의 특성을 분석해 봄으로써, In0.1Ga0.9N 태양전지 활성층의 구조에 따른 장/단점에 대해 논의하였다. 먼저 MOCVD를 이용하여 200 nm의 i-In0.1Ga0.9N 활성층을 갖는 p-i-n 구조와 In0.19Ga0.81N/GaN(3 nm/8 nm) MQWs (8 periods) 구조를 갖는 태양전지 에피를 각각 성장하였고, 그 후 공정을 통해 그림 1과 같이 InGaN 태양전지 소자를 제작하였다. 그 후, 각 태양전지의 전류/전압 곡선과 외부양자효율을 측정하여 그림 2와 같은 결과를 얻었다. p-i-n과 MQW 샘플의 외부양자효율은 각각 ~70%, ~25%로 측정 되었다. MQW 샘플의 외부 양자효율이 높지 않음에도 불구하고 p-i-n 구조에 비해 높은 In 함량을 가지고 있으므로, 더 넓은 파장의 빛을 흡수하여, 높은 단락전류(0.778 mA/cm2)를 보이고 있다. 또한 p-i-n 구조에 비해 높은 개방전압(2.3V)를 가지고 있으므로, MQW 샘플이 약 17% 정도 높은 변환효율(1.4%)를 보이고 있다. 이후 추가적으로 p-i-n 과 MQW 구조의 InGaN 태양전지에 나타나는 Voc와 Jsc의 차이를 Polarization 효과를 비롯한 다양한 측면에서 분석해 보고자 한다.

• Journal of the Institute of Convergence Signal Processing
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• v.19 no.2
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• pp.61-67
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• 2018

Welding preheating means that the surface of the base material to which the metal is welded before the main welding is heated to a constant temperature. It prevents the cracks of the adjacent influences such as reduction of material hardening degree by controlling the cooling rate, suppression of segregation of impurities, prevention of thermal deformation, and moisture removal. For this reason, it is a necessary operation for high quality welding. Induction heating is an efficient heating method that converts electric energy into heat energy by applying electromagnetic induction phenomenon. Compared with combustion heat generated by gas and liquid, it is clean, stable, and economical as well as rapid heating. It can be heated regardless of the shape, depth and material of the heating body by modifying the shape of the frequency and the coil with a simple structure. In this paper, we implemented a low frequency welding preheating system using induction heating technique and observed the temperature changes of coil resistance, inductance and automotive transmission parts according to the height of each transmission in winding coil for three kinds of automotive transmission parts. We confirmed that the change of current is a very important factor in the low frequency heating.

• Korean Journal of Environmental Agriculture
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• v.26 no.2
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• pp.179-185
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• 2007

A new technology that utilizes a microbial fuel cell (MFC) has been developed to generate electricity directly from the oxidation of organic matters such as carbohydrates or complex organics in wastewater. Fermentation of these organic matters results in production of volatile fatty acids (VFAs), alcohols, $CO_2$ and $H_2$. We investigated the electricity-producing potential of the VFAs and actual food processing wastewater using a two-chambered MFC. The electrons produced by acetate degradation were proportional to acetate concentration in the medium. Acetate concentration and generated power were linearly correlated at a low range or acetate concentration (< 8 mg/L), but at above 8 mg/L of acetate the power produced was maintained at 0.1 mW. When butyrate was added to the anode acclimated to acetate, there was a lag period of 30 hr for electricity generation. However, when propionate was added to the same anode bottle, lag periods were not existed. The wastewater from baby food processing generated the maximum power density of $81{\pm}7\;mW/m^2$ of electricity and exhibited the Coulombic efficiencies of 27.1% and 40.5% based on TCOD and SCOD, respectively. Sugars in the food processing wastewater were reduced within 50 h from 230 mg/L < 30 mg/L.

• Journal of the Korean Chemical Society
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• v.62 no.5
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• pp.358-363
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• 2018

The purpose of this study is to show the possibility of using Cu catalyst in removal of $NO_x$ from automobile exhaust which is regarded as the primary source of fine dust PM2.5. The energy and the bond lengths of the three possible structures of Cu-NO complex, which is formed by binding NO molecule to Cu, and the changes in IR and Raman spectra are calculated using MPW1PW91 method on the level of 6-311(+)G(d,p) of basis sets with Gaussian 09 program. As a result, the enthalpy of formation of the Cu-NO complexes are obtained as ${\Delta}H=104.89$, 91.98, -127.48 kJ/mol for the linear, bent, and bridging forms of them, respectively. And the bond lengths between N and O in NO complexes, which becomes longer than NO molecule, indicates that O is easily reduced from Cu-NO. In addition, the Cu-NO complexes using Cu catalyst can be easily measured by infrared or Raman spectroscopy because in the IR and Raman spectra of the NO and Cu-NO complexes the positon and the intensity of bands are definitely different in each vibration mode.