• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Journal of the Korean Chemical Society
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• v.55 no.3
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• pp.502-508
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• 2011

Synthesis of $Nd_{2x}Cd_{2-3x}SiO_4$ ($0.01{\leq}x{\leq}0.21$) [S1-S3: x=0.01, 0.11 and 0.21] solid solutions were prepared by solgel method. Powder x-ray diffraction (XRD) results show monoclinic unit cell with space group P21/m. The average crystallite sizes are found to be 20 to 45 nm. The Scanning Electron Microcopy (SEM) images show morphology of the sample is in globular nature. The energy dispersive analysis of x-rays (EDX) and X-ray mapping results confirmed that all the constituent elements of the composites were present and that were distributed in uniformly. The optical absorption band at ~750 nm was due to $^4I_{9/2}{\rightarrow}^4F_{7/2}+^4S_{3/2}$ transition optically active $Nd^{3+}$ ions. Electron Paramagnetic Resonance (EPR) lineshapes of S1-S3 at 10, 40, 77 and 300 K show a broad unresolved isotropic lineshapes were observed due to rapid spin lattice relaxation of $Nd^{3+}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.98-109
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• 2002

Bluetooth technology is a publicly available specification proposed for Radio Frequency (RF) communication for short-range :1nd point-to-multipoint voice and data transfer. It operates in the 2.4㎓ ISM(Industrial, Scientific and Medical) band and offers the potential for low-cost, broadband wireless access for various mobile and portable devices at range of about 10 meters. In this paper, we describe the structure and the test results of the bluetooth baseband module with direct memory access method we have developed. This module consists of three blocks; link controller, UART interface, and audio CODEC. This module has a bus interface for data communication between this module and main processor and a RF interface for the transmission of bit-stream between this module and RF module. The bus interface includes DMA interface. Compared with the link controller with FIFOs, The module with DMA has a wide difference in size of module and speed of data processing. The small size module supplies lorr cost and various applications. In addition, this supports a firmware upgrade capability through UART. An FPGA and an ASIC implementation of this module, designed as soft If, are tested for file and bit-stream transfers between PCs.

• Journal of the Korean Chemical Society
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• v.61 no.4
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• pp.163-167
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• 2017

Along with the progress of white LED technology, red phosphors have become increasingly important in industry and academia, and a more specific demand has steadily increased in the market. Red phosphors are used in high efficiency and high rendering LED lightings. However, using red phosphors with $Eu^{2+}$ activators caused color rewarming and reduced emission intensity in white LED chips due to strong reabsorption in the green or yellow wavelength range caused by the 4f-5d transition. $Mn^{4+}$ doped phosphors which have no such drawbacks and which can further improve the color rendering index (CRI) are now of great interest. However, $Mn^{4+}$-doped phosphors have a disadvantage in that the emission wavelength is determined depending on the host due to the $^2E_g{\rightarrow}^4A_2$ transition. In this study, the $SrO-BaO-GeO_2$ solid-solution was selected, and $Sr_{1-x}B_axGe_4O_9:Mn^{4+}{_{0.005}}$ ($0{\leq}x{\leq}1$) phosphors were synthesized and characterized. This led to a versatile color tuning in LED technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.259-259
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• 2016

반도체 산업 전반에 걸쳐 이루어지고 있는 연구는 소자를 더 작게 만들면서도 구동능력은 우수한 소자를 만들어내는 것이라고 할 수 있다. 따라서 소자의 미세화와 함께 트랜지스터의 구동능력의 향상을 위한 기술개발에 대한 필요성이 점차 커지고 있으며, 고유전(high-k)재료를 트랜지스터의 게이트 절연막으로 이용하는 방법이 개발되고 있다. High-k 재료를 트랜지스터의 게이트 절연막에 적용하면 낮은 전압으로 소자를 구동할 수 있어서 소비전력이 감소하고 소자의 미세화 측면에서도 매우 유리하다. 그러나, 초미세화된 소자를 제작하기 위하여 high-k 절연막의 두께를 줄이게 되면, 전기적 용량(capacitance)은 커지지만 에너지 밴드 오프셋(band-offset)이 기존의 실리콘 산화막(SiO2)보다 작고 또한 열공정에 의해 쉽게 결정화가 이루어지기 때문에 누설전류가 발생하여 소자의 열화를 초래할 수 있다. 따라서, 최근에는 이러한 문제를 해결하기 위하여 게이트 절연막 엔지니어링을 통해서 누설전류를 줄이면서 전기적 용량을 확보할 수 있는 연구가 주목받고 있다. 본 실험에서는 high-k 물질인 Ta2O5와 SiO2를 적층시켜서 누설전류를 줄이면서 동시에 높은 캐패시턴스를 달성할 수 있는 게이트 절연막 엔지니어링에 대한 연구를 진행하였다. 먼저 n-type Si 기판을 표준 RCA 세정한 다음, RF sputter를 사용하여 두께가 Ta2O5/SiO2 = 50/0, 50/5, 50/10, 25/10, 25/5 nm인 적층구조의 게이트 절연막을 형성하였다. 다음으로 Al 게이트 전극을 150 nm의 두께로 증착한 다음, 전기적 특성 개선을 위하여 furnace N2 분위기에서 $400^{\circ}C$로 30분간 후속 열처리를 진행하여 MOS capacitor 소자를 제작하였고, I-V 및 C-V 측정을 통하여 형성된 게이트 절연막의 전기적 특성을 평가하였다. 그 결과, Ta2O5/SiO2 = 50/0, 50/5, 50/10 nm인 게이트 절연막들은 누설전류는 낮지만, 큰 용량을 얻을 수 없었다. 한편, Ta2O5/SiO2 = 25/10, 25/5 nm의 조합에서는 충분한 용량을 확보할 수 있었다. 적층된 게이트 절연막의 유전상수는 25/5 nm, 25/10 nm 각각 8.3, 7.6으로 비슷하였지만, 문턱치 전압(VTH)은 각각 -0.64 V, -0.18 V로 25/10 nm가 0 V에 보다 근접한 값을 나타내었다. 한편, 누설전류는 25/10 nm가 25/5 nm보다 약 20 nA (@5 V) 낮은 것을 확인할 수 있었으며 절연파괴전압(breakdown voltage)도 증가한 것을 확인하였다. 결론적으로 Ta2O5/SiO2 적층 절연막의 두께가 25nm/10nm에서 최적의 특성을 얻을 수 있었으며, 본 실험과 같이 게이트 절연막 엔지니어링을 통하여 효과적으로 누설전류를 줄이고 게이트 용량을 증가시킴으로써 고집적화된 소자의 제작에 유용한 기술로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.313-313
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• 2009

OLED 소자는 직접발광, 광시야각, 그리고 빠른 응답속도 때문에 동영상에 적합하여 최근 각광받고 있는 디스플레이장치 중의 하나이다. OLED 소자의 양극재료로는 높은 광투과율과 $\sim10^{-4}{\Omega}\;cm$ 수준의 낮은 전기 비저항을 갖는 ITO (Sn-doped $In_2O_3$)가 널리 사용되고 있다. 하지만 원료 물질인 인듐의 수급량 부족으로 인한 문제점과 독성, 저온증착의 어려움, 스퍼터링시 음이온 충격에 의한 막 손상으로 저항의 증가의 문제점이 있고, 또한 액정디스플레이의 투명전극으로 사용될 경우 $400\;^{\circ}C$정도의 높은 온도와 수소 플라즈마 분위기에서 장시간 노출 시 열화로 인한 광학적 특성변화가 문제가 된다. 반면에 Al이 도핑 된 ZnO (AZO)박막은 넓은 밴드갭 (3.37eV)와 400nm에서 700nm 사이의 가시광 영역에서 80% 이상의 우수한 투과성을 지니고 있다. 특히 Al이 도핑된 ZnO는 박막의 전기적 특성이 크게 향상되어 디스플레이나 태양전지로의 응용이 가능하다. 또한 비교적 낮은 비용과 플라즈마에서의 안정성, 무독성, 그리고 전기전도성과 같은 많은 이점이 있다. 그 결과 AZO 박막은 ITO기판을 대안하는 지원물질로 활발히 연구가 진행되고 있다. 본 연구에서는 TCO 박막의 면 저항과 표면 거칠기에 따른 OLED 소자의 특성을 분석하였다. ITO와 AZO 박막은 챔버 내 다양한 가스 분위기(Ar, Ar+$O_2$ and Ar+$H_2$)에서 R.F Magnetron Sputtering방법으로 증착하였다. TCO 박막의 구조적인 이해를 돕기 위해서 X-ray diffraction 과 FESEM으로 분석하였다. 광학적 투과도와 박막의 두께는 ultraviolet spectrophotometer (Varian, cary-500)와 surface profile measurement system으로 각각 측정하였다. 면저항 charge carrier 농도, 그리고 TCO 박막의 이동도와 같은 전기적특성은 four-point probe와 hall effect measurement(HMS-3000)로 각각 측정하였다. TCO 박막의 표면 거칠기 조절을 위해 photo lithography 공정을 사용하여 TCO 박막을 화학에칭 하였다. 미세사이즈 패턴 마스크가 사용되었으며 에칭의 깊이는 에칭시간에 따라 조절하였다. TCO 박막의 표면 형태는 FESEM과 AFM으로 관찰하였다. 투명전극으로 사용되는 ITO 및 AZO 기판 상용화를 위해 ITO 및 AZO 기판 위에 ${\alpha}$-NPB, Alq3, LiF, Al 의 순서로 증착 및 패터닝함으로써 OLED 소자를 제작하였다. 전류밀도와 전압 그리고 발광휘도와 전압과 같은 전기적 특성은 spectrometer(minolta CS-1000A)를 이용하여 측정하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.54-61
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• 2001

A fully on-chip open-drain CMOS output driver was designed for high bandwidth DRAMs, such that its output voltage swing was insensitive to the variations of temperature and supply voltage. An auto refresh signal was used to update the contents of the current control register, which determined the transistors to be turned-on among the six binary-weighted transistors of an output driver. Because the auto refresh signal is available in DRAM chips, the output driver of this work does not require any external signals to update the current control register. During the time interval while the update is in progress, a negative feedback loop is formed to maintain the low level output voltage ($V_OL$) to be equal to the reference voltage ($V_{OL.ref}$) which is generated by a low-voltage bandgap reference circuit. Test results showed the successful operation at the data rate up to 1Gb/s. The worst-case variations of $V_{OL.ref}$ and $V_OL$ of the proposed output driver were measured to be 2.5% and 7.5% respectively within a temperature range of $20^{\circ}C$ to $90^{\circ}C$ and a supply voltage range of 2.25V to 2.75V, while the worst-case variation of $V_OL$ of the conventional output driver was measured to be 24% at the same temperature and supply voltage ranges.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.10
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• pp.1061-1070
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• 2009

In this paper, we have designed TDL(True-time Delay Line) for eliminating beam-squint occurring in active phased array antenna with large electrical size operated in wide bandwidth, and have tested its electrical performance. The proposed TDL device is composed of 4-bit microstrip delay line structure and MMIC amplifier for compensation of the delay-line loss. The measured results of gain and phase versus delay state satisfy the electrical requirements, also P1dB output power and noise figure meet the requirement. To verify the performance of fabricated TDL, we have simulated the beam patterns of wide-band active phased array antenna using the measured results and have certified the beam pattern compensation performance. As a result of simulated beam pattern compensation with respect to the 675.8 mm size antenna which is operated in X-band, 800 MHz bandwidth, we have reduced the beam squint error of ${\pm}1^{\circ}$ with ${\pm}0.1^{\circ}$. So this TDL module is able to be applied to active phase array antenna system.

• Journal of Hydrogen and New Energy
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• v.10 no.1
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• pp.59-69
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• 1999

AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5mTorr, flow rate ratio of $Ar/N_2=1$, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.664-669
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• 2012

Nano-structured one-dimensional $Na_2Ti_6O_{13}$ particles were synthesized by a molten salt process. Effects of processing parameters on the microstructure and band gap energy of the $Na_2Ti_6O_{13}$ powder were studied in this paper. For the synthesis of the $Na_2Ti_6O_{13}$ particles, two different raw materials of tubular shaped Na-titanate (Na-TiNT) and spherical shaped $TiO_2$ were utilized. Synthesizing with the raw material of Na-TiNT, around 70nm thick 1D-$Na_2Ti_6O_{13}$ with the bandgap energy of 3.5 eV was obtained at $810^{\circ}C$. Below $810^{\circ}C$ or without the presence of NaCl, 1D-$Na_2Ti_6O_{13}$ was in a relatively short in length and agglomerated state. With the processing temperature increased, the thickness of the 1D-$Na_2Ti_6O_{13}$ was also observed to be increased. On the other hand, when $TiO_2$ was employed as a raw material, the mixed amount of $Na_2CO_3$ played an important role in transforming the morphology and phase of the raw material, affecting the bandgap energy of the synthesized product. Specific surface area of the synthesized 1D-$Na_2Ti_6O_{13}$ was significantly affected by the raw and mixed materials as well as processing temperature. When Na-TiNT was processed at $810^{\circ}C$ with NaCl, the specific surface area of the 1D-$Na_2Ti_6O_{13}$ showed the best value of 30.63 $m^2/g$.