• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.4
• /
• pp.143-148
• /
• 2019

We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.

• Korean journal of applied entomology
• /
• v.56 no.4
• /
• pp.377-385
• /
• 2017

Estimates of evolutionary sequence divergence and inference of a phylogenetic tree for eight delphacid planthopper species were based on the full-length nucleotide sequence of the internal transcribed spacer 2 (ITS2) region. Size of the ITS2 DNA sequence varied from 550 bp in Sogatella furcifera to 699 bp in Nilaparvata muiri. Nucleotide sequence distance ($d{\pm}S.E.$) was lowest between N. muiri and N. bakeri ($0.001{\pm}0.001$), and highest between Ecdelphax cervina and Stenocranus matsumurai ($0.579{\pm}0.021$). Sequence distance between N. lugens and other planthoppers ranged from $0.056{\pm}0.008$ (N. muiri) to $0.548{\pm}0.021$ (S. matsumurai). In the neighbor-joining phylogenetic tree, all planthoppers were clustered separately into a species group, except N. muiri and N. bakeri. The ITS2 nucleotide sequence of N. lugens was used to design four loop-mediated isothermal amplification (LAMP) primer sets (BPH-38, BPH-38-1, BPH-207, and BPH-92) for N. lugens species-specific detection. After the LAMP reaction of three rice planthoppers, N. lugens, S. furcifera, and Laodelphax striatellus, with the four LAMP primer sets for 60 min at $65^{\circ}C$, LAMP products were observed in the genomic DNA of N. lugens only. In the BPH-92 LAMP primer set, the fluorescence relative to that of the negative control differed according to the amount of DNA (0.1 ng, 10 ng, and 100 ng) and incubation duration (20 min, 30 min, 40 min, and 60 min). At $65^{\circ}C$ incubation, the difference was clearly observed after 40 min with 10 ng and100 ng, but with a 60-min incubation period, the minimum DNA needed was 0.1 ng. However, there was little difference in fluorescence among all DNA amounts tested with 20 or 30 min incubations.

• Journal of the Korean Vacuum Society
• /
• v.18 no.4
• /
• pp.288-295
• /
• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Clinical and Experimental Reproductive Medicine
• /
• v.17 no.1
• /
• pp.71-80
• /
• 1990

New immunoassay systems for the detection of anti-sperm antibodies were developed. For this, sperm surface protein was purified by the immunoaffinity column prepared by the coupling of rabbit anti-human IgG antibodies to Sepharose-4B. Fraction eluted by tris-HCI buffer containing SDS showed a single band having molecular weight of about 60KD on electrophoresis. Enzyme HRP labelled goat anti-human IgG and chemiluminescence aminobutylethyl-isoluminol(ABEI) labelled rabbit anti-human IgG were used for ELISA and CIA, respectively. These two labelled conjugate bound well with human IgG. When serum dilution curves were made to titrate positive serums, two kinds of curves with steep and sluggish slopes were obtained Serum samples were categorized into 3 groups: positive, weak positive and negative based on slope of curve and O.D. values at 1:160 dilution of serum. When ELISA and CIA were compared to conventional method Kibrick test by the determinations of 62 male serums with different diagnosis, the results of ELISA and CIA agreed well, but both disagreed with that of Kibrick test. This study showed that purified sperm surface antigen can be used to develope solid-phase immunoassay systems such as ELISA and CIA which may eliminate the problems encounted the immobilization of living sperm in other tests.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.353-353
• /
• 2012

InAs nanowires (NWs)는 나노소자스케일의 전자소자나 광전자소자를 위한 기본 단위(building block)로 사용될 수 있고, 1차원적 나노구조를 가지면서 나타나는 특별한 전기적, 광학적 특성으로 인해 전계효과 트랜지스터, 레이저, 광발광 다이오드, 가스 검출 센서 등의 많은 응용소자로 활용을 위한 연구가 진행되 있으며 주로 실리콘, 갈륨비소 기판 위에 금속유기기상 증착(MOCVD) 또는 분자선 증착 (MBE)을 이용하여 선택적 수직배열 성장 조절을 위한 연구와 특성 평가 연구가 주로 이뤄지고 있다. 본 연구에서는 InAs NWs를 MBE 장치를 이용하여 Si(111) 기판 위에 Au와 같은 촉매를 사용하지 않고 Si과 InAs의 큰 격자 불일치로 인하여 성장되는 Volmer-weber 성장 모드를 이용 하였다. InAs NW 성장모드는 Si ($5.4309{\AA}$)과 InAs ($6.0584{\AA}$) 사이에 큰 격자상수 차이를 이용하게 되는데 촉매를 사용하여 성장하는 일반적인 이종 화합물 반도체 성장 모드와 달리 액상상태가 존재하지 않고 바로 In과 As이 Si 기판 위를 이동하여 수직방향으로 성장이 이루어지는 vaporsolid(VS) 모드이다. InAs NW V-S 성장 모드는 Si 기판과의 격자 상수차에 의한 스트레스를 이용해야 하므로 Si기판 위에 존재하는 native oxide는 완벽히 제거되어야 한다. InAs NW 최적 성장 조건을 찾기위해 V/III raitio, 성장 온도, 기판표면처리 등의 성장 변수를 변화 시켜가며 실험을 수행하였다. Native oxide를 제거하기 위하여 HF와 buffered oxide etchant (BOE)를 사용하였다. InAs NWs 성장조건은 Indium flux를 고정 시키고 V/III ratio는 50~400까지 변화를 주었다. V/III ratio를 200으로 고정을 시키고 성장온도를 $375{\sim}470^{\circ}C$에서 성장 하였다. 이 때 InAs NWs는 $430^{\circ}C$에서 가장 높은 밀도와 aspect ratio를 얻을 수 있었다. Arsenic flux에 대해서는 많을 수록 좋은 aspect ratio를 얻을 수 있었다. 하지만 InAs 구조의 절대 부피는 거의 같다는 것을 확인 할 수 있었고 이는 온도와 V/III ratio가 Indium adatom의 surface migration length에 대하여 중요한 요소로 작용되는 것을 알 수 있었다.

• Journal of Adhesion and Interface
• /
• v.17 no.4
• /
• pp.141-148
• /
• 2016

In this work, mesoporous silica (SBA-15) was synthesized via self-assembly process using triblock copolymer ($PEO_{20}PPO_{70}PEO_{20}$, P123) as template and tetraethyl orthosilicate (TEOS) as silica source under acidic condition. SBA-15 have high surface area ($704m^2g^{-1}$) and uniform pore size (8.4 nm) with well-ordered hexagonal mesostructure. Spiropyran-functionalized SBA-15 (Spiropyran-SBA-15) was synthesized via post-synthesis process using 3-(triethoxysilyl)propyl isocyanate (TESPI) and 1-(2-Hydroxyethyl)-3,3-dimethy-lindolino-6'-nitrobenzopyrylo-spiran (HDINS). Spiropyran-SBA-15 was produced with hexagonal array of mesopores without damage of mesostructre. Surface area and pore size of Spiropyran-SBA-15 were $651m^2g^{-1}$ and 8.0 nm, respectively. Optochemical properties of Spiropyran-SBA-15 was studied with chemical vapors such as EtOH, THF, $CHCl_3$, Acetone and HCl. Main peaks of photofluorescence of Spiropyran-SBA-15 exhibited blue shift in the range of 603.4~592.1 nm after exposure under EtOH, THF, $CHCl_3$, and Acetone vapors. Normalized peak intensities decreased in the range of 0.8~0.3. The main peak of photofluorescence of Spiropyran-SBA-15 showed significant blue shift of 592.1 nm after exposure under HCl vapor, while normalized peak intensity decreased to 0.1.

• Journal of the Korean Applied Science and Technology
• /
• v.30 no.1
• /
• pp.173-182
• /
• 2013

Atopic dermatitis is a chronic, relapsing inflammatory skin disease associated with dysfunction of skin barrier and cutaneous hyper-reactivity to environmental triggers. In the previous study, cytotoxicity, antioxidant, anti-inflammatory and anti-allergic activities were investigated for various herbal extracts such as Aloe vera L. (AV), Viola mandshurica W. Becker (VM), Punica granatum L. (PG), and Dendrobium nobile L. (DN) in order to develop effective therapeutic herbal extracts for atopic dermatitis, In this study, anti-inflammatory activities of these herb extracts in lipopolysaccharide (LPS)-induced macrophage RAW264.7 cells were further examined to find the underlying molecular mechanisms. The RT-PCR (reverse transcription polymerase chain reaction) analysis showed that PG, DN and AV inhibited effectively the gene expression of pro-inflammatory cytokines IL-6 and IL-$1{\beta}$ in LPS-stimulated macrophages, while VM did not. The transfection and luciferase analysis exhibited that all herbal extracts hindered the activation of transcription nuclear factor kappa B (NF-${\kappa}B$). The western blot analysis indicated that AV blocked the activation of only JNK MAP (c-Jun N-terminal kinase mitogen-activated protein) kinase not p38 MAP kinase, while VM, PG and DN did not show the activation of both JNK and p38 MAP kinases. These results suggest that AV, VM, PG, and DN have anti-inflammatory activities and thus have the potential to reduce and alleviate the symptoms of atopic dermatitis.

• Journal of the Korean Vacuum Society
• /
• v.18 no.5
• /
• pp.352-357
• /
• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• Korean Journal of Materials Research
• /
• v.13 no.6
• /
• pp.347-351
• /
• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.76-76
• /
• 2000

최근 비정질 SiC 박막은 열과 광안정도면에서 비정질 Si 박막에 비해 우수하며 공정변수들을조절함으로써 비교적 쉽고 다양하게 광학적.전기적 특성을 얻을 수 있고, 낮은 광흡수계수 및 105($\Omega$cm)1 이상의 높은 전도도를 가지고 있어 Plasma Enhanced Chemical Vapor Deposition(PECVD)을 통해 가전자제어 (Valency electron control)가 가능한 비정질 SiC 박막이 제작된 이래 대한 많은 연구가 진행되고 있다. 결정성이 없는 비정질 물질은 상대적으로 낮은 온도에서 성장이 가능하며, 특히 glow-sidcharge 방식으로 저온에서 성장시킬 수 있음에 따라 유리등과 같은 다른 저렴한 물질을 기판으로 이용, 넓은 면적의 비정질 SiC 박막을 성장시켜 여러 분야의 소자에 응용되고 있다. 비정질 SiC 박막이 넓은 에너지띠 간격을 갖는 물질이라는 점과 화학적 안정성 및 높은 경도, 비정질성에 기인한 대면적 성장의 용이성 등의 장점이외에, 원자의 성분비 변화에 의해 에너지띠 간격(1.7~3.1eV)을 조절할 수 있다는 점은 광전소자의 응용에 큰 잠재성이 있음을 나타낸다. PECVD 방식으로 성장된 비정질 SiC 박막은 태양전지의 Window층이나 발광다이오드, 광센서, 광트랜지스터 등에 응용되어 오고 있다. 본 연구에서는, RF-PECVD(ULVAC CPD-6018) 방법에 의하여 비정질 Si1-xCx 박막을 2.73Torr의 고정된 압력에서 RF 전력(50~300W), 증착온도(150~30$0^{\circ}C$), 주입 가스량 (SiH4:CH4)등의 조건을 다양하게 변화시켜가며 증착된 막의 특성을 평가하였다. 성장된 박막을 X-ray Photoelectron Spectroscopy(XPS), UV-VIS spectrophotometer, Ellipsometry, Atomic Force Microscopy(AFM)등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다.