• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.40.1-40.1
• /
• 2009

생체용 금속 임플란트의 표면개질은 생체활성화를위하여 오래 전 부터 관심을 가지고 연구해오고 있다. 최근에 표면개질을위하여 화학적 에칭, 샌드 블래스팅, 또는 나노튜브형성등 표면에 임의의 요철을 만들어서 사용하는방법이 가장 일반적으로 적용되어 상용화되고있다. 그러나 샌드블래스팅이나 화학적 에칭은 가공은 쉽지만 가공표면에 인체에 해로운 잔류물의존재로 생체적합성에 해로운 영향을 미칠 수 있다. 이러한 문제점들을 해결하기위하여 레이저를 사용하여 임플란트 표면을 개질한 예가 보고 되었다. 레이저를 사용한 표면처리 방법의큰 장점은 잔류물이 남지 않고 비교적 표면 거칠기의 제어가 용이하다. 금속합금의 표면개질에사용되는 레이저는 주로 Nd:YAG 레이저의 파장을 반으로 줄인 녹색레이저 ($\lambda$=532nm)를 사용하거나, 자외선파장영역의레이저를 사용하는 경우가 일반적으로 가장 보 편화된 가공방법으로 연구되었다. 표면의 거칠기는 수마이크로의크기와 수십나노의 크기를 갖는 표면을 생체적합적인 측면에서 요구하고 있다. 따라서 이러한 표면의 거칠기를조절할 수 있는 펨토레이저를 사용하여 표면에 균질한 표면의 텍스춰링을 통하여 그 특성을 개선할 수 있는지를 확인하는 것이 본 과제이다. 본 실험에서는 Ti합금을 진공 아크로를 이용하여 3원계합금을 제조하고 $1000^{\circ}C$에서 24시간 열처리 후 급냉(water quenching)하였다. 열처리 후 시편은 두께 2mm로 절단 하여 #2000까지 연마 후 하여 펨토 초(10-15 second) 펄스폭 대역을 갖는 레이저를 이용하여 수마이크로 크기의 미세 요철을 표면에 형성한 후, 표면의 특성을 조사해 보았다.(NRF-2009-0074672)

• Journal of the Korean Vacuum Society
• /
• v.6 no.3
• /
• pp.235-241
• /
• 1997

The crystallinity and the structure of heteroepitaxially grown $Y_2O_3$ films on the silicon substrates deposited by Ultra High Vacuum Ionized Cluster Beam(UHV-ICB) were investigated by Back-scattering Spectroscopy(BS)/channeling. The channeling minimum values, $X_{min}$, of the $Y_2O_3$ films deposited by other methods were 0.8~0.95 up to the present, which indicates amorphous or highly polycrystalline nature of the $Y_2O_3$ films. On the contrary, the channeling minimum value of heteroepitaxially grown $Y_2O_3$ films on Si(100) and Si(111) deposited by UHV-ICB are 0.28 and 0.25 respectively. These results point out fairly good crystalline quality. It is also observed that the top region of $Y_2O_3$ films have less crystalline defects than the bottom region regardless of the crystal direction of the Si substrates. The axis of $Y_2O_3$<111> epitaxially grown on Si(111) is tilt by $0.1^{\circ}$ with respect to Si<111>. That of $Y_2O_3$<110> on Si(100) is parallel to the Si<001>. The $Y_2O_3$ film on Si(100) grew with single domain structure and that on Si(111) grew with double domain structure. From the result of oxygen resonance BS/channeling, the oxygen atoms in heteroepitaxially grown $Y_2O_3$ film on Si(111) substrate have the crystallinity, but that on Si(100) shows almost channeling amorphous state.

• Journal of the Korean Vacuum Society
• /
• v.6 no.2
• /
• pp.122-128
• /
• 1997

In this study, the PVDF organic thin films were fabricated by thermal evaporation deposition which is one of the dry-processing methods. The distance from heat source to substrate was 5 cm. The substrate temperature was maintained at $30 ^{\circ}C$ during deposition. The working pressure was about $2.0\times10^{-5}$Torr and the temperature of heat source was increased at the rate of 6 to $8^{\circ}C$/min. At $270^{\circ}C$, the shutter was opened and the deposition of PVDF has stared. As the electrical field intensity increased, $\alpha$ peaks such $530\textrm{cm}^{-1},795\textrm{cm}^{-1},1182\textrm{cm}^{-1}$ decreased, and $\beta$ peaks such as $510\textrm{cm}^{-1},1273\textrm{cm}^{-1}$ increased. The intensity of $530\textrm{cm}^{-1}$ peak was stronger than that of $510\textrm{cm}^{-1}$ peak velow the 71.4 kV/cm, intensity of electrical field. This result showed the characteristic of film mainly due to $\alpha$-mode. According to these results, the molecular structure of PVDF thin film is transformed from $\alpha$-mode with TGT or TG'T to $\beta$-mode with planar zigzag structure TT, as increasing of intensity of electrical field.

• Journal of the Korean Vacuum Society
• /
• v.6 no.1
• /
• pp.9-19
• /
• 1997

The reaction mechanisms of dry cleaning with UV-excited chlorine radical for Zn, Fe and Ti trace contaminants on the Si wafer have been studied by SEM, AFM and XPS analyses in this work. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning with $Cl_2$and UV/$Cl_2$at $200^{\circ}C$ were studied by optical microscopy and SEM. In addition, changes in the surface roughness of Si wafer with the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/$Cl_2$at elevated temperature of $200^{\circ}C$. It was also found that the surface roughness of the Si wafer increased after $Cl_2$and UV/$Cl_2$cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature without surface damage by a continuous process using wet cleaning followed by UV/$Cl_2$dry cleaning.

• Composites Research
• /
• v.32 no.5
• /
• pp.229-236
• /
• 2019

In this study, the effects of the additional processing parameters on the mechanical properties of thermoplastic composites fabricated with automated fiber placement (AFP) were evaluated. Annealing and vacuum bag only processes were then performed on the manufactured thermoplastic composites, respectively. For verification, the crystallinity was measured by differential scanning calorimetry (DSC), confirming the variation of semi-crystalline thermoplastic composite according to the process conditions. The void content of thermoplastic composites was evaluated by matrix digestion method while microscopic examination confirmed the porosity distribution. The interlaminar shear strength test was conducted for three different process parameters (VBO, annealing, and no treatment). A comparison of the three tested strengths was made, revealing that the porosity value had larger effect on the mechanical properties of the thermoplastic composite compared to the degree of crystallinity. Additionally, when thermoplastic composite melted up, the pores were continuously removed under vacuum process; the removal of the pores resulted in an increase of the interlaminar shear strength.

• Journal of the Korean Vacuum Society
• /
• v.18 no.3
• /
• pp.197-202
• /
• 2009

The long term stability of ion current of QMS has been one of key parameters for monitoring gas process in vacuum. The time dependence of ionic current was monitored while the pressure of nitrogen gas was kept at a fixed pressure by introducing the gas into vacuum chamber. The chamber was evacuated to ${\sim}3{\times}10^{-9}\;Torr$ to reduce background signals before the measurement. Two ion sources were tested; one had brownish or black color due to gas contamination and the other one was new, i.e. cleaner. At a nitrogen pressure of $1{\times}10^{-5}\;Torr$, the ionic currents measured by the contaminated ion source decreased faster with time. The decrease rate was respectively ${\sim}46%$ for cleaner one and ${\sim}84%$ for contaminated one after ${\sim}5.5%$ hours. In order to test the effect of filament material on the ion current decrease, we fabricated a tungsten(W) filament which consisted of two parts; one half was made of W and the other was coated with yttria. The similar decrease of ionic currents were shown for the two types of filaments, indicating that slight change of temperature of filament due to material difference i.e. baking effect could not improve the origin of ionic current decrease. Overall the decreasing rate of ionic current is more closely associated with contaminated ion source of QMS rather than its filament materials.

• Journal of the Korean Vacuum Society
• /
• v.7 no.3
• /
• pp.221-228
• /
• 1998

Enhancement of adhesion between polymer films and metal films are obtained by forming the hydrophilic functional groups on the polymer surfaces by ion assisted reaction which uses ion beam in reactive gas environments. In ion assisted reaction, ion dose, blown gas flow rate and ion energy were changed from $5\times 10^{14}$ to $1\times 10^{17}\textrm{ions/cm}^2$, from 0 to 8 sccm, and 0.3 to 1.2 kV, respectively. Wetting angle of water on polymer films modified by $ Ar^+$ ion without blowing oxygen decreases to ~$40^{\circ}$. Contact angle of water on polymer films modified by $ Ar^+$ ion with blowing oxygen decreases to ~$20^{\circ}$, and the surface free energy increases to ~70 dyne/$\textrm{cm}^2$. However, contact angle of water on polytetraflouroethylene (PTFE) modified by ion assisted reaction increases with ion dose. The adhesion strength of metal film deposited on the polymer surface was investigated. In the case of the metal film deposited on the untreated polymers, the metal films are detached from the polymer surface. While, In the case of the metal film deposited on the polymers treated by ion assisted reaction, the metal films are strongly adhere to the polymer surfaces.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.697-698
• /
• 2013

최근에 유연한 성질을 갖는 전자기기들의 수요가 증가하면서, 그에 따라서 유연 전자기기를 뒷받침 해줄 수 있는 에너지 저장체의 유연한 성질도 중요성이 점점 부각되고 있으며 많은 연구가 진행되고 있다. 유연한 에너지 저장체의 많은 연구들이 유연한 금속 박막이나 특수 공정처리가 필요한 고분자를 이용하고 있으나, 대부분의 유연 에너지 소자들은 에너지 저장체의 성능에 비해 고온과 산 약품과 같은 환경이 필요하며, 비용과 시간이 많이 소모되고 있다. 그에 반해 섬유는 앞에서와 같이 특수 공정 처리가 따로 필요하지 않으며 상온에서도 손 쉽게 이용 가능하며, 신축성이 뛰어난 장점이 있기 때문에 효율적, 비용적으로 유연한 에너지 저장체에 유리한 소재이다. 몸에 해로운 산과 같은 약품처리의 필요도 없으며, 용매를 흡수하는 능력이 뛰어나기 때문에 용매를 이용한 도포 방법을 사용하면 다양한 물질을 폭넓게 적용 가능하다. 그리고 적용 분야에 맞춰서 섬유의 종류를 조절하면 다양한 성질을 갖는 천 기반의 에너지 저장체가 형성되며, 면 섬유가 수소 결합과 높은 반데르 발스 결합에 의해 탄소나노튜브와 결합하여 높은 에너지 밀도를 갖는 에너지 저장체를 형성하는 것을 분석한 논문들도 보고되고 있다. 면 섬유의 특수한 성질을 이용하여 에너지 저장체를 제작하고 이를 확인하기 위해서 일반 합성 섬유인 polyester와 면 섬유를 비교 제작하였으며, 용매의 형태로 손쉽게 도포 가능한 물질은 탄소 계열의 활물질들이며, 탄소 나노 튜브나 그래핀 등이 분산된 용액을 이용해 천에 도포 가능하다. 탄소 계열의 활물질들은 대표적인 슈퍼캐패시터 물질이며, 천에 도포를 함으로써 천 기반의 슈퍼캐패시터를 제작하였다. 일반 합성 섬유 polyester와 CNT를 결합한 형태의 전극은 최대 에너지 축전 용량(Maximum specific capacitance)이 53.6 F/g으로 나타났으며, 면 섬유와 CNT를 결합한 형태의 전극은 최대 에너지 축전 용량이 122.1 F/g으로 나타났다. 따라서 면 섬유에서 높은 에너지 저장 능력을 보이는 것을 실험적으로 확인하였으며, 에너지 저장 능력이 뛰어난 면 섬유를 다음 전극 디자인에서도 일률적으로 적용하였다. 슈도캐패시터의 대표적 물질인 금속 산화물인 망간 산화물(MnO2)을 3전극 도금 시스템을 이용하여 에너지 축전 용량과 에너지 밀도를 올리는 전극을 제작하였다. 특히 망간 산화물의 형태는 표면적을 극대화하기 위해서 평균 지름은 200~300 nm 정도 되는 나노 입자의 형태로 제작하였다. 그 결과, 확연하게 에너지 축전 용량이 향상되었으며, 최대 에너지 축전 용량은 282.0 F/g, 에너지전력 밀도는 14.2 Wh/kg으로 나타나서 금속 산화물의 형태가 주는 효과를 확인할 수 있었다. 하지만 나노 입자의 형태로 제작된 금속 산화물은 문제점이 발생하였다. 금속 산화물의 전기 전도성이 매우 낮기 때문에, 전기 전도성에 비례해서 전력 밀도의 값이 표현되는데, 전기 전도성이 급격히 감소하기 때문에 전력 밀도도 급격한 감소가 나타난다. 다음과 같이 전기 전도성 물질을 첨가하는 방법은 추가의 공정이 필요한 단점이 있지만 오직 기계적인 인장응력만을 가해서 에너지 밀도와 전력 밀도를 증가시키는 전극을 제작하였다. 인장응력을 섬유 기반의 전극에 가했을 시에 가닥들간의 접촉 증가와 CNT가 정렬되면서 특정 변형률(strain) 이전에서는 전기 전도성이 최대 50% 이상 증가하는 것을 확인할 수 있었으며, 선행 연구에서 보고되었다. 이를 이용해서 전기 전도성과 직결되는 전력 밀도의 양도 증가시키고 에너지 밀도의 증가 여부까지 확인한 결과 인장을 가하기 전 면 섬유의 전력 밀도와 에너지 밀도는 6.4 kW/kg and 6.1 Wh/kg으로 나타났으나 30% 변형 인장 후에는11.4 kW/kg과 7.1 Wh/kg으로 나타났다. 그리고 망간 산화물을 첨가한 전극 역시 4.9 kW/kg과 14.2 Wh/kg으로 나타났었으나 인장 이후 전력 밀도는 14.2 kW/kg, 에너지 밀도는 17.6 Wh/kg으로 확연하게 증가한 것을 확인하였다.

• Journal of the Korean Vacuum Society
• /
• v.7 no.4
• /
• pp.348-354
• /
• 1998

To investigate an influence of the thermal preheating for the substrates exerted on the heteroepilayers, the ZnTe epilayers are grown on the GaAs (100) at the substrate temperature of 450~$630^{\circ}C$ by hot wall epitaxy (HWE). For this purpose, double crystal rocking curve (DCRC) and photoluminescence (PL) are measured. The full width at half maximum of DCRC are the smallest in the ZnTe epilayers grown on the GaAs thermally etched at around both $510^{\circ}C$ and $590^{\circ}C$. However, at around $550^{\circ}C$ they increase due to the reconstruction of the atoms in the surface. And they increase due to the oxide layer at below $490^{\circ}C$ and due to the surface defects at above $610^{\circ}C$. From PL analysis, the full width at half maximum of the light hole exciton $X_{1s,th}$ and of the second-order Raman line increase at around $550^{\circ}C$. With the increasing preheating temperature, the intensities of Y-bands and of the oxygen bound exciton (OBE) peak related to an oxide layer on the GaAs surface generally decrease. From these experimental results, it's confirmed that the GaAs substrate thermally etched influences the ZnTe pilayers.

• Journal of the Korean Vacuum Society
• /
• v.6 no.3
• /
• pp.255-262
• /
• 1997

Titanium nitride (TiN) films were prepared by reactive sputter deposition in mixed gas of Ar+$N_2$. The volume percentage of $N_2$ in the working gas was chosen so as to grow stoichiometric TiN films and the substrate temperature during film growth was set from room temperature to $700^{\circ}C$. Stoichiometric $Ti_{0.5}N){0.5}$ films with (111) texture were grown at temperatures over $600^{\circ}C$, while films prepared at temperatures below $600^{\circ}C$ showed N-rich TiN. The composition X and y in the $Ti_xN_y$ films determined by XPS and RBS varied within 5% with the substrate temperature. The sheet resistance of the TiN films decreases as the substrate temperature increased. TiN film prepared at $600^{\circ}C$ showed 14.5$\Omega\Box$, and it decreased to 8.9$\Omega\Box$ after the sample was annealed at $700^{\circ}C$, 30 sec in Ar-gas ambient by RTA. By far, high quality stoichiometric TiN films by reactive sputtering in the mixed gas ambient could be prepared at substrate temperature over $600^{\circ}C$.