• Korean Journal of Crystallography
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• v.20 no.1
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• pp.1-8
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• 2009

이온산란 분광법(ISS: Ion Scattering Spectroscopy)은 표면 원자의 구조를 러더포드 후방산란법(RBS: Rutherford Backscattering Spectroscopy) 등과 같이 실공간에 대하여 직접 정보를 얻는 방법이다. 그 중에서도 산란각도를 $180^{\circ}$로 고정하여 산란이온 검출기를 설치한 직충돌 이온산란 분광법(ICISS: Impact Collision Ion Scattering Spectroscopy)은 산란된 이온의 궤적이 입사궤도와 거의 동일하기 때문에 산란궤적의 계산이 간단해지고, 최외층 뿐만 아니라 표면에서 수 층 깊이의 원자구조의 해석이 가능하다. 또한 비행시간형(TOF: Time-Of-Flight) 분석기를 채택하여 산란 이온 및 중성원자를 동시에 측정하면 입사 이온의 표면에서의 중성화에 관계 없이 산란 신호를 얻으므로 표면 원자의 결합 특성에 영향 받지 않고 사용할 수 있다. 본고에서는 ICISS의 원리, 장치, 측정방법 등을 소개한 제1편 및 반도체 표면구조, 금속/반도체 계면 등의 해석에 관하여 기술한 제2편에 이어서 세라믹 재료의 표면 원자 구조, 세라믹 박막의 원자 구조, 흡착 기체의 구조, 원소의 편석 등에 관한 연구 사례를 소개하고자 한다.

• Korean Journal of Optics and Photonics
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• v.26 no.2
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• pp.98-102
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• 2015

The radiative quantum efficiency of a solid-state laser was measured by photoacoustic spectroscopy with a PZT as the detector. The radiative quantum efficiency was about 58.3 % for a laser-diode pumped Nd:S-VAP laser under lasing conditions. The measurement of radiative quantum efficiency was presented as an effective method for the optimization of a laser resonator.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.5
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• pp.373-377
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• 2005

In this paper the gas leakage controller in processing chamber for semiconductor manufacturing is proposed. A pressure sensor is connected between the final valve and the numeric valve. A pressure sensor signal and a numeric valve signal are controlled by a proposed digital circuit module. Gas leakage condition, producing by 2nd plasticity in semiconductor process, display at LED. The proposed controller module is useful for monitoring the gas flow for preventing the critical process gas leakage.

• Journal of IKEEE
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• v.25 no.3
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• pp.578-583
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• 2021

This paper describes acceleration tests for reliability of semiconductors. It also describes AEC-Q100, international test standard for reliability of automotive semiconductors. Semiconductors can be used for dozens of years. So acceleration tests are essential to test potential problems over whole period of product where test time is minimized by applying intensive stresses. AEC-Q100 is a typical acceleration test in automotive semiconductors, and it is designed to find various failures in semiconductors and to analyze their causes of occurance. So it finds many problems in design and fabrication as well as it predicts lifetime and reliability of semiconductors. AEC-Q100 consists of 7 test groups such as accelerated environmental stress tests, accelerated lifetime simulation tests, package assembly integrity tests, die fabrication reliability tests, electrical verification tests, defect screening tests, and cavity package integrity tests. It has 4 grades from grade 0 to grade 3 based on operational temperature. AEC-Q101, Q102, Q103, Q104, and Q200 are applied to discrete semiconductors, optoelectronic semiconductors, sensors, multichip modules, and passive components, respectively.

• Journal of the Institute of Convergence Signal Processing
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• v.11 no.2
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• pp.163-168
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• 2010

This paper presents the practical implementation of an over-temperature protection system for power semiconductor devices. In the proposed system, temperature variation is provided with just using $R_{ds(on)}$ characteristics of power MOSFET, while extra device such as a temperature sensor or an over-temperature detection transistor is needed to monitor the temperature in the conventional method. The proposed protection technique is experimentally tested on IRF840 power MOSFET. The PIC microcontroller PIC16F877A is used for the implementation of the proposed protection algorithm. The built-in 10-bit A/D converter is utilized for detecting voltage variance between a drain and a source of IRF840. The induced temperature-resistance relationship based on the measured drain-source voltage, supplies a gate signal to the power MOSFET. If detected temperature's voltage exceeds any a protection temperature's voltage, the microcontroller removes the trigger signal from the power MOSFET. These test results showed satisfactory performances of the proposed protection system in term of accuracy within 1.5%.

• The Transactions of the Korea Information Processing Society
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• v.7 no.10
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• pp.3226-3235
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• 2000

The more complex and larger semiconductor integraed circuits become, the core important delay test becomes which guarantees that semiconductor integrated circuits operate in time. In this paper, we propose a new partial enhanced scan method that can generate test patterns for path delay faults offectively. We implemented a new partial enhanced scan method based on an automatic test pattern generator(ATPG) which uses implication and justification . First. we generate test patterns in the standard scan environment. And if test patterns are not generated regularly in the scan chain, we determine flip-flops which applied enhanced scan flip-flops using the information derived for running an automatic test pattern generator inthe circuti. Determming enhanced scan flip-flops are based on a fault coverage or a hardware overhead. through the expenment for JSCAS 89 benchmark sequential circuits, we compared the fault coverage in the standard scan enviroment and enhance scan environment, partial enhanced scan environment. And we proved the effectiveness of the new partial enhanced scan method by identifying a high fault coverage.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.6
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• pp.512-518
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• 2003

Position controls are very important in semiconductor manufacturing devices, machine tools Precision measuring instruments, etc. To measure the distance of movement of moving objects in minute units and the accuracy of measurement for the moving distance in these devices affect the performance of the whole devices. Therefore, in those Precision instruments, a sensing device that can measure the distance of movement with high-precision resolution is required. In this paper, a novel encoder of digital and analog hybrid type is proposed. It is shown that from this experiment a high-resolution angle measurement device can be designed by a low cost incremental encoder.

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.198-203
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• 1990

In this paper, a system has been proposed for the measurement of the spectral characteristic of semiconductor light sources driven by very short pulse currents. This system has been constituted a monochrometer of 600 groovedmm grating and of 275 mm focal length, X-Y recorder, scanning motor which enables the system to get the analog data, and amplifier coupled with peak detector. Especially, peak detector was used to convert the short pulse signal to continuous one. In order to verify the resolution with slit width, several slits were made by the hands. By using this system, the spectra of commercial LEDs, AlGaAdGaAs LD, and InGaAsPIInP BH-LD which were driven with pulse current (duty cy$e = 0.01) were measured. From these measurements, it has been shown that the proposed system has about 1 A1$\AA$ resolution and 10$\mu$W sensitivity.

• Journal of radiological science and technology
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• v.39 no.4
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• pp.577-585
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• 2016

The purpose of this study is to evaluate the accuracy of beam delivery QA software using the MLC dynalog file, about the VMAT plan with AAPM TG-119 protocol. The Clinac iX with a built-in 120 MLC was used to acquire the MLC dynalog file be imported in MobiusFx(MFX). To establish VMAT plan, Oncentra RTP system was used target and organ structures were contoured in Im'RT phantom. For evaluation of dose distribution was evaluated by using gamma index, and the point dose was evaluated by using the CC13 ion chamber in Im'RT phantom. For the evaluation of point dose, the mean of relative error between measured and calculated value was $1.41{\pm}0.92%$(Target) and $0.89{\pm}0.86%$(OAR), the confidence limit were 3.21(96.79%, Target) and 2.58(97.42%, OAR). For the evaluation of dose distribution, in case of $Delta^{4PT}$, the average percentage of passing rate were $99.78{\pm}0.2%$(3%/3 mm), $96.86{\pm}1.76%$(2%/2 mm). In case of MFX, the average percentage of passing rate were $99.90{\pm}0.14%$(3%/3 mm), $97.98{\pm}1.97%$(2%/2 mm), the confidence limits(CL) were in case of $Delta^{4PT}$ 0.62(99.38%, 3%/3 mm), 6.6(93.4%, 2%/2 mm), in case of MFX, 0.38(99.62%, 3%/3 mm), 5.88(94.12%, 2%/2 mm). In this study, we performed VMAT QA method using dynamic MLC log file compare to binary diode array chamber. All analyzed results were satisfied with acceptance criteria based on TG-119 protocol.

• Journal of the Korean Society of Radiology
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• v.14 no.7
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• pp.849-856
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• 2020

In the gamma-ray energy spectrum study, nuclide analysis through energy analysis is very important. High-purity Ge detectors, which are commonly used for gamma-ray energy measurements, are commonly used because of their high energy resolution and relatively high detection efficiency. However, in order to maintain a high energy resolution, the semiconductor detector has a problem in that it is difficult to maintain the original performance if the noise generated from the surrounding environment is not effectively blocked, and the effect of the expensive device is not achieved. Therefore, in this study, ground loop isolator (NEXT-001HDGL) was used to remove the electrical noise generated from the detector. In order to test the effect of improving energy resolution, HPGe detection device newly installed in the proton accelerator KOMAC was used. In the case of gamma-ray energy 2614 keV, the energy resolution was improved from (0.16 ± 0.02) % to (0.11 ± 0.01) %, and in the case of gamma-ray energy 662 keV of 137Cs isotope, the energy resolution was improved from (0.72 ± 0.07) % to (0.27 ± 0.03) %. This result is considered to be very useful for the gamma ray spectrum study using the HPGe detection equipment of KOMAC(Korea Multi-Purpose Accelerator Complex).