• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.893-897
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• 2004

In this paper, we studied the mechanical and thermal properties on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor. We evaluated mechanical property, thermal analysis, moisture analysis. Based on mechanical and thermal properties of the 22 kV XLPE sheet, elongation, mechanical strength, and melting point were evaluated to be 485.48 %, 1.74 kgf/$\textrm{mm}^2$ and $102.48^{\circ}C$, respectively. It was also evaluated from the mechanical and thermal properties of 154 kV XLPE sheet that elongation, mechanical strength, and melting point are 507.81 %, 1.8 kgf/$\textrm{mm}^2$, $106.9^{\circ}C$, respectively. A region shows a rapid increase in tension strength, and B region only shows increase in elongation under 1.0 kgf/$\textrm{mm}^2$, C region shows increase in both elongation and tension strength. Difference of melting point came from the chain of XLPE polymer and the difference of crystallization. Moisture density of semiconductor showed 800 ∼ 1200 ppm before extrude, 14000 ∼24000 ppm after extrude. These values were higher than the moisture density of XLPE (300∼560) ppm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.301-307
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• 2004

To improve mean-life and reliability of power cable in this paper, we have investigated stress-strain and smoothness showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were $400(Kgf/cm^2)$ and 600[%]. In addition tests of stress-strain were progressed by aging specimens at air oven. Finally we wished to look for protrusion of specimens by using smoothness tester. According to increasing the content of carbon black from this experimental result, yield stress was increased, while strain was decreased. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. Lastly surface of specimens smoothed generally.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.159-159
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• 2008

투명전도체 (transparent conducting oxides: TCOs) 는 일반적으로 $10^3\Omega^{-1}Cm^{-1}$의 전도도, 가시광 영역에서 80%이상의 투명성을 가지는 재료로서, 액정 박막 표시 장치(TFT-LCD), 광기전성 소자, 유기 발광 소자, 에너지 절약 창문, 태양전지(sollar cell) 등 전극으로 사용되고 있다. 최근에는 TCO의 전도도특성을 조절하여 반도성특성을 가진 투명 산화물 반도체(transparent oxide semiconductor: TOS) 을 이용한 박막 트랜지스터 연구가 활발히 진행 중이다. 기존의 실리콘을 기반으로 하는 박막 트랜지스터의 낮은 이동도, 불투명성의 특성을 가지고 있지만, 산화물 박막트랜지스터는 높은 이동도를 발현 할 수 있을 뿐만 아니라, 넓은 밴드갭 에너지를 갖는 산화물을 이용하므로 투명한 특성도 발현 할 수 있어 차세대 디스플레이의 구동소자로서 응용연구가 되고 있다. 이에 본 연구에서는 박막트랜지스터 channel layer로서의 Indium-Tin-Zinc oxide 적용특성을 조사하였다. Indium, Tin, Zinc 의 혼합비율을 다양하게 조절하여 타겟을 제작하였다. 이를 RF magnetron sputtering 를 이용하여 박막으로 성장시켰으며, 기판으로는 glass 기판을 사용하였다. 박막 성장시 아르곤과 산소의 비율을 다양하게 조절하였다. 성장시킨 박막은 Hall effect, Transmittance, Work function, XRD등을 이용하여 전기적, 광학적, 구조특성을 평가하였다. Indium-Tin-Zinc Oxide(ITZO) 을 channel layer로 사용하여 Thin-film transistor 을 제작하여, TFT의 I-V 및 stability특성을 평가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.119-125
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• 2013

In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.3
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• pp.1-9
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• 1973

Gallium phosphide light emitting diode (LED) has been fabricated first time for pilot lamp and numeric display purposes. Bright red light is obtained in forward bias at very low current of one to five mA. A typical p-n junction is formed by liquid phase epitaxial growth on a n-type gallium physphide substrate. The crystal growth is achieved at about 1300$^{\circ}$K after the equilibrium of the gallium solution followed by tipping operation. The ohmic contact is made by wire bonding by thermal compression technique. The entire process is well fit for laboratory scale to fabricate a few hundred diodes for mainly demonstration purpose. For mass production, a large sum of the capital investment is required. The great merit of gallium phosphide LED is at low current operation, and green light emission is also obtainable by nitrogen doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.208-209
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• 2005

바나듐 산화물은 반도성-금속성으로 상전이 하는 CTR특성의 대표적인 산화물로 상전이 온도인 68$^{\circ}C$에서 저항의 급변 특성을 보인다. 여기에 Fe, Ni, Mo, Ti, W과 같은 금속성 산화물을 첨가함에 따라 상전이온도를 움직일 수 있다. 그중 $WO_3$를 첨가함으로써 상전이온도를 상온까지 낮출 수 있다. Inorgnic sol-gel 법에 의해 바나듐-텅스텐 sol을 제조 하였으며, 제조된 sol을 기판에 코팅한 후 환원분위기에서 열처리 하여 막을 얻었다. 온도-저항 특성 측정 결과 순수 바나듐 막은 상전이 온도는 68$^{\circ}C$ 전기저항 감소폭은 $10^4$order 이였으나 바나듐-텅스텐막의 상전이 온도는 38$^{\circ}C$, 전기저항 감소폭은 $10_{15}$order 로 감소함을 확인 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.147-148
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• 2005

In this work, recovery of semiconductive silicone rubber on oxygen plasma treatment was investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, surface methyl groups is removed and an oxidized layer containing Si atoms bound to 3 or 4 oxygens appears. The surface is later covered by a very thin layer due to migration of low-molecular-weight components from the bulk, resulting in decreasing the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber these results are probably due to reorientation of polar groups or migration of low-molecular-weight.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.868-872
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• 2006

In this work, the effects of the corona treatment on surface properties of semiconducting silicone rubber were investigated in terms of contact angles, ATR-FTIR(Attenuated total reflection fourier transform infrared spectroscopy) and XPS(X-ray photoelectron spectroscopy). And the adhesive characteristics were studied by measuring the T-peel strengths. Based on chemical analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and C-OH on semiconducting silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiOx,\;x=3{\sim}4$. The Corona treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.49-55
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• 2013

In this paper, semiconducting shield specimens for a DC cable os fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ration of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.