• Current Photovoltaic Research
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• v.7 no.4
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• pp.97-102
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• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.204-210
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• 2020

ZnO thin films are of considerable interest because they can be customized by various coating technologies to have high electrical conductivity and high visible light transmittance. Therefore, ZnO thin films can be applied to various optoelectronic device applications such as transparent conducting thin films, solar cells and displays. In this study, ZnO rod and thin films are fabricated using aqueous chemical bath deposition (CBD), which is a low-cost method at low temperatures, and environmentally friendly. To investigate the structural, electrical and optical properties of ZnO for the presence of citrate ion, which can significantly affect crystal form of ZnO, various amounts of the citrate ion are added to the aqueous CBD ZnO reaction bath. As a result, ZnO crystals show a nanorod form without citrate, but a continuous thin film when citrate is above a certain concentration. In addition, as the citrate concentration increases, the electrical conductivity of the ZnO thin films increases, and is almost unchanged above a certain citrate concentration. Cu(In,Ga)Se₂ (CIGS) solar cell substrates are used to evaluate whether aqueous CBD ZnO thin films can be applicable to real devices. The performance of aqueous CBD ZnO thin films shows performance similar to that of a sputter-deposited ZnO:Al thin film as top transparent electrodes of CIGS solar cells.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.10
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• pp.771-776
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• 2017

The cover glass of mobile displays and photovoltaic cells needs a functional coating, such as an anti-reflection and self-cleaning coating. Numerous studies have been conducted on the engineering application of biomimetic functional surfaces, such as moth eye and lotus leaf Anti-reflection coantings of silica nanoparticles could enhance the light transmittance. $TiO_2$ photocatalyst coatings have been applied to self-cleaning functional films. In this study, transparent hydrophobic anti-reflective coatings consisting of thin layers of $SiO_2/TiO_2$ nanoparticles were fabricated on a slide glass substrate by the sol-gel process and dip-coating process. The dependence of the surface morphology of the functional coatings was investigated by the atomic force microscopy (AFM), contact angle measurement, and UV-visible spectroscopy. It was found that the coating of $TiO_2$ nanoparticles exhibited a high average transmittance comparable to that of the bare slide glass substrate in the visible light range. The bi-layered functional coating of 7 nm $SiO_2$/7nm $TiO_2$ nanoparticles exhibits a transparent hydrophobic surface with a contact angle of $110^{\circ}$ and an improvement of the average transmittance of 2.3% compared to the bare slide glass substrate in the visible light range.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.202-202
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• 2012

유연성 투명 전도막은 현대 전자산업의 발전에 있어 필수적인 부품소재로서, 가시광선의 투과율이 80% 이상이고 면저항이 $100{\Omega}/sq.$ 전후이며 휘거나 접히고 나아가 두루마리의 형태로도 응용이 가능한 소재를 일컫는다. 이러한 유연성 투명 전도막은 차세대 정보디스플레이 산업 및 유비쿼터스 사회의 중심이 되는 유연성 디스플레이, 터치패널, 발광다이오드, 태양전지 등 매우 다양한 분야에 응용이 기대된다. 이러한 이유로 고 신뢰성 유연성 투명 전도막 개발기술은 차세대 산업에 있어서의 핵심기술로 인식되고 있다. 현재로서는 인듐 주석 산화물(indium tin oxide; ITO) 및 전도성 유기고분자를 사용하여 투명 전도막을 제조하고 있으나, ITO 박막의 경우 인듐 자원의 고갈로 인한 가격상승 및 기판과의 낮은 접착력, 열팽창계수의 차이로 인한 공정상의 문제, 산화물 특유의 취성으로 인한 유연소자로서의 내구성 저하 등의 문제가 제기되고 있다. 전도성 유기고분자의 경우는 낮은 전기전도도와 기계적강도, 유기용매 처리 등의 문제점이 지적되고 있다. 따라서 높은 전기전도도와 투광도 뿐만 아니라 유연성을 지니는 재료의 개발이 요구되고 있는 실정이다. 최근 이러한 재료로서 그래핀(graphene)과 탄소나노튜브(carbon nanotube; CNT)를 중심으로 하는 탄소나노재료가 주목받고 있으며 많은 연구가 활발히 진행되고 있다. 본 연구에서는 열화학기상증착법(thermal vapor deposition; TCVD)으로 합성된 그래핀 및 CNT를 이용하여 탄소나노재료 복합체 기반의 유연성 투명 전도막을 제작하고 그 특성을 평가하였다. 그래핀과 CNT합성을 위한 기판으로는 각각 300 nm 두께의 니켈과 1 nm 철이 증착된 실리콘 웨이퍼를 이용하였으며, 원료가스로는 메탄(CH4)과 아세틸렌(C2H2)등의 탄화수소가스를 이용하였다. 그래핀의 경우 원료가스의 유량, 합성온도, 냉각속도를 변경하여 대면적으로 두께균일도가 높은 그래핀을 합성하였으며, CNT의 경우 합성시간을 변수로 길이 제어합성을 도모하였다. 합성된 그래핀은 식각공정을, CNT는 스프레이 증착공정을 통해 고분자 기판(polyethylene terephthalate; PET) 위에 순차적으로 전사 및 증착하여 탄소나노재료 복합체 기반의 유연성 투명 전도막을 제작하였다. 제작된 탄소나노재료 복합체 기반의 유연성 투명 전도막은 물리적 과부하를 받았을 때 발생할 수 있는 유연성 투명 전도막의 구조적결함에 기인하는 전도성 저하를 보상하는 특징이 있어, 그래핀과 탄소나노튜브 각각으로 제조된 유연성 투명 전도막보다 물리적인 하중이 반복적으로 인가되었을 때 내구성이 향상되는 효과가 있다. 40% 스트레인을 반복적으로 인가하였을 때 그래핀 투명 전도막은 20 사이클 이후에 면저항이 $1-2{\Omega}/sq.$에서 $15{\Omega}/sq.$ 이상으로 급증한 반면 그래핀-CNT 복합체 투명 전도막은 30사이클까지 $1-2{\Omega}/sq.$ 정도의 면저항을 유지하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.28-28
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• 2011

우리나라의 주력산업인 반도체 및 디스플레이의 경우 그 생산 설비의 1/3이상이 진공 장비이며 진공 공정을 통해 만들어진다. 이들 산업 분야에서는 우리나라가 세계 최고의 생산 기술을 가지고 있으므로 자체적인 기술 개발 확보가 중요하다. 최근에는 기존에 개발되어 있는 장비의 성능을 뛰어넘어야 하는 공정 기술력이 요구되면서, 진공 공정 기술 개발이 매우 중요한 이슈가 되었다. 반도체나 디스플레이 산업 등 기존 주력산업의 전후방 산업의 경쟁력 강화 측면에서뿐 아니라 태양전지, LED 등 진공기술을 이용한 신성장 동력 산업의 생산 시스템 경쟁력 확보 측면에서도 진공 공정 기술 개발 중요성은 매우 크다. 지금까지 양산에 적용되는 증착, 식각, 확산 등 진공 공정 운영은, 사전 시험을 통해 얻은 최적 공정의 입력 파라미터들을 정해 놓고 그대로 공정을 진행한 뒤, 생산되어 나오는 제품의 상태를 사후 측정하여 공정 이상 여부를 점검하고 미세 조정하는 형태로 진행되고 있다. 실질적으로 현재 진행 중인 진공 공정에 대한 직접적인 정보가 없으므로 공정 중 발생되는 문제들에 대한 대처는 그 공정이 끝난 후에 이루어지는 상황이다. 공정 미세화 및 대구경화에 따라 기존의 wafer to wafer 제어 개념 보다 발전된 개념으로 센서 기반 실시간 공정 진단 제어 기술의 필요성이 대두되었으며 이를 위한 오류 인식 및 예지기술 (Fault Detection & Classification, FDC) 그리고 이 정보를 이용한 첨단 제어 기술(Advanced Process Control, APC)을 개발하는 노력들이 시작되었다. 한국표준과학연구원에서는 수요기업인 대기업과 장비업체, 센서 개발 중소기업 및 학교 연구소와 공동으로 진공 공정 실시간 측정 진단 제어와 관련된 연구를 하고 있다. 진공 공정 환경측정 기술, 플라즈마 상태 측정 기술, 진공 공정 중 발생하는 오염입자 측정 원천 기술 개발과 이를 구현하기 위한 센서 개발, 화학 증착 소스 및 진공 공정 부품용 소재에 대한 평가 플랫폼 구축, 배기 시스템 진단기술 개발 등 현재 진행되고 있는 기술 개발 내용과 동향을 소개한다. 진공 공정 실시간 측정 기술이 확보되면 차세대 반도체 제작에 필요한 정밀 공정 제어가 가능해지고, 공정 이상에 바로 대응 혹은 예방 할 수 있으며, 여유분으로 필요 이상으로 투입되던 자원(대기시간, 투입 재료, 대체용 장비)을 절감하는 등 생산성을 향상을 기대할 수 있다. 또한 진공 환경에서 이루어지는 박막 증착, 식각 공정 과정에 대한 이해가 높아지고, 공정을 개발하고 최적화하는데 유용한 정보를 제공할 수 있으므로, 기존 장비와 차별화된 경쟁력을 가진 고품위 진공 장비 및 부품 개발에 기여할 수 있을 것으로 기대하고 있다.

• Korean Journal of Materials Research
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• v.22 no.5
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.501-507
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• 2010

Changes in surface morphology and roughness of dc sputtered ZnO:Al/Ag back reflectors by varying the deposition temperature and their influence on the performance of flexible silicon thin film solar cells were systematically investigated. By increasing the deposition temperature from $25^{\circ}C$ to $500^{\circ}C$, the grain size of Ag thin films increased from 100 nm to 1000 nm and the grain size distribution became irregular, which resulted in an increment of surface roughness from 6.6 nm to 46.6 nm. Even after the 100 nm thick ZnO:Al film deposition, the surface morphology and roughness of the ZnO:Al/Ag double structured back reflectors were the same as those of the Ag layers, meaning that the ZnO:Al films were deposited conformally on the Ag films without unnecessary changes in the surfacefeatures. The diffused reflectance of the back reflectors improved significantly with the increasing grain size and surface roughness of the Ag films, and in particular, an enhanced diffused reflectance in the long wavelength over 800 nm was observed in the Ag back reflectors deposited at $500^{\circ}C$, which had an irregular grain size distribution of 200-1000 nm and large surface roughness. The improved light scattering properties on the rough ZnO:Al/Ag back reflector surfaces led to an increase of light trapping in the solar cells, and this resulted in a noticeable improvement in the $J_{sc}$ values from 9.94 mA/$cm^2$ for the flat Ag back reflector at $25^{\circ}C$ to 13.36 mA/$cm^2$ for the rough one at $500^{\circ}C$. A conversion efficiency of 7.60% ($V_{oc}$ = 0.93, $J_{sc}$ = 13.36 mA/$cm^2$, FF = 61%) was achieved in the flexible silicon thin film solar cells at this moment.

• Journal of the Korean Solar Energy Society
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• v.28 no.2
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• pp.58-63
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• 2008

This study has analysed power output characteristics of transparent thin-film PV module depending on incidence angle and azimuth. The experiment results showed power outputs of transparent thin-film PV module applied to full-scale mock up model on slope of $90^{\circ},\;30^{\circ},\;0^{\circ}$ to the south. The simulation results was evaluated power outputs of transparent thin-film PV module depending on incidence angle and azimuth after calibrating the experimental and computed data. As a result. the best power output performance of transparent thin-film PV module was obtained at slope of $30^{\circ}$ to the south, producing the annual power output of 977kWh/kWp. The annual power output data demonstrated that the PV module with a slope of $30^{\circ}$ could produce a 68 % higher power output than that with a slope of $90^{\circ}$ with respect to the inclined slope of the module, Furthermore, the PV module facing south showed a 22 % higher power output than that facing to the east in terms of the angle of the azimuth, Specipically. the varying power output with incidence angle of PV module can be resulted from the influence of incidence angle modifier of glass on PV module. That is, the solar energy transmission can be reduced as an increase of incidence angle of PV module. Therefore, when the inclined slope of the PV module was over $70^{\circ}$ there was a significant reduction of power output, and this was caused by the decrease of solar energy transmission in the transparent thin-film PV module.