• Membrane Journal
• /
• v.4 no.2
• /
• pp.96-105
• /
• 1994

Theoretical model for membrane transport of large polye!ectroiyte is presented. When the electric field is applied, the molecular conformation quickly orients in the field direction showing overshooting orientation. the predicted dependence of overshoot time and orientation upon field intensity and molecular size aids to understand the dynamic motion of molecules in membrane transport. The dynamics of the overshoot is associated with self-trapping conformations of molecule. The understanding of these effects supports evidences for the electrophoretic filtration of polydectrolyte in the polymeric membrane. This paper shows one example for molecular study in the theoretical review paper of membrane transport.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2014.10a
• /
• pp.765-768
• /
• 2014

본 연구에서는 비대칭 이중게이트 MOSFET의 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심의 변화에 대하여 분석하고자한다. 비대칭 이중게이트 MOSFET는 상하단 게이트 산화막의 두께를 다르게 제작할 수 있어 문턱전압이하 영역에서 전류를 제어할 수 있는 요소가 증가하는 장점이 있다. 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심을 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였다. 이때 전하분포는 가우스분포함수를 이용하였다. 하단게이트 전압, 채널길이, 채널두께, 이온주입범위 및 분포편차를 파라미터로 하여 문턱전압 및 전도중심의 변화를 관찰한 결과, 문턱전압은 상하단 게이트 산화막 두께 비에 따라 큰 변화를 나타냈다. 특히 채널길이 및 채널두께의 절대값보다 비에 따라 문턱전압이 변하였으며 전도중심이 상단 게이트로 이동할 때 문턱전압은 증가하였다. 또한 분포편차보단 이온주입범위에 따라 문턱전압 및 전도중심이 크게 변화하였다.

• Journal of the Korean GEO-environmental Society
• /
• v.15 no.1
• /
• pp.13-23
• /
• 2014

Geotechnical evaluation on the reactive drain pile which can achieve simultaneously both the soft ground improvement and the remediation of contaminated pore water in reclamation site was performed. Applicability of steel-making slag used as a inside reactive material was confirmed. To investigate the consolidation characteristics of the soft ground improved by reactive drain pile, testing devices to form and install the reactive drain pile were developed and laboratory tests were performed according to the existence of outside sand drain and the length of impermeable barrier. Test results showed that the consolidation time was decreased as the shortening of impermeable barrier. However, the effect of outside sand drain on consolidation time was dominant compared with the length of impermeable barrier.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.4
• /
• pp.67-72
• /
• 1989

Room Temperature Plasma Nitridation of silicon was investigated as a new LOCOS (local oxidation of silicon) process in order to reduce the bird's beak length. In $N_2$ plasma formed by 100kHz, 400W AC power, a thin silicon nitride film (<100${\AA}$) was uniformly grown on a silicon substrate. SEM studies showed that the nitride layer formed by this method can effectively protect the silicon from oxidation and reduce the bird's beak length to $0.2{mu}m$ when 4000${\AA}$ field oxide is grown. This is a considerable improvement comparing with 0.7${mu}m,$ the bird's beak, for the conventional LOCOS process using a thick LPCVD nitride. No appreciable crystalline defect could be found around the bird's beak with SEM cross-section afrer Secco etch. Leakage current tests were carried out on the $N^+/P^-$ well and $P^+/N^-$ well diodes formed by this new LOCOS process. The electrical tests indicate that this new process has electrical properties similar or superior to those of the conventional LOCOS process.

• Journal of Applied Biological Chemistry
• /
• v.59 no.3
• /
• pp.221-225
• /
• 2016

Tolaasin is a pore-forming peptide toxin produced by Pseudomonas tolaasii and causes a brown blotch disease by disrupting membrane structures of cultivated mushrooms. The mechanism and characteristics of tolaasin pore formation are not known in detail; however, tolaasin pores have been demonstrated in the artificial lipid bilayer. Since the tolaasin pore appeared less frequently and unstable in lipid bilayer, a mismatch between the length of tolaasin pore and the thickness of lipid membrane had been suggested. Therefore, tolaasin-induced hemolyses were measured by the additions of phospholipids composed of various fatty acids with different carbon numbers. When phosphatidylethanolamines made with two decanoic acids (C10:0, 1,2-didecanoyl-sn-glycero-3-phosphoethanolamine; DDPE), myristic acids (C14:0, 1,2-dimyristoyl-sn-glycero-3-phosphoethanolamine), and stearic acids (C18:0, 1,2-distearoyl-sn-glycero-3-phosphoethanolamine) were added to the buffer containing RBCs and tolaasin peptides, DDPE facilitated the tolaasin-induced hemolysis while the other two phospholipids showed no effects. At various concentrations of DDPE, the tolaasin-induced hemolysis was stimulated as a dose-dependent manner. The phospholipids composed of mediumchain fatty acids stabilize the tolaasin pore probably by binding between the pore structure and membrane phospholipids and making the membrane thickness thinner around the pore. These results showed that tolaasin molecules make more stable pores in the membrane made with phospholipids composed of medium length fatty acids, suggesting that the length of tolaasin pore is a little shorter than the thickness of RBC membrane.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.3
• /
• pp.177-184
• /
• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• The Korean Journal of Zoology
• /
• v.37 no.2
• /
• pp.203-212
• /
• 1994

별불가사리 난자형성 중 난모세포(직경 7-l7O Um) 표면의 구조적 변화를 투과 전자현미경으로 관찰하였다. 직경 25-855 Um의 난모세포에서 'endocvtosis'와 관련된 구조인 coated pit, coated vesicle과 내포소낭이 존재하였으며. 내포소낭은 난황립과 융합하였다. 특히, 이러한 융합은 직경 130-155 Um의 난모세포에서 많이 관찰되었다 난자형성 초기에 난모세포의 미세융모는 세포막을 따라 무질서하게 분포하고. 인접한 세포와 맞닿아 있었다. 직경 15 Um에서 65 Um에 이르는 난모세포는 세포막 부위에 따라서 미세융모의 굵기와 길이, 그리고 형태가 다르게 나타났고, 직경 100 Um 이상의 난모세포에서는 잘 발달된 미세음모가 난뢍층에 존재하였다 여포세포로부터 나온 돌기는 직경 7 Um의 난모세포와 난자형성 후기의 난모세포에서 난황층을 윤고 세포막과 닿아 'junctional complex'를 형성하였다. 이와같은 난모세포 표면의 다양한 구조적 변화는 난모세포의 세포막을 통한 물질투과 기능의 분화와 관련이 있을 것으로 생각된다.

• Proceedings of the Membrane Society of Korea Conference
• /
• 2004.11a
• /
• pp.125-128
• /
• 2004

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2014.10a
• /
• pp.745-748
• /
• 2014

본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널길이에 대한 문턱전압이하 스윙의 변화에 대하여 분석하였다. 문턱전압이하 스윙은 트랜지스터의 디지털특성을 결정하는 중요한 요소로서 채널길이가 감소하면 특성이 저하되는 문제가 나타나고 있다. 이러한 문제를 해결하기 위하여 개발된 DGMOSFET의 문턱전압이하 스윙의 채널길이에 대한 변화를 채널두께, 산화막두께, 상하단 게이트 전압 및 도핑농도 등에 따라 조사하고자 한다. 특히 하단 게이트 구조를 상단과 달리 제작할 수 있는 비대칭 DGMOSFET에 대하여 문턱전압이하 스윙을 분석함으로써 하단 게이트 전압 및 하단 산화막 두께 등에 대하여 자세히 관찰하였다. 문턱전압이하 스윙의 해석학적 모델을 구하기 위하여 포아송방정식에서 해석학적 전위분포모델을 유도하였으며 도핑분포함수는 가우스분포함수를 사용하였다. 결과적으로 문턱전압이하 스윙은 상하단 게이트 전압 및 채널도핑농도 그리고 채널의 크기에 매우 민감하게 변화하고 있다는 것을 알 수 있었다.

• Journal of the Korean Vacuum Society
• /
• v.4 no.S1
• /
• pp.7-12
• /
• 1995