• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.7-13
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• 1995

A new FET type semiconductor pressure sensor (PSFET : pressure sensitive field effect transistor) was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, $5000{\AA}$ thick, was deposited on a gate oxide of FET by RF magnetron sputtering. The deposition conditions to obtain a c-axis poling structure were substrate temperature of $300^{\circ}C$, RF power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET device showed good linearity and stability in the applied pressure range($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$).

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.53-57
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• 1992

We report the crystal growth and the electro-optic characteristics of $CdS_{1-x}Se_{x}$ thin films. $CdS_{1-x}Se_{x}$ thin films wire deposited on the alumina plate by electron beam evaporation technique in pressure of $1.5{\times}10^{-7}$ torr, voltage of 4kV, current of 2.5mA and substrate temperature of $300^{\circ}C$. The deposited $CdS_{1-x}Se_{x}$ thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. $CdS_{1-x}Se_{x}$ photoconductive films showed high photoconductivity after annealing at $550^{\circ}C$ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allowable power dissipation and response time.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.35-40
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• 1996

The polymeric membrane pH sensor based on HDBA(hexyldibenzylamine) or HDPA(hexyldiphenylamine) as hydrogen ion carrier was prepared and electrochemical characterization for the variation of a temperature and membrane thickness were studied on. The sensor based on HDPA was not responded selectively to hydrogen ion. The sensor based on HDBA was responded linearly to hydrogen ion in the range of pH 2 - pH 10, it showed the fast response time of 30 - 50sec. and Nernstian slope of 53.6mV/pH. The interfering effect on alkali and alkaline earth metal ions of pH sensor were lower than glass pH sensor. There was shown a good reproducibility and stability with the precision of 2 - 4mV (${\pm}0.1mV$).

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.117-122
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• 2005

Electron Beam Physical Vapor Deposition (EB-PVD) is a typical technology for thermal barrier coating with Yttria Stabilized Zirconia (YSZ) on aero gas turbine engine. In this study EB-PVD method was used to fabricate dense YSZ film on NiO-YSZ as a electrolyte of Solid Oxide Fuel Cell (SOFC). Dense YSZ films of -10 $\mu$m thickness showed nano surface structure depending on deposition temperature. Electrical conductivities of YSZ film and electric power density of the single cell were evaluated after screen- printing $LaSrCoO_3$ as a cathode.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.95-101
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• 1997

Using aluminum powder with average particle size of 22.1 $\mu$m, aluminum compact made by Pressureless Powder Packing Method showed 52% green density. The activation energy of aluminum oxidation was cal-culated from the weight change of TG, and it was varied in the range of 16~64 kJ/mol. It was found from the variation of the activation energy and the observation of the microstructure that oxidation was de-pendent on the destruction of oxide film and the melt-out of aluminum. Aluminum compact was reaction-bonded at 1000~140$0^{\circ}C$ for 4~60hrs, and oxidation was dependent on temperature rather than time. Reac-tion-bonded aluminum oxide at 140$0^{\circ}C$ for 60hrs showed 92% oxidation percent. It was sintered at 1$600^{\circ}C$ for 15hrs and the sintered body showed 62% relative density.

• Journal of the Korean Society of Food Science and Nutrition
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• v.17 no.4
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• pp.371-375
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• 1988

Tubular ultrafiltration membranes were used to investigated mass transfer characteristics of waste cheese whey. The effects of bulk concentration and flow velocity on permeat flux, mass transfer coefficient and apparent rejection coefficient were measured. Mass transfer coefficient was increased linearly with increasing flow velocity, and following relationship between mass transfer coefficient(k) and linear velocity(u) was obtained. $k=0.87{\times}10^{-5}u^{1-1}$ It is interjecting to note that plots for all linear velocity tend to converge to the same point for zero permeating flux, and the maximum bulk concentration that can be achieved with cheese whey extracts was 38(w/v %). In general, membrane rejection coefficient increased with increasing flow velocity and the rejection coefficients of cheese whey solution and that of lactose in cheese whey solution were obtained $0.40{\sim}0.65$, $0.15{\sim}0.30$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.397.2-397.2
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• 2014

유기 발광 다이오드 (OLED)의 상용화를 위해 해결해야할 기술적 문제 중하나는 장수명이다. OLED에 적용된 유기물 층은 수분과 산소에 취약하여 소자 수명을 단축하는 요소로 작용하는데, 이를 해결하기 위해 유기물을 보호하며, 유기물 내로 침투되는 수분과 산소를 제어하기 위한 보호 층의 증착이 필수적이다. 필수적이다. 본 연구에서는, 사이클 화학 기상 증착법(C-CVD)을 이용하여 SiN/SiCN/SiN 구조의 무기 박막을 증착하여 유기물 보호층으로서의 적용 가능성을 제시하고자 한다. 이 때 각층의 두께는 각 각 10 nm이다. 증착된 다층 무기 박막은 비정질 상으로 수분 침투 보호막으로서 적당하다. 다층 무기 박막의 수분에 대한 저항성은 칼슘을 이용한 투과도 변화를 이용하여 측정하였다. 칼슘을 이용한 투과도 측정을 위해 고분자 PEN 필름위에 칼슘을 60nm 두께로 증착 시키고, 이어서 무기물인 SiN/SiCN/SiN의 다층 박막을 확산 방지층으로 증착 하였다. 제작된 소자는 온도 $85^{\circ}C$, 상대습도 85%의 가혹 조건에서 시간에 따른 표면 변화 및 투과도의 변화를 측정하였다. SiN/SiCN/SiN 구조를 갖는 무기 박막 층의 투습도는 3000시간까지는 $3.2{\times}10-5g/m/day$를 유지하였다. 이는 OLED 소자의 상용화를 위한 요구 조건에 근접한 값이다. 그러나 투습도는 측정 시간이 6000시간이 지난 후에 급격 증가하는데 이것은 30nm 두께의 SiN/SiCN/SiN의 확산 방지층에 임계 수명이 존재 한다는 것을 의미 한다고 할 수 있다. C-CVD 기술에 의해 제조된 다층 무기 박막 보호 층의 경계면에서 각 층간의 intermixing 현상이 관측되었으며, 이는 무기물 층의 결함과 핀 홀을 통해 내부로 확산 되는 수분의 침투 경로를 효과적으로 제어할 수 있는 방법이다. 본 연구 결과는 유연 기판 상에 제작된 OLED 소자에 적용 가능한 기술로서 소자 수명의 연장 뿐만 아니라 경량화에도 기여할 수 있는 기술이다.

• Journal of the Korean Applied Science and Technology
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• v.29 no.4
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• pp.594-598
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• 2012

Polymer electrolyte membrane fuel cell(PEMFC) performance degrades seriously when sulfur dioxide and hydrogen sulfide are contaminated in the fuel gas at anode and air source at cathode, respectively. This paper reveals the effect of the combined sulfur impurity poisoning on both PEMFC cathode and anode parts through measuring electrical performance on single FC operated under 1 ppm to 10 ppm impurity gases. The severity of $SO_2$ and $H_2S$ poisoning depended on concentrations of impurity gases under optimum operating conditions($65^{\circ}C$ of cell temperature and 100 % relative humidity). Sulfur adsorption occured on the surface of Pt catalyst layer on MEA. In addition, MEA poisoning by impurity gases were cumulative. After four consecutive poisonings with 1, 3, 5 to 10 ppm, the fuel cell performance of PEMFC was decrease upto 0.54 V(76 %) from 0.71 V.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.131-145
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• 1992

This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.