• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.37-45
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• 2004

Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.65-74
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• 2013

The through-silicon via (TSV) technology is essential for 3-dimensional integrated packaging. TSV technology, however, is still facing several reliability issues including interfacial delamination, crack generation and Cu protrusion. These reliability issues are attributed to themo-mechanical stress mainly caused by a large CTE mismatch between Cu via and surrounding Si. In this study, the thermo-mechanical reliability of copper TSV technology is investigated using numerical analysis. Finite element analysis (FEA) was conducted to analyze three dimensional distribution of the thermal stress and strain near the TSV and the silicon wafer. Several parametric studies were conducted, including the effect of via diameter, via-to-via spacing, and via density on TSV stress. In addition, effects of annealing temperature and via size on Cu protrusion were analyzed. To improve the reliability of the Cu TSV, small diameter via and less via density with proper via-to-via spacing were desirable. To reduce Cu protrusion, smaller via and lower fabrication temperature were recommended. These simulation results will help to understand the thermo-mechanical reliability issues, and provide the design guideline of TSV structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.10
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• pp.7071-7077
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• 2015

In recently, the demand of cover-glass is increased because smart phone, tablet pc, and electrical device has become widely used. The display of mobile device is enlarged, so it is necessary to have a high strength against the external force such as contact or falling. In fabrication process of cover-glass, a grinding process is very important process to obtain high strength of glass. Conventional grinding process using a grinding wheel is caused such as a scratch, chipping, notch, and micro-crack on a surface. In this paper, polishing system using a abrasive film was developed for a grinding of mobile cover-glass. To evaluate structural stability of the designed system, finite element model of the polishing system is generated, and multi-body dynamic analysis of abrasive film polishing machine is proposed. As a result of the analysis, stress and displacement analysis of abrasive film polishing system are performed, and using laser displacement sensor, structural stability of abrasive film polishing system is confirmed by measuring displacement.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.7-15
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• 2012

Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.55-65
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• 2020

The use of underfill materials in semiconductor packages is not only important for stress relieving of the package, but also for improving the reliability of the package during shock and vibration. However, in recent years, as the size of the package becomes larger and very thin, the use of the underfill shows adverse effects and rather deteriorates the reliability of the package. To resolve these issues, we developed the package using a solid epoxy material to improve the reliability of the package as a substitute for underfill material. The developed solid epoxy was applied to the package of the application processor in smart phone, and the reliability of the package was evaluated using thermal cycling reliability tests and numerical analysis. In order to find the optimal solid epoxy material and process conditions for improving the reliability, the effects of various factors on the reliability, such as the application number of solid epoxy, type of PCB pad, and different solid epoxy materials, were investigated. The reliability test results indicated that the package with solid epoxy exhibited higher reliability than that without solid epoxy. The application of solid epoxy at six locations showed higher reliability than that of solid epoxy at four locations indicating that the solid epoxy plays a role in relieving stress of the package, thereby improving the reliability of the package. For the different types of PCB pad, NSMD (non-solder mask defined) pad showed higher reliability than the SMD (solder mask defined) pad. This is because the application of the NSMD pad is more advantageous in terms of thermomechanical stress reliability because the solderpad bond area is larger. In addition, for the different solid epoxy materials with different thermal expansion coefficients, the reliability was more improved when solid epoxy having lower thermal expansion coefficient was used.