• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.463-463
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• 2008

The glass frit has been used in transparent dielectric, barrier rib and electrode of PDP (Plasma display panel). In PDP fabrication, the firing temperature of glass frit is normally 550~$580^{\circ}C$ with conventional heating. However, there are a problem that silver in electrode is diffused throughout the transparent dielectric. For inhibiting the Ag diffusion we considered use of the microwave heating. We investigated firing of glass frit compared between conventional and microwave heating. After firing by two types of heating, the diffusion of silver is determined using a optical microscope and UV-spectrometer. Based on the our results, the microwave heating should be a candidate to heating source for high efficacy in PDP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.644-647
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• 2004

RF 시스템에서 발룬(Balun)은 회로기판과 집적회로 사이의 임피던스 매칭에 사용되는 소자로서, 전력의 균등한 분배와 함께 180도 위상차를 만드는 역할을 하는 주요 회로부품이다. 시스템의 요구사양에 따라 balanced 임피던스가 $50\Omega$인 소자뿐만 아니라, 25 또는 100, $200\Omega$인 소자들도 많이 사용되는데, 대부분의 계측기가 $50\Omega$을 I/O 임피던스로 설정하고 있어, balanced 임피던스가 $50\Omega$이 아닌 경우 특성을 측정하기 위해서는 별도의 지그설계가 필요하다. 본 연구에서는 중심주파수가 900MHz이고, balanced 임피던스가 $100\Omega$이며, LTCC 모듈 내에 내장되는 임베디드 발룬의 최적 평가를 위한 PCB 측정지그의 구조에 대하여 설계 및 시뮬레이션을 실시하고, 이에 따라 제작된 지그를 시뮬레이션 결과와 비교하였다. 지그를 구성하는 마이크로스트림의 임피던스를 조절함으로써 유효한 측정주파수범위를 넓힐 수 있었으며, 제작된 지그는 설계치에 거의 근접한 전송특성을 나타내었다.

• Korean Chemical Engineering Research
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• v.57 no.6
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• pp.812-825
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• 2019

Two dolomite samples mined from the different mines were calcined using a batch-type microwave kiln ($950/60min^{\circ}C$) to produce $CaO{\cdot}MgO$. The hydration of the $CaO{\cdot}MgO$ samples shows different reactivity. MgO was separated by reacting with a strong acid cation exchange resin using the reactivity of the hydration properties of light dolomite ($CaO{\cdot}MgO$). Calcium ($Ca-(R-SO_3)_2$) was separated from the prepared $CaO{\cdot}MgO$ by the cation exchange resin ($CaO{\cdot}MgO:R-SO_3H=1:12mass%$). High purity MgO (higher than 94 mass %) with unburned $CaCO_3$ (1~2 mass %) was obtained by the separation process. The separated MgO was heated at $950^{\circ}C$ for 60 minutes to afford high purity MgO with MgO content higher than 96%. And High-grade $CaCO_3$ was prepared from the reaction with calcium adsorbed resin ($Ca-(R-SO_3)_2$) and NaOH, $CO_2$ gas.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.102-106
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• 1997

Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.41-48
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• 2018

The quantitative interfacial adhesion energy measurement method of copper redistribution layer and WPR dielectric interface were investigated using $90^{\circ}$ peel test, 4-point bending test, double cantilever beam (DCB) measurement for FOWLP Applications. Measured interfacial adhesion energy values of all three methods were higher than $5J/m^2$, which is considered as a minimum criterion for reliable Cu/low-k integration with CMP processes without delamination. Measured energy values increase with increasing phase angle, that is, in order of DCB, 4-point bending test, and $90^{\circ}$ peel test due to increasing roughness-related shielding and plastic energy dissipation effects, which match well interfacial fracture mechanics theory. Considering adhesion specimen preparation process, phase angle, measurement accuracy and bonding energy levels, both DCB and 4-point bending test methods are recommended for quantitative adhesion energy measurement of RDL interface depending on the real application situations.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.11-11
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• 2000

이동통신기술의 급격한 발달로 고주파회로의 packaging과 interconnect 기술의 고성능화 와 저가격화에 대한 새로운 도전이 요구되고 있다‘ 대부분 기존의 무선통신 부품은 P PCB(Printed Wiring Board)기술을 활용하고 있으나 이러한 기술이 점차로 고주파화되는 경 향을 만족시킬수 없어 새로운 고주파 부품기술이 요구되고 있는 실정이다 .. RF 회로를 구성 하기 위하여 PCB소재의 환경적, 치수안정성 문제를 극복하기 위하여 L TCC(Low T Temperature Cofired Ceramics)기술이 최근 주목을 받고 있다. 차세대 이동통신 기술은 수십 GHz 이상의 고주파특성이 우수하고, 고성능의 초소형의 부품을 저가격으로 제조할수 있으며, 시장의 변화에 기민하게 대처할수 있는 기술이 요구되 고 있으며, 이러한 기술적 필요성에 부합할수 있도록 LTCC 기술이 제안되었다. 이러한 C Ceramic Interconnect 기술은 높은 신뢰성을 바탕으로 fine patterning 기술과 저가의 m metallizing 기술로 가능하게 되었다. 초고주파 통신부품기술은 미국과 유럽 등을 중심으로 G GHz 대역또는 mm wave 대역의 기술에 대하여 치열한 기술개발 경쟁을 벌이고 있으며, 이 러한 고주파 패키징 기술을 바탕으로 미래의 군사, 항공, 우주 및 이동통신 기술에 지대한 영향을 미칠수 있는 기반기술로 자리잡을 전망이다. L LTCC 기술은 기존의 후막혼성기술에 비하여 공정이 단순하고 대량생산이 가능하고 가 격이 비교적 저렴하다. 또한 다층구조로 제작할수 있고, 수동소자를 내장할수 있어 회로의 소형화와 고밀도화가 가능하다. 특히 무선으로 초고속 정보를 처리하기 위하여 이동통신기 기의 고주파화가 빠르게 진행됨에 따라서 고분자재료에 비하여 고주파특성이 우수할뿐아니 라 환경적, 치수안정성이 우수한 세라믹소재플 사용함으로써 고주파 손실율을 저감할 수 있 다 .. LTCC 기술은 후막회로 기술과 tape dielectric 기술이 결합된 기술이다. 표준화된 소재 와 공정기술을 활용하여 저가격으로 고성능소자플 제작할 수 있으며, 전극재료로서 높은 전 도도를 갖고 있는 Ag, Cu, Au 및 Pd! Ag릎 사용함으로써 고주파 손실을 저감시킬 수 있다. L LTCC 기술이 최종적으로 소형화, 고기능 고주파 부품기술로 지속적으로 발전하기 위하여 무수축(Zero shrinkage) 소성기술, 광식각 후막기술 등이 원천기술로서 확립될 수 있어야 하 며, 특히 국내의 이동통신 기술에 대한 막대한 투자에도 불구하고 차세대 이동통신 부품기 술에 대한 개발은 상대적으로 미흡한 실정이므로 국내에 LTCC 관련 소재공정 및 부품소자 기술에 대한 개발투자가 시급히 이루워져야 할 것으로 판단된다. 본 발표에서는 지금까지 국내외 LTCC 기술의 발전과정을 정리하였고, 현재 이 기술의 응용과 소재와 공정을 중심으로한 개발현황에 대하여 조사하였으며, 앞으로 LTCC가 발전 해야할 방향을 제시하고자 한다.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.121-128
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• 2005

Solder joints in microelectronic devices are frequently operated at an elevated temperature in service. They also experience plastic deformation caused by temperature excursion and difference in thermal expansion coefficients. Deformed solders can go through a recovery and recrystallization process at an elevated temperature, which would alter their microstructure and mechanical properties. In this study, to predict the changes in mechanical properties of Pb-free solder joints at high temperatures, the high temperature microhardness of several Pb-free and composite solders was measured as a function of temperature, deformation, and annealing condition. Solder alleys investigated include pure Sn, Sn-0.7Cu, Sn-3.5Ag, Sn-3.8Ag-0.7Cu, Sn-2.8Ag-7.0Cu (composite), and Sn-2.7Ag-4.9Cu-2.9Ni (composite). Numbers are all in wt.$\%$ unless specified otherwise. Solder pellets were cast at two cooling rates (0.4 and $7^{\circ}C$/s). The pellets were compressively deformed by $30\%$ and $50\%$ and annealed at $150^{\circ}C$ for 2 days. The microhardness was measured as a function of indentation temperature from 25 to $130^{\circ}C$. Their microstructure was also evaluated to correlate with the changes in microhardness.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.17-28
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• 2012

It is known that thermo-mechanical properties of solder material and molding compound in WB-PBGA packages are considerably affected by not only temperature but elapsed time. In this paper, finite element analysis (FEA) taking material nonlinearity into account was performed for more reliable prediction on deformation behavior of a lead-free WB-PBGA package, and the results were compared with experimental results from moire interferometry. Prior to FEA on the WB-PBGA package, it was carried out for two material layers consisting of molding compound and substrate in terms of temperature and time-dependent viscoelastic effects of molding compound. Reliable deformation analysis for temperature change was then accomplished using viscoplastic properties for solder ball and viscoelastic properties for molding compound, and the analysis was also verified with experimental results. The result showed that the deformation of WB-PBGA packages was strongly dependent on material model of molding compound; thus, temperature and time-dependent viscoelastic behavior must be considered for the molding compound analysis. In addition, viscoelastic properties of B-type molding compound having comparatively high glass transition temperature of $135^{\circ}C$ could be recommended for reliable prediction on deformation of SAC lead-free WB-PBGA packages.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.2
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• pp.31-43
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• 2019

In this study, polymer elastic bumps were fabricated for the flexible electronic package flip chip bonding and the viscoelastic and viscoplastic behavior of the polymer elastic bumps according to the temperature and load were analyzed using FEM and experiments. The polymer elastic bump is easy to deform by the bonding load, and it is confirmed that the bump height flatness problem is easily compensated and the stress concentration on thin chip is reduced remarkably. We also develop a spiral cap type and spoke cap type polymer elastic bump of $200{\mu}m$ diameter to complement Au metal cap crack phenomenon caused by excessive deformation of polymer elastic bump. The proposed polymer elastic bumps could reduce stress of metal wiring during bump deformation compared to metal cap bump, which is completely covered with metal wiring because the metal wiring on these bumps is partially patterned and easily deformable pattern. The spoke cap bump shows the lowest stress concentration in the metal wiring while maintaining the low contact resistance because the contact area between bump and pad was wider than that of the spiral cap bump.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.149-154
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• 2018

This paper describes the fabrication and heat transfer property of 50 watts rated LED array module where multiple chips are mounted on chip-on-board type ceramic-metal hybrid substrate with high heat dissipation property for high power street and anti-explosive lighting system. The high heat transfer ceramic-metal hybrid substrate was fabricated by conformal coating of thick film glass-ceramic and silver pastes to form insulation and conductor layers, using thick film screen printing method on top of the high thermal conductivity aluminum alloy heat-spreading panel, then co-fired at $515^{\circ}C$. A comparative LED array module with the same configuration using epoxy resin based FR-4 PCB with thermalvia type was also fabricated, then the thermal properties were measured with multichannel temperature sensors and thermal resistance measuring system. As a result, the thermal resistance of the ceramic-metal hybrid substrate in the $4{\times}9$ type LEDs array module exhibited about one third to the value as that of FR-4 substrate, implying that at least triple performance of heat transfer property as that of FR-4 substrate was realized.