• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.4
• /
• pp.41-45
• /
• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.05a
• /
• pp.70-73
• /
• 2012

In this paper, we introduce a design method for a quasi-Yagi antenna (QYA) with broadband characteristics of an impedance bandwidth ratio of > 2 : 1 and a gain of > 4 dBi. The QYA is fed by a microstrip line fabricated on a coplanar strip line and it consists of 3 elements; a planar dipole, a nearby director close to the dipole, and a ground plane reflector. By placing a rectangular patch-type director with large width near to the dipole driver, broadband characteristics are achieved. An optimized 3-element QYA for operation over 1.6-3.5 GHz (bandwidth ratio 2.2 : 1) is fabricated on an FR4 substrate with a size of $90mm{\times}90mm$ and tested experimentally. The results show an impedance bandwidth of 1.56-3.74 GHz (bandwidth ratio 2.4 : 1) for VSWR < 2, a peak gain of 4.41-6.53 dBi, and a front-to-back ratio (FBR) > 13.6 dB within the bandwidth.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.4
• /
• pp.19-22
• /
• 2017

In this study, wavelength-free $1{\times}N$ optical splitter using a tapered polymer waveguide was studied to realize the transmission network of high-speed information communication network. Based on the evaluation of mode converting characteristics of splitter having two tapered multi-mode interference structures, an optimized structure of the $1{\times}N$ splitter was proposed for wide-range of input wavelength. 2D-BPM analysis $1{\times}8$ model showed that insertion loss of the proposed splitter is less than 10 dB for wavelength of input source from 1260 nm to 1650 nm.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.4
• /
• pp.47-52
• /
• 2017

Recently, a great attention has been paid to the mechanical behavior of ITO (Indium Tin Oxide) film, which is widely used in current smart devices due to its excellent electrical properties and transparency. In this study, the reliability of ITO thin films on flexible substrates was investigated using bending test and bending fatigue test. According to the relative position of ITO and substrate, the experiment was conducted on both outer and inner bending conditions. Inner bending condition exhibited superior electrical stability compared to outer bending test. The electrical resistance during outer bending fatigue test significantly increased compared to that in the inner bending fatigue. The crack nucleation and propagation differs according to the stress state and they have a great influence on the electrical resistance. The crack morphologies were observed by scanning electron microscopy.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.4
• /
• pp.53-57
• /
• 2017

The most representative transparent electrode in the modern society is ITO (Indium Tin Oxide). ITO is widely used in general for touch panels and displays due to its high electrical and optical properties. However, in general, mechanical deformation causes deterioration and destruction of device properties because ITO is basically vulnerable to mechanical deformation. Therefore, the in-depth understanding on the stability of ITO film during various mechanical deformations is necessary. In this study, the reliability and mechanical properties ITO sample having different length, width, and area were investigated. The electrical stability was estimated according to electrical resistance change. The stability was dropped as the sample length, and width increased and the sample area decreased. The electrical stability of ITO film was correlated with twisting strain including tensile, compressive and shear stress.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.37 no.5
• /
• pp.495-501
• /
• 2013

This paper describes a flexible wireless telemetering system using a mesoscale cantilever sensor, which is microfabricated with a patterned thin Ni-Cu foil on a resin substrate. The dynamic validation of the sensor has been conducted in a flow. The wireless telemetry is used to obtain data regarding the oscillating flows. It is shown that the sensor is nearly independent of the environmental temperature and is suitable for application to primary healthcare and diagnostic devices. It can be easily integrated with other modules for measuring physiological parameters, e.g., blood pressure, oxygen saturation, and heart rate, to increase the convenience and reliability of diagnosis. The precision and reliability of the sensor are also dependent on the design of the analog front-end and noise reduction techniques. It is shown that the present system's minimum interval between packet transmissions is ~16 ms.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.3 s.357
• /
• pp.26-32
• /
• 2007

A simple but accurate equivalent circuit of an aperture-coupled cavity-fed microstrip patch antenna is developed. It consists of ideal transformers, admittance elements, and transmission lines, and the related circuit element values are computed by applying the reciprocity theorem and complex power concept with the spectral-domain immittance approach. After validating by the published design example, a dual-band antenna was designed with the help of a hybrid optimization method. For this purpose, the Genetic Algorithm is applied with the Nelder-Mead simplex method. The obtained good results show that this approach turned out to be a very efficient tool for the design of aperture-coupled cavity-fed microstrip patch antenna having various structural design parameters.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.3
• /
• pp.65-71
• /
• 1999

The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide($SiO_2$) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at $85^{\circ}C$ among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037 $\mu\textrm{m}$/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.2
• /
• pp.29-36
• /
• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.1
• /
• pp.27-31
• /
• 2008

Due to the increasing need for miniaturization of electronic device, embedded resistor technology using thick film resistance paste to embed resistors currently mounted on the board thus effectively reducing board size, is being extensively researched. In this research, thick film resistor paste having $0.35{\sim}4k{\Omega}/sq$ range of resistivity were fabricated using mixtures of carbon black and epoxy resin. In order to adjust the TCR (temperature coefficient resistivity), TCR modifiers such as Ni-Cr alloy, $SiO_2$ powder were added and were able to improve on TCR value with $100ppm/^{\circ}C$. Finally embedded resistor board using thick film resistance paste were fabricated. Stable resistivity value and reliability results were achieved.