• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.41-48
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• 2010

To improve the pot life of one-part in-house anisotropic conductive paste (ACP) formulations, 2-methyl imidazole curing accelerator powders were encapsulated with five agents. Through measuring the melting point of the five agents using DSC, it was confirmed that a encapsulation process with liquid-state agents is possible. Viscosity of ACP formulations containing the encapsulated imidazole powders was measured as a function of storage time from viscosity measurements. As a result, pot life of the formulations containing imidazole powders encapsulated with stearic acid and carnauba wax was improved, and these formulations indicated similar curing behaviors to a basic formulation containing rare imidazole. However, the bondlines made of these formulations exhibited low average shear strength values of about 37% level in comparison with the basic formulation.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.49-54
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• 2002

Cobalt silcides thin films were prepared on Poly-Si/$SiO_2$/Si substrates by Co metal depostion using E-beam evaporation method and rapid thermal annealing for the application of inkjet printing heater. The crystal phases and composition distributions of the films were investigated as functions of the rapid thermal annealing (RTA) temperatures (600~$900^{\circ}C$) and times (20~40 sec). The high temparature thermal stability was also investigated by the analysis of sheet resistance and crystalline properties. The stable $CoSi_2$ phases were obtained by the RTA annealing at $800^{\circ}C$ for 20 seconds showing $0.8 \Omega /\Box$ of sheet resitance. However, the sheet resistances were sharply increased at below $700^{\circ}C$ due to changes of crystalline phases. The temperature resistance coefficient of heating elements was found to be about $0.0014/^{\circ}C$, and the obtained cobalt silicided films can be applied to the printer heating elements.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.111-115
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• 2015

To improve the efficiency of the Si solar cell, high minority carrier life time is required. Therefore, the passivation technology is important to eliminate point defects on the silicon surface, causing the loss of minority carrier recombination. PECVD or post-annealing of thermally-grown $SiO_2$ is commonly used to form the passivation layer, but a high-temperature process and low thermal stability is a critical factor of low minority carrier lifetime. In this study, atomic layer deposition was used to grow the $Al_2O_3$ passivation layer at low temperature process. $Al_2O_3$ was selected as a passivation layer which has a low surface recombination velocity because of the fixed charge density. For the high charge density, an improved minority carrier lifetime, and a low surface recombination, nitrogen was doped in the $Al_2O_3$ thin film and the improvement of passivation was studied.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.1-6
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• 2004

The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the ECM(Engine Control Module) alumina substrate and the intermetallic compound layer between Sn-37wt%Pb solder and pad joints after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, conductor pad roughness were increased from 304 nm to 330 nm. $Cu_6/Sn_5$ formed during initial reflow process at the interface between TiWN/Cu pad and solder grew by the succeeding reflow process, so the grains became coarse. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about 0.1∼0.6 $\mu\textrm{m}$. And a needle-shaped was also observed at the inside of the solder.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.29-36
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• 2007

The main objectives of this study are to investigate the micro-scale energy transfer mechanism for silicon wafer and to find an efficient way for fabrication of silicon wafer through-hole by using the femtosecond pulse laser ablation. In addition, the electron-phonon interactions during laser irradiation are discussed and the carrier number density and temperatures are estimated. In particular, the present study observes the shapes of silicon wafer through-hole with $100\;{\mu}m$ diameter and it also measures the heat-affected area and the ablation depths fur different laser fluences by using the optic microscope and the three-dimensional profile measurement technique. First, from numerical investigation, it is found that the nonequilibrium state exists between electrons and phonons during laser irradiation. From experimental results, it should be noted that the heat-affected area increases with laser fluence, and the optimal conditions for through-hole formation with minimum heat affected zone are finally obtained.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.75-80
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• 2012

$InSb$ films were fabricated by DC magnetron sputtering and the effects of deposition temperature, heat treatment, passivation from evaporation and multi-layered structure were investigated. Electron mobility and electron concentration were linearly increased with deposition temperature for as-deposited specimens. It was found that the mobilities depend on the grain size rather than the stoichiometry for the samples with very low mobilities. The mobilities largely increased for the specimens with evaporation passivation compared with those without passivation layer. The mobility also increased with the amount of indium deposition in the multi-layer structured $InSb$ films. It was found that the mobility increments in both cases are due to the matching of the stoichiometry in $InSb$ films. For the heat treated and passivated specimens, the mobilities increased with annealing time and the maximum mobility was measured as 1612 $cm^2$/Vs.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.67-73
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• 2012

After flash memory card(FMC) was manufactured by $B^2it$ process, interfacial reaction of silver bump with thermal stress was studied. To investigate bonding reliability of Ag bump, thermal shock and thermal stress tests were conducted and then examined on the crack between Cu land and Ag bump interface. Diffusion reaction of Ag bump/Cu land interface was analyzed using SEM, EDS and FIB. The Ag-Cu alloy layer due to the interfacial reaction was formed at the Ag/Cu interface. As the diffusivity of Ag ${\rightarrow}$ Cu is faster than Cu ${\rightarrow}$ Ag, a lot of (Cu, Ag) alloy layers were observed at the Cu layer than Ag. These alloy layers contributed to increase the Cu-Ag bonding strength and its reliability.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.105-105
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• 2000

현재 급격히발전하는 이동통신기술로 미루어 보아 앞으로는 모든 정보통신이 무선통신으로 이루어질 것이다. 그런데 무선통신은 이동성과 대용량의 정보전송에 초점을 맞추어 발전하고 있다. 많은 정보량을 전달하기 위해서 현재 사용되는 주파수 대역보다 고주파의 전파가 사용되어야 한다. 또한 이동성을 향상시키기 위해서는 통신기기의 소형화를 이루어야 하고 그러기 위해서 궁극적으로 모든 소자를 하나의 칩(chip)으로 집적화하는 것이 필요하다. 따라서 벌크상태로 사용되고 있는 유전체 공진기를 소형화, 즉 박막화해야만 한다. 결국 유전체 박막의 마이크로파 대역에서의 유전특성을 연구하고 그 특성을 향상시켜야만 한다. 통신기기에서 사용되는 유전체 공진기는 소형화를 위해 높은 유전율과 낮은 유전손실(tan$\delta$), 즉 높은 품질계수 (Q)를 가져야 한다. 마이크로파 대역에서 사용되고 있는 유전체 중에서 TiO2는 벌크 상태의 rutile 상에서 100정도의 높은 유전율과, 4 GHz에서 10,000 정도의 높은 품질계수를 나타낸다고 보고되어 있다. 따라서 본 연궁서는 TiO2 박막의 마이크로파 유전특성을 연구하였고 anatase 박막의 유전특성도 측정하였다. TiO2 박막을 RF magnetron reactive sputtering 방법으로 Ar (15 sccm)과 O2 (1.5 sccm) 기체를 사용하여 상온에서 증착하였다. 4mTorr의 증착압력에서 안정한 rutile 박막을 얻었고, 15 mTorrdo서 준안정한 anatase 박막을 얻을 수 있었다. 그리고 그 중간의 압력에서 두 상이 혼합된 박막이 증착되었다. 위와 같은 방법으로 형성한 TiO2 박막의 마이크로파 유전특성을 측정하기 위해 마이크로스트립 링공진기 (microstrip ring resonator)를 제작하였다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.25-32
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• 2011

We have studied on the slicing and polishing processes of R-plane sapphire wafers for the substrates of UHB nonpolar a-plane GaN LED. The fabrication conditions of the R-plane and c-plane wafers were influenced by the large anisotropic properties (mechanical properties) of the sapphire. The slicing process was more affected by the anisotropic properties of R-plane than the polishing process. When the slicing direction was $45^{\circ}$ to the a-flat, the slicing time was shorter and the quality of as-slicing wafers was better than the slicing direction of normal to the a-flat. The MRR(Material removal rate) of mechanical polishing processes such as lapping and DMP(Diamond mechanical polishing) did not show significant differences between the R-plane and c-plane. The MRR of the c-plane was about two times higher than that of R-planes at the CMP(Chemical mechanical polishing) process due to the formation of hydrolysis reaction layers on the surface of the c-plane.

• Journal of IKEEE
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• v.23 no.3
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• pp.1112-1115
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• 2019

This paper proposes a novel low-profile omni-directional microstrip antenna to mount on the deployable wing of the observation munition. The proposed antenna is designed on seven hexagonal resonators in a quasi-circular array to achieve a monopolar radiation pattern with a thin substrate. By employing the mesh ground structures, the resonant frequencies and impedance bandwidths of the proposed antenna is investigated. To verify the feasibility of the mesh ground structure, the thin ground wire width is investigated theoretically for improving the 3-dB fractional bandwidth, realized antenna gain and quality-factor. The proposed antenna demonstrates a good monopolar radiation in good agreement with the simulation results. The implemented prototype shows the measured bandwidth of 326 MHz with respect to 5.65% centered at 5.77 GHz and realized gain of 5.49 dBi at 5.84 GHz.