• Title/Summary/Keyword: 리터럴 스위치

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A New Function Embedding Method for the Multiple-Controlled Unitary Gate based on Literal Switch (리터럴 스위치에 의한 다중제어 유니터리 게이트의 새로운 함수 임베딩 방법)

  • Park, Dong-Young
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.1
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    • pp.101-108
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    • 2017
  • As the quantum gate matrix is a $r^{n+1}{\times}r^{n+1}$ dimension when the radix is r, the number of control state vectors is n, and the number of target state vectors is one, the matrix dimension with increasing n is exponentially increasing. If the number of control state vectors is $2^n$, then the number of $2^n-1$ unit matrix operations preserves the output from the input, and only one can be performed the unitary operation to the target state vector. Therefore, this paper proposes a new method of function embedding that can replace $2^n-1$ times of unit matrix operations with deterministic contribution to matrix dimension by arithmetic power switch of the unitary gate. The proposed function embedding method uses a binary literal switch with a multivalued threshold, so that a general purpose hybrid MCU gate can be realized in a $r{\times}r$ unitary matrix.

(A Study on the Design of Analog Converter Using Neuron MOS) (뉴런모스를 이용한 아날로그 변환기 설계에 관한 연구)

  • Han, Seong-Il;Park, Seung-Yong;Kim, Heung-Su
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.3
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    • pp.201-210
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    • 2002
  • This paper describes a 3.3 (V) low power 4 digit CMOS quaternary to analog converter (QAC) designed with a neuron MOS($\upsilon$MOS) down literal circuit block and cascode current mirror source block. The neuron MOS down literal architecture allows the designed QAC to accept not only 4 level voltage inputs, but also a high speed sampling rate quaternary voltage source LSB. Fast settling time and low power consumption of the QAC are achieved by utilizing the proposed architecture. The simulation results of the designed 4 digit QAC show a sampling rate of 6(MHz) and a power dissipation of 24.5 (mW) with a single power supply of 3.3 (V) for a CMOS 0.35${\mu}{\textrm}{m}$ n-well technology.