• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.287-287
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• 2010

휴대용 기기의 사용이 증가하면서 배터리의 고용량화와 소형화가 요구되고 있다. 특히 내시경 캡슐과 같은 의료용 센서 기기에서는 소형화가 매우 중요하며 인체에 해로운 액체전해질이 들어가지 않는 것이 바람직하다. 최근 무선센서, RFID 태그, 스마트 카드 등을 위하여 고체전해질을 사용하는 박막 마이크로 배터리가 개발되고 있으나, 에너지 저장용량이 작아 응용분야가 제한적이다. Si wafer 위에 형성된 고단차의 3차원 구조 위에 박막 배터리를 형성한다면 표면적 증가에 의해 에너지 저장용량 역시 크게 증가할 것이며, Si 기반의 반도체, 디스플레이, 태양전지 등과 쉽게 집적이 가능할 것이다. 본 연구에서는 펄스 레이저 증착법(Pulsed Laser Deposition)으로 리튬 배터리의 cathode 물질인 $LiCoO_2$를 박막으로 제조하고 그 특성을 연구하였다. 펄스 레이저 증착법은 저온 증착이 가능하고 타겟 물질과 같은 조성의 박막을 증착하는 것이 용이한 장점이 있다. Pt, TiN 등의 기판 위에 $LiCoO_2$ 박막을 증착하고 증착 온도와 산소($O_2$) 분압이 박막의 조성, 미세구조, 결정성, 그리고 전하저장용량에 미치는 영향을 고찰하였다.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.79-79
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• 1997

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.320-324
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• 2005

The core loss of $3\%$ SiFe is strongly dependent on silicon content, impurities, permeability, and domain structure of the SiFe. Domain refining has been proved to be very good method for reduction of core loss in high permeability grain oriented SiFe, and laser scribing is well-blown as an effective and industrially important method of domain refinement. In this work, magnetic domain refinement has been carried out by using a pulsed Nd : YAG laser, and the core losses have been measured and analyzed to and optimal parameters of the laser treatment. The laser hem was focused with a spot size of $100{\mu}m$ and pulse energy of 10${\~}$35mJ and the lines were scribed with a period of ${\~}$5mm. The core loss was improved up to $17\%$ with 30 ns-Nd : YAG laser beam in $3\%$ SiFe.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.299-306
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• 1998

Crystallization of the amorphous silicon needs activation. Thermal energy through laser annealing, furnace annealing and rapid thermal process (RTP) has been convinced to crystallize the amorphous silicon thin film. It is expected that some other type of energy like mechanical energy can help to crystallize the amorphous silicon thin film. In this study, mechanical energy through wet blasting of silica slurry and silicon ion implantation has been applied to the amorphous silicon thin film deposited with LPCVD technique. RTP was employed for the annealing of this mechanically-damaged amorphous silicon thin film. For the characterization of the crystallized silicon thin film, XRD and Raman analysis were conducted. In this study, it is shown that the mechanical damage is effective to enhance the crystallization of amorphous silicon thin film.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.112-114
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• 2001

고온 고밀도 플라즈마는 그 자체가 가지는 다양한 응용성 때문에 분광학적 특성에 대한 보다 나은 이해가 필요하다. 그 중에서도 이온화 균형은 플라즈마에서의 빛의 방출과 흡수를 결정하는데 중요한 역할을 하는 것으로 일반적으로는 기저 준위의 점유밀도가 들뜬 준위에 비해 월등히 많기 때문에 각 이온화 상태의 기저 준위들 간의 이온화 과정들만이 고려된다. 하지만 플라즈마의 밀도가 높아지면 들뜬 준위가 이온화에 기여하는 정도가 커지기 때문에 더 이상 기저 준위들만을 고려하는 것은 맞지 않게 된다. (중략)

• Journal of the Korea Institute of Building Construction
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• v.22 no.2
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• pp.171-182
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• 2022

The regular assessment of a building is important to understand structural safety and latent risk in the early stages of building life cycle. However, methods of traditional assessment are subjective, atypical, labor-intensive, and time-consuming and as such the reliability of these results has been questioned. This study proposed a method to bring accurate results using a 3D laser scanner and integrate them in Building Information Modeling (BIM) to visualize defective condition. The specific process for this study was as follows: (1) semi-automated data acquisition using 3D laser scanner and python script, (2) scan-to-BIM process, (3) integrating and visualizing defective conditions data using dynamo. The method proposed in this study improved efficiency and productivity in a building assessment through omitting the additional process of measurement and documentation. The visualized 3D model allows building facility managers to make more effective decisions. Ultimately, this is expected to improve the efficiency of building maintenance works.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.2
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• pp.84-88
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• 2021

The change of the photoluminescence properties of La2O3-CaF2-Al2O3-SiO2 glass-ceramics doped with rare earth material, that is used as laser and optical sensors, was analyzed according to heat treatment temperature. The heat treatment conditions for fabricating glass-ceramics were obtained through non-isothermal thermal analysis, and X-ray diffraction analysis was performed to determine the degree of crystal growth and kinds of crystal phases generated according to the heat treatment temperature. Using Scherrer's equation, it was predicted that crystals with a size of 25~40 nm would be generated inside the glass-ceramics. Photoluminescence (PL) analysis showed that the specimens heat-treated at 660℃ to 670℃ for 1 hour had the highest PL intensity. Also, from the CIE color coordinate analysis, all glass-ceramics specimens emitted red-orange light regardless of the heat treatment condition.

• Laser Solutions
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• v.13 no.1
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• pp.6-10
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• 2010

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1627-1629
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• 1997

엑시머 레미저를 이용한 다결정 실리콘막과 게이트 절연막 사이의 계면 거칠기를 개선하기 위해 변형핀 방법의 레이저 어닐링으로 다결정 실리콘 박막 트랜지스터를 제작하였다. SEM(scanning electron microscope)으로 활성층과 게이트 절연층과의 표면 이미지를 관찰한 결과 기존의 레이저 어닐링 결정화에 의한 것보다 계면 거칠기 정도가 상당히 줄었음을 관찰 하였다. 이렇게 개선된 계면 거칠기가 다결정 박막 트랜 지스터의 성능에 미치는 효과를 분석하기 위해 기존의 방법으로 제작된 소자와 계면 거칠기를 줄인 소자의 여러 가지 전기적 변수들(문턱 전압 기울기, 문턱 전압, 누설 전류)을 비교해 보았다. 우리는 또한 계면 거칠기와 다결정 박막 트랜지스터 소자의 상관 관계를 보기 위해 컴퓨터 시뮬레이션도 함께 병행하였다. 시뮬레이션을 통해 거친 계면 부근의 전계 집중 효과 같은 것으로 인해 소자의 성능이 저하된다는 것을 알 수 있었다.