• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.348-352
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• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.7-11
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• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.215-217
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• 2007

반도체 집적화 기술의 발달로 반도체 공정에서 디바이스의 선폭은 줄어들고, 박막의 다층화가 필수적인 과정이 되었다. 이에 따라 반도체에서 Si 기판과 금속 배선과의 열적 안정성에 대한 신뢰성이 더욱 중요시 되어가고 있다. 이를 방지하기 위하여 우리는 3개의 화합물로 구성된 Tungsten-Carbon-Nitrogen (W-C-N) 확산방지막을 사용하였다. 실험은 Si 기판위에 W-C-N박막을 물리적 기상 증착법(PVD)으로 질소비율을 변화하며 확산방지막을 증착하여 Si 기판과 W-C-N확산방지막의 특성을 여러 온도 열처리 조건에서 확인하였다. 특성을 분석을 위하여 ${\alpha}-step$과 ${\beta}-ray$를 이용하여 증착률을 확인한 후 4-point probe를 이용하여 비저항을 측정하였고, X-ray Diffraction 분석을 통하여 결정 내부의 변화를 확인하였다. 이를 통하여 W-C-N 확산방지막의 열적인 안정성을 질소변화에 따라 조사하였다.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.1
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• pp.59-68
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• 1995

박막제조 기술 및 BGA패캐지를 이용하여 Wellcom 2000 system 소요 OCU Board 의 집적화를 구현하였다. 기존 PCB에 실장되는 소자 일부를 2 Channel BGA 패캐지로 모 듈화한 결과 약 1/6로 소형화시킬수 있었으며 8 Channel의 모율화는 현재 진행중인 다층 구조의 제조 기술 개발과 아울러 BGA 패캐지로 실현이 가능하며 1/10로집접화할수 있음을 알수 있었다. 또한 PCB위에 Bare Chip을 실장하여 Wire Bonding 한 COB를 구현하여 CBGGA의 PCB실장과 함께한 모듈을 형성해 보았다. CBGA패캐지에 Ball Shear Test, In Circuit Test 온도 환경주기시험(TCT) 진동시험을 통하여 신뢰성을 입증하였다. 이때 CBGA의 Coplanarity(3.2%) 증진을 위하여 Ceramic Pad에 선택적인 도금 방식을 개발적용 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.87-88
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• 2007

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.2
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• pp.372-377
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• 2016

Communication flow is changing rapidly. Recently, a range of wearable devices such as wearable glasses and wearable watch, have been launched. These kinds of wearable devices help people to live a more comfortable life. Wearable devices most have an antenna for wireless communication. This paper reports a transparent antenna that is made of an optically transparent material for wearable glasses. Transparent antenna can be applied to smart windows and will not disturb the view of user. IZTO/Ag/IZTO multilayer electrode has higher electrical and optical properties. This antenna is available because of its good electrical properties. This study measured the performance of the proposed transparent antenna, which is made of a multilayer electrode, applied to a lens. The proposed antenna was simulated with several substrates. The antenna impedance was matched with length and width of the antenna. The antenna's conductivity and transparency was measured using a HMS-3000 and UV-spectrometer. A 40nm thick Ag single layer antenna was fabricated on a flexible polyimide substrate for comparing the antenna performances. The fabricated antenna is useable at a frequency of 2.4-2.5GHz, which is suitable for Wifi communications and has peak gain of 2.89dBi and an efficiency of 34%.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.141-145
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• 2001

The Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ exchange bias layers (EBLs), which have a small amounts of Pt, exhibit a high value of H$\_$ex/. The Si/Ni-Fe/Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBL shows the largest H$\_$ex/ of 187 Oe, which is equivalent to a exchange energy (J$\_$ex/) of 0.146 erg/cm$^2$. Mn$\_$80/Ir$\_$18.1/Pt$\_$1.9/ EBLS are estimated to have blocking temperature of about 250 $\^{C}$, which is higher than those of Mn-Ir EBLs and Mn-Ir-Pt EBLs with higher Pt contents. This result implies that a little addition of Pt element promotes thermal stability in the Mn-Ir-Pt EBLs. The chemical stability of Mn-Ir-Pt EBLs was characterized by potentiodynamic test, which was performed in 0.001 M NaCl solution. The current density of Mn-Ir-Pt films was gradually reduced with increasing Pt content. The present results indicate that the Mn-Ir-Pt with a small amount of Pt is suitable for an antiferromagnetic material for a reliable spin valve giant magnetoresistance device.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.3
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• pp.233-240
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• 2014

In this study, we investigated the dispersion characteristics of guided waves in thin films. Dispersion curves are essential for understanding not only the behavior of ultrasonic waves, but also the mechanical properties of thin films. Matrix techniques are presented for modeling ultrasonic waves in multilayered structures before being used to calculate the dispersion curves for Al-steel and Al-composite specimens. When compared with the dispersion curves obtained using the commercial program (Disperse), the dispersion curves generated from the transfer matrix method show its validity. These developed methods are used to obtain dispersion curves for Al thin films deposited on a Si substrate. The resulting dispersion curves enable observation of both dispersive and non-dispersive behavior for the guided waves, depending on the thickness of the thin films.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.32-43
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• 2023

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.42-42
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• 2011

본 연구에서는 광학소자에 폭넓게 이용되는 AlGaP III-V족 화합물 반도체 중에서 한쪽 끝 이 종화합물인 AlP의 유전함수를 0.75~5.05 eV의 에너지 영역에서 타원편광분석법을 이용하여 분석하였다. AlP는 산소와 급격히 반응하기 때문에, 대기 중에서 물질 고유의 광특성이 유지되기 어려울 뿐만 아니라, 박막 위에 생성되는 산화막 때문에 순수한 AlP의 유전함수 측정이 불가능 하다. 본 연구에서는 물질의 유전함수에 미치는 산화 효과를 최소화하기 위하여 Molecular Beam Epitaxy로 성장한 $1.0{\mu}m$ 두께의 AlP 박막을 초고진공 상태의 chamber 안에서 타원편광분석기를 이용하여 실시간으로 측정하였다. 박막의 투명도에 의해 나타나는 간섭 pattern과 표면거칠기 효과로 인한 유전함수의 왜곡을 보정하기 위하여 변수화 모델이 이용되었으며 다층 변수화모델 계산을 통하여 순수한 AlP의 유전함수를 얻어낼 수 있었다. 본 연구에서 측정된 순수한 AlP의 유전함수는 타원편광분석기를 이용한 최초의 실험결과로서 이차미분을 이용한 전이점 (Critical Point) 분석결과 이론적인 electronic band structure에서 $E_1$, $E_1+_{{\Delta}_1}$, $E_2$에 해당하는 전이점들을 확인할 수 있었다.