• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.50-55
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• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

• Journal of Convergence for Information Technology
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• v.8 no.2
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• pp.83-90
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• 2018

We have studied the optimal conditions for design and development on the communication device for a bilateral, and it's electrodes for transmitting electric signal are constructed on the $36^{\circ}$ rotated $LiTaO_3$ substrate by evaporating Al-Cu(W 30%) alloy. At first, we manufactured three kind of samples using this method, and selected two samples as similar with frequency, ripple and passband characteristics, and then we connect two samples by series in order to make bilateral devices. As results, we obtained that the electrode structure has better characteristics then the others, when it's width of reflector and electrode are $1{\lambda}/4$, $1{\lambda}/12$ respectively, and it's frequency is approximately 190.3MHz. Near future, I hope to help the manufacture for communication devices for the multi-channel and the duplex filter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2526-2533
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• 2015

In this paper, a design method for a compact dual-band coplanar waveguide-fed slot antenna using SRR(split-ring resonator) conductor is studied. The SRR conductor is loaded inside a rectangular slot of the proposed antenna for dual-band operation. When the SRR conductor is inserted into the slot, the original rectangular slot is divided into a rectangular loop region and a rectangular slot region, and frequency bands are created by the loop and slot, separately. A prototype of the proposed dual-band slot antenna operating at 2.45 GHz WLAN band and 3.40-5.35 GHz band is fabricated on an FR4 substrate with a dimension of 30 mm by 30 mm. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.38-2.51 GHz and 3.32-5.38 GHz for a voltage standing wave < 2, and measured gain is 1.7 dBi at 2.45 GHz, and it ranges 2.4-3.2 dBi in the second band.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.50-53
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• 2009

Multi-walled carbon nanotubes (MWNTs) were synthesized on different substrates (bare Si and $SiO_2$/Si substrate) to investigate dye-sensitized solar cell (DSSC) applications as counter electrode materials. The synthesis of MWNTs samples used identical conditions of a Fe catalyst created by thermal chemical vapor deposition at $900^{\circ}C$. It was found that the diameter of the MWNTs on the Si substrate sample is approximately $5{\sim}10nm$ larger than that of a $SiO_2$/Si substrate sample. Moreover, MWNTs on a Si substrate sample were well-crystallized in terms of their Raman spectrum. In addition, the MWNTs on Si substrate sample show an enhanced redox reaction, as observed through a smaller interface resistance and faster reaction rates in the EIS spectrum. The results show that DSSCs with a MWNT counter electrode on a bare Si substrate sample demonstrate energy conversion efficiency in excess of 1.4 %.

• Korean Journal of Optics and Photonics
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• v.25 no.2
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• pp.72-77
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• 2014

We have demonstrated a terahertz (THz) time-domain spectroscopy and imaging system using compact fiber-coupled THz modules. Using this THz spectroscopy system we have measured the absorption spectrum of water vapor in free space over 3 THz, as well as the refractive indices of various substrates such as Si, $Al_2O_3$, and GaAs using the transfer-function method. Through the THz imaging system we have observed a high-quality THz image of a medical knife and metal clip sample, with a resolution of $192{\times}89$ pixels using a step size of 250 ${\mu}m$.

• Bulletin of the Korea Photovoltaic Society
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• v.7 no.1
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• pp.17-26
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• 2021

Cu(In,Ga)Se₂(CIGS) 태양전지 연구개발은 1970년대부터 지속적으로 발전하여 유리 및 플렉서블 기판에서 모두 20% 이상의 고효율을 달성하였으며, 상용화도 성공적으로 이루었다. 최근 태양전지의 초고효율화를 위한 방안으로 태양전지를 적층하는 다중접합 태양전지 특히 제조원가를 고려한 탠덤 구조에 대한 연구가 상당히 주목을 받고 있다. 이는 페로브스카이트 태양전지를 상부셀로 적용하였을 때, 29.5%의 초고효율이 보고되었기 때문이다. 이런 추세로 보면 태양전지의 탠덤 구조는 초고효율화 달성에 필연적으로 사용될 것으로 생각된다. 하지만 초고효율화와 더불어 BIPV, VIPV, 모바일소자 등 심미성, 경량성, 유연성을 갖춘 다기능성 태양전지에 대한 요구까지 충족시키기 위해서는 궁극적으로 유연한 하부셀이 사용되어야 한다. 이런 점들을 고려하였을 때, 초고효율 유연 탠덤 태양전지의 하부셀로 유연 CIGS 박막 태양전지가 적합한 선택이 될 것으로 판단된다. 따라서 본 글에서는 CIGS 박막 태양전지를 기반으로 하는 탠덤 태양전지의 연구개발 현황에 대해서 살펴보고 향후 유연 탠덤 태양전지의 전망에 대해서도 기술하고자 한다.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.22 no.6
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• pp.223-229
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• 2023

This papart proposes single pole double throw (SPDT) switch with six-stage radial stub resonators in the 3.6~4.0 GHz band. The switch was simulated using ADS (Advanced Design Software), a design tool for the wireless communication circuits, and evaluated on a pcb substrate. The measurement results of the radial SPDT switch showed an average 90 dB isolation, and 1.5 dB insertion loss. This isolation characteristic was 20 dB superior to higher than those laboratory or commercial products reported thus far. The proposed SPDT switch is applicable to multi-band RF front-end systems, such as WiMAX, LTE/5G, Wi-Fi, and HyperLAN.

• Journal of Advanced Navigation Technology
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• v.28 no.2
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• pp.232-237
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• 2024

In this paper, a broadband double dipole quasi-Yagi antenna using a 4×2 meander line array structure for maintaining 8 dBi gain was studied. The 4×2 meanderline array structure consists of a unit cell in the shape of a meanderline conductor, and it was placed above the second dipole antenna of the double dipole quasi-Yagi antenna. A double dipole quasi-Yagi antenna with generally used multiple strip directors was designed on an FR4 substrate with the same size, and the input reflection coefficient and gain characteristics were compared. Comparison results showed that the impedance frequency bandwidth increased by 6.3% compared to when using the multiple strip directors, the frequency bandwidth with a gain of 8 dBi or more increased by 10.1%, and average gain also slightly increased. The frequency band of the fabricated antenna for a voltage standing wave ratio less than 2 was 1.548-2.846 GHz(59.1%), and gain was measured to be more than 8 dBi in the 1.6-2.8 GHz band.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.359-364
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• 2008

We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.