• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.2
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• pp.44-54
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• 1985

The high resolution of positron emission tomography, in particular, requires the use of detector crystals of narrow width but still with sufficiently high detection efficiency. If the crystal width is reduced to several millimeters, degradation of detection efficiency and leakage coefficient becomes significant, particularly in case of obliquely incident photons. Alleviation of such a problem can be made possible by modification of the detector shape from the conventional rectangular type to a wed농e type. The Proposed wedge shape makes the absorption length longer for obliquely incident photons, thus increasing the detection efficiency and suppressing leakage coefficient. For the BGO detectors of 4-8mm width, the computer simulation result of the system using wedge detectors reveals resolution improvement to the system using conventional detectors. For the system composed of 200 BGO detectors of 8mm width with 2 point sampling motion, the simulation resolution system using conventional detectors. For the very high resolution system of 3-7mm FWHM, the characteristics of the detector shape and size is studied by computer simulation.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.102-108
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• 2013

In manufacturing of solution-processed organic electronic devices, a spin coating method is frequently used, but which has a big problem. Solvent in a solution has a decisive effect such as physical and chemical damage for successive solution-based film deposition. Such a severe damage by solvent restricts for fabricating building blocks of multi-layered films from solutions. In this work, it will be shown that a proper combination of well-known solvents gives a chance to fabricate multi-layered film, also this new method was applied to make organic field effect transistor. Two types of bottom gate, bottom contact transistors were fabricated, one of which is fabricated by conventional single spin coating method, the other fabricated by double spin coating method. Compared with the electrical characteristics in a single spin coated transistor, the leakage current between source and gate electrode was decreased, ON state current was increased, and the extracted saturation mobility was multiplied more than 2.7 time for double spin coated transistors. It is suggested that the multiple coated gate dielectric structure is more desirable for high performance organic ferroelectric field effect transistors.

• Progress in Medical Physics
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• v.20 no.1
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• pp.43-50
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• 2009

The 4 bank mico-MLC (mMLC; Acculeaf, Direx, Isral) has been commissioned for clinical use of linac based stereotactic radiosurgery. The geometrical parameters to control the leaves were determined and comparisons between measured and calculated by the calculation model were performed in terms of absolute dose (cGy/100 MU). As a result of evaluating calculated dose for various field sizes and depths of 5 and 10 cm in water in the geometric condition of fixed SSD (source to surface distance) and fixed SCD (source to chamber distance), most of differences were within 1% for 6 MV and 15 MV x-rays. The penumbral widths at the isocenter were approximately evaluated to 0.29~0.43 cm depending on the field size for 6 MV and 0.36~0.51 cm for 15 MV x-rays. The average transmission and leakage for 6 MV and 15 MV x-rays were 6.6% and 7.4% respectively in single level of leaves fully closed. In case of dual level of leaves fully closed the measured transmission is approximately 0.5% for both 6 MV and 15 MV x-rays. Through the commissiong procedure we could verify the dose characteristics of mMLC and approximately evaluate the error ranges for treatment planning system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.843-852
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• 2009

In this paper, we present design, fabrication, and measured results for a frequency upconverter for a wireless communication system of UAV(Unmanned Aerial Vehicle). The specifications of such wireless communication system requires the special features of maximum range of communication as well as deployment in UAV and repairing. The frequency upconverter operating at $5.25{\sim}5.45\;GHz$ in C-band was designed and fabricated considering such special features. The AGC function was included because the required output power should be constant for optimal system operation. The fabricated upconverter showed a constant output power of $+2{\pm}0.5\;dBm$ for the $-15{\sim}-10\;dBm$ input. Spuriouses were below -60 dBc and the adjacent leakage power was below -40 dBc. In addition, LO sources in the upconverter was implemented using the frequency synthesizer with step 1 MHz. This is for the application to the situation where multiple UAVs employed and the possible change of the permitted frequency band. The synthesizer showed a phase noise of -100 dBc/Hz at the 100 kHz frequency offset.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.1
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• pp.82-89
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• 2017

In this work, InGaZnO thin film transistors with Ni, Al and ITO source and drain electrode materials were fabricated to analyze a hot carrier induced device degradation according to the electrode materials. From the electrical measurement results with electrode materials, Ni device shows the best electrical performances in terms of mobility, subthreshold swing, and $I_{ON}/I_{OFF}$. From the measurement results on the device degradation with source and drain electrode materials, Al device shows the worst device degradation. The threshold voltage shifts with different channel widths and stress drain voltages were measured to analyze a hot carrier induced device degradation mechanism. Hot carrier induced device degradation became more significant with increase of channel widths and stress drain voltages. From the results, we found that a hot carrier induced device degradation in InGaZnO thin film transistors was occurred with a combination of large channel electric field and Joule heating effects.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Journal of IKEEE
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• v.23 no.4
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• pp.1457-1460
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• 2019

In this paper, we proposed the development of a mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarm that can be location-tracked and irradiated. To measure radiation exposure dose, we use the PIN-Diode radiation measurement sensor module, a semi-conductive radiation measurement sensor that can minimize size and weight. The design for removing leakage current is carried out to enhance the characteristics of the radiation measurement sensor using PIN-Diode. The IMU sensor module is used to estimate the location of the current fireman at the same time as the accident estimate by adding together the data and the values for acceleration on the three axis. Experiments were conductied by an authorized testing agency to determine the efficiency of the proposed mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarms. The cumulative dose measurement range was measured in the range of 10 μSv to 10 mSv, the highest level in the world. The accuracy was measured from ±6.3% to ±9.0% (137 Cs) and normal operation was found at the international standard of ±15%. In addition, positional accuracy was measured within ±10%, resulting in a high level of results, demonstrating its effectiveness. Therefore, it is expected that more firemen will be able to provide with superior performance integrated radiation exposure protection fireman life-saving alarm.

• Journal of Radiation Protection and Research
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• v.32 no.1
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• pp.1-8
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• 2007

A model for radiological dose assessment in an urban environment, METRO-K has been developed. Characteristics of the model are as follows ; 1) mathematical structures are simple (i.e. simplified input parameters) and easy to understand due to get the results by analytical methods using experimental and empirical data, 2) complex urban environment can easily be made up using only 5 types of basic surfaces, 3) various remediation measures can be applied to different surfaces by evaluating the exposure doses contributing from each contamination surface. Exposure doses contributing from each contamination surface at a particular location of a receptor were evaluated using the data library of kerma values as a function of gamma energy and contamination surface. A kerma data library was prepared fur 7 representative types of Korean urban buildings by extending those data given for 4 representative types of European urban buildings. Initial input data are daily radionuclide concentration in air and precipitation, and fraction of chemical type. Final outputs are absorbed dose rate in air contributing from the basic surfaces as a function of time following a radionuclide deposition, and exposure dose rate contributing from various surfaces constituting the urban environment at a particular location of a receptor. As the result of a contaminative scenario for an apartment built-up area, exposure dose rates show a distinct difference for surrounding environment as well as locations of a receptor.

• Proceedings of the Acoustical Society of Korea Conference
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• spring
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• pp.409-416
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• 1999

액체/고체 경계면에 레일레이각으로 초음파 pulse를 입사시키면 입사된 에너지의 상당 부분이 고체쪽으로 침투여 표면으로부터 약 1.5 파장 깊이 정도까지 에너지 분포를 가지고 고체 표면을 따라 전파하는 레일레 이파로 전환되며, 이러한 입사각에서는 기하학적인 거울 반사가 일어나지 않고 반사파의 중심이 Schoch 변위만큼 전방으로 이동되고, 또 입사 방향으로 후반 산란되는 초음파의 신호가 급격히 증가하는 현상이 관찰된다. 만일 고체에서 초음파의 감쇠가 산란에 의해 크게 영향을 받고, 레일레이각에서 고체 쪽으로 침투한 에너지의크기를 $E_0$라고 하면, 고체 표면과 표면 근처를 전파하는 레일레이파의 산란파 에너지, $E_S$는 Schoch 변위, ${\Delta}_S$와 산란에 의한 감쇠계수 ${\alpha}_S$에 비례하는 관계가 있음을 이론적으로 구하였다. 입사 방향으로 후방산란되는 초음파는 산란파의 일부이므로 후방산란 초음파 에너지, E_{Bs}도 이와 같은 관계를 가진다. 그러므로, 레일레이각으로 입사된 초음파의 후방산란 에너지, $E_{B_S}$ 산란체(e.g. grain)의 평균 크기, D와 주파수 f와는 레일레이 산란 영역과 Stochastic 산란 영역에 대해 각각 $E_{B_S}\;\propto\;D^{3}f^{3}$와 $E_{B_S}\;\propto\;D\;f$인 관계를 가지는 것으로 얻어졌다. 이것은 액체/고체 경계면에서 레일레이각으로 입사되어 레일레이파로 전환된 초음파가 다시 액체로 그 에너지를 누설하여 그 산란 영역이 Schoch 변위 내에서 일어나기 때문이며, 이러한 영향에 의해서일반적인 산란에서의 주파수 의존성과는 달리 각 산란 영역에서 그 지수는 1씩 작은 값을 갖는다.향에 따라 음장변화가 크게 다를 것이 예상되므로 이를 규명하기 위해서는 궁극적으로 3차원적인 음장분포 연구가 필요하다. 음향센서를 해저면에 매설할 경우 수충의 수온변화와 센서 주변의 수온변화 사이에는 어느 정도의 시간지연이 존재하게 되므로 이에 대한 영향을 규명하는 것도 센서의 성능예측을 위해서 필요하리라 사료된다.가지는 심부 가스의 개발 성공률을 증가시키기 위하여 심부 가스가 존재하는 지역의 지질학적 부존 환경 및 조성상의 특성과 생산시 소요되는 생산비용을 심도에 따라 분석하고 생산에 수반되는 기술적 문제점들을 정리하였으며 마지막으로 향후 요구되는 연구 분야들을 제시하였다. 또한 참고로 현재 심부 가스의 경우 미국이 연구 개발 측면에서 가장 활발한 활동을 전개하고 있으며 그 결과 다수의 신뢰성 있는 자료들을 확보하고 있으므로 본 논문은 USGS와 Gas Research Institute(GRI)에서 제시한 자료에 근거하였다.ऀĀ耀Ā삱?⨀؀Ā Ā?⨀ጀĀ耀Ā?돀ꢘ?⨀硩?⨀ႎ?⨀?⨀넆돐쁖잖⨀쁖잖⨀／ࠐ?⨀焆덐瀆倆Āⶇ퍟ⶇ퍟ĀĀĀĀ磀鲕좗?⨀肤?⨀⁅Ⴅ?⨀쀃잖⨀䣙熸ጁ↏?⨀

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.7-12
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• 2003

The $Bi_{3.3}La_{0.7}O_{12}$(BLT) capacitors with Metal-Ferroelectric-Insulator-Silicon structure were prepared on $SiO_2/Si$ substrates by using sol-gel method. The BLT thin films annealed at $650^{\circ}C$ and $700^{\circ}C$ showed randomly oriented perovskite crystalline structures. The full with at half maximum (FWHM) of the (117) main peak was decreased from $0.65^{\circ}$ to $0.53^{\circ}$ with increasing the annealing temperature from $650^{\circ}C$ to $700^{\circ}C$, indicating the improvement in the crystalline quality of the film. In addition, the grain size and $R_rms$ , values were increased with increasing the annealing temperatures, showing the rough film surface at higher annealing temperatures. From the capacitance-voltage (C-V) measurements, the memory window voltage of the BLT film annealed at $700^{\circ}C$ was found to be about 0.7 V at an applied voltage of 5 V. The leakage current density of the BLT film annealed at $700^{\circ}C$ was about $3.1{\times}10^{-8}A/cm^2$.