• Journal of the Korean Geotechnical Society
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• v.39 no.8
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• pp.29-39
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• 2023

The degree of saturation determines the connectivity of void space and the particle surface. Thus, it greatly affects the electrical conductivity of soils. This study aimed to analyze the electrical conductivities of coarse grains with a high relevance of pore water conduction and fine grains with a high relevance of surface conduction based on the degree of saturation. It also aimed to express the electrical conductivity of unsaturated soils as a combination of surface and pore water conductions using the modified Archie's equation. Samples were prepared in a plastic cell equipped with four electrodes, and the electrical conductivity was measured based on the porosity at various degrees of saturation (40%~100%). The results demonstrate that Archie's equation can be used to express the electrical conductivity of coarse grains, with a saturation exponent of ~1.93 regardless of the pore water conductivity. However, the saturation exponent of fine grains varied considerably with pore water concentration. This variation can be attributed to the relative magnitude of surface conduction with respect to the electrical conductivity of soils at different pore water concentrations. Thus, the degree of saturation has varying effects on pore water conduction and surface conduction. Therefore, different saturation exponents must be used for pore water conduction and surface conduction to predict the electrical conductivity of unsaturated soils using the modified Archie's equation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.731-733
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• 2012

Because the Double gate MOSFET has two gates, it has more efficient on controling current than the exisiting MOSFET, and it can also decrease short channel effects in the nano-device. In this study, during the manufacturing the Double gate MOSFET, we will analyze the change of threshold voltage according to doping concentration that makes a significant impact on short channel effects. One of the structural factors that affect the threshold voltage on the Double gate MOSFET is the doping concentration, and it is very important device parameter. In this paper, we can find that the threshold voltage became larger when the doping concentration increased from $10^{15}cm^{-3}$ to $10^{19}cm^{-3}$.

• Korean Chemical Engineering Research
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• v.54 no.3
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• pp.315-319
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• 2016

This study examined the optimization of hot-water extraction conditions for maximizing the total polyphenol compounds (TPC) extracted from amaranth leaf. The effects of three independent variables, including extraction temperature, extraction time and ethanol concentration on TPC were investigated using central composite design (CCD). The concentration of TPC increased with increased levels of extraction temperature and time. The extraction temperature and the ethanol concentration showed the significant effect on TPC production (p<0.05). The predicted values at the optimized condition were acceptable when compared to the experimental values ($R^2=0.9566$). The optimum extraction conditions were as follows: temperature of $90.1^{\circ}C$, time of 50 min and ethanol concentration of 61.6% (v/v) for the maximum TPC of 12.6 mg GAE/g DM.

• Journal of Yeungnam Medical Science
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• v.6 no.2
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• pp.147-157
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• 1989

To investigate the blood lead concentration, their interrelation, correlation factor and influence on pregnant women and newborn, lead concentration in the maternal blood and umbilical cord blood were determined. Samples were collected from 130 mothers who were living in the Taegu City, during March, 1989. Blood lead concentration was estimated using the Atomic Absorption Spectrophotometer(IL. 551) equipped with Flameless Furnace Atomizer (IL. 665). The mean lead concentration of maternal and cord blood were $17.47{\pm}7.92{\mu}g/d{\ell}$, $15.31{\pm}7.98{\mu}g/d{\ell}$, respectively. A significant correlation was observed between the lead concentration of maternal and cord blood, r=0.663, Y=0.667X+3.646. No significant correlation was observed between previous spontaneous abortion and obstetric complication of mother and maternal blood lead concentration. Similarly, no significant correlation was observed between the sex, gestational age of neonate and cord blood lead concentration. But the birth weight of neonate had some negative correlation with cord blood lead concentration. The blood lead concentration of mother who had engaged in manufactures were higher than others and the longer working years were, the higher blood lead concentration were. Significant correlation was observed between husband's occupational exposure to lead and maternal blood lead concentration.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.38-45
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• 1998

A new set of MQW LD rate equations is proposed that include the interwell carrier transport effect assuming it is dominated by holes. Solving the rate equations, the DC transient response of MQW was obtained and it was shown that uneven carrier concentrations exist due to the interwell carrier transport effect. In addition, it was found that the large number of quantum wells can limit the LD modulation speed and InGaAlAs barriers with smaller valence band offsets can have larger modulation speeds. It is expected that the proposed rate equations can find useful applications in designing the optimal MQW LD structures for high speed applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.12
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• pp.1265-1272
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• 2011

We performed numerical simulations of the recirculation flow of an electrolyte fluid in a circular container driven by an AC electromagnetic force for solving continuity and momentum equations. We also conducted an experiment to obtain flow data, which were in good agreement with the numerical simulation results. Furthermore, we performed a parametric study on both numerical and experimental aspects and found that the fluid velocity increases with an increase in the electrolyte concentration and magnetic intensity and with a decrease in the fluid depth and AC frequency.

• Journal of the Korean Chemical Society
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• v.11 no.4
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• pp.159-164
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• 1967

An exact expression of the titration fraction as a function of the potential is derived for the cases where the coefficients of the both half reactions involved in the titration are homogeneous. It shows that the potential is independent of the concentration of the reagents not only at the equivalence point but also at all titration fractions. The sharpness of the end point detection by potentiometric method is shown to depend not only on the difference of the normal potentials involved but also strongly on the number of electrons transferred in each half reaction. The inflexion point of the potentiometric titration curve is shown to be slightly off from the equivalence point, including the cases where the number of electrons involved are equal. Completeness of the reaction in the course of titration is analyzed, too, mostly in terms of equilibrium constant, thus most of the results are applicable to any type of equilibrium in a single phase with particular relationship of coefficients of chemical equation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.