• Journal of the Korean Society for Precision Engineering
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• v.21 no.6
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• pp.7-14
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• 2004

나노 임프린트 기술은 기존의 광학적 리소그라피 (optical lithography) 기술보다 저렴한 비용으로 나노 구조물을 대량으로 제조할 수 있을 것으로 기대되고 있는 기술이다. 현재까지 반도체 공정기술의 주류를 이루고 있는 광학적인 리소그라피 기술은, 100nm이상의 CD(Critical Dimension)를 가지는 구조물들을 정밀하게 제조하여, 미소전자공학 (microelectronics) 소자, MEMS/MEMS, 광학소자 등의 제품들을 대량으로 생산하는 데에 널리 활용되고 있다. 반도체 소자의 고집적화 경향에 따라 100 nm 이하의 CD를 가지는 나노 구조물들을 제조할 필요성이 높아지고 있지만, 광학적인 방법으로는 광원의 파장보다 작은 구조물들을 제조하기가 어렵다. 보다 짧은 파장을 가지는 광원을 이용하는 리소그라피 장비가 계속적으로 개발되고 있으나, 그에 따른 장비 비용 및 제조 단가가 기하급수적으로 증가하고 있다.(중략)

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.50.2-50.2
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• 2009

사파이어는 질화물계 광전자소자 제작 시 박막 성장 기판으로 주로 사용되어 최근 그 중요성이 부각되고 있다. 특히 미세 패턴이 형성된 사파이어 기판을 이용하여 질화물계 발광다이오드 소자를 제작하면 빛의 난반사가 증가하여 광추출효율에 큰 개선이 나타난다. 또한 사파이어는 화학적 안정성이 뛰어나고, 높은 강도를 지녀 나노임프린트 등 여러 가지 패터닝 공정에서 패턴 형성 몰드로도 응용될 수 있다. 그러나 이와 같은 사파이어의 화학적 안정성으로 인하여 sub-micron 크기의 미세 패턴을 형성하기 힘들며, 현재 사파이어의 패턴은 micron 크기로 제한되어 사용되고 있다. 본 연구에서는 나노임프린트 리소그라피(NIL)를 사용하여 사파이어 웨이퍼의 c-plane위에 sub-micron 크기의 hole 패턴 및 pillar 패턴을 형성하였다. 우선 Hole 패턴을 형성하기 위해 사파이어 기판 위에 금속 hard mask 패턴을 UV 임프린트 공정과 etch 공정을 통해 형성하였다. 그리고 이 금속 패턴을 mask로 사파이어를 ICP 식각을 하여 hole 패턴을 형성하였다. 또한 Pillar 패턴을 형성하기 위해 lift-off 공정을 이용하여 금속 마스크 패턴을 형성하였고 이를 ICP 식각을 통해 사파이어 기판 위에 pillar 패턴을 형성하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.237-237
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• 2005

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.288-292
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• 2003

The fabrication of silicon nano-master with pillar structures using E-beam lithography and ICP etching was investigated for application of 2-dimensional polymer photonic crystal waveguides with air hole structures. Pillar structures with square, hexagon, dodecagon and circle were successfully fabricated. The diameters and structures of fabricated pillars were measured by CD-SEM and SPM-AFM. It was found that the optimal dose for complete circle pillar structures was 432 $\mu$C/$\textrm{cm}^2$.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.11 s.188
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• pp.34-41
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• 2006

Nanoimprint lithography is an emerging technology which has an ability to make patterns under 100nm width. Recently many researches have been focused to develop multilayer patterning function in nanoimprint lithography and aligning method is attracting attention as a key technology. $Moir\'{e}$ has been used widely to measure dislocation or deformation of objects and considered one of the best solutions to detect aligning error in nanoimprint lithography. Concentric circular patterns are used to generate a $moir\'{e}$ fringe in this paper and aligning offset and direction are extracted from it. Especially this paper shows the difference of fringe equation of $moir\'{e}$ which can be obtained in nanoimprint process atmosphere from normal one.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1065-1068
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• 2003

The nano imprint process is one of the next generation lithography has been mentioned as one of major nanoreplication techniques because it is simple process, low cost, high replication fidelity and relatively high throughput. This process requires a surface contact between a template with patterns and a wafer on a stage. After contact, the vertical moving the template to the wafer causes some directional motions of the stage. Thus the stage must move according to the motions of the template to avoid the damage of the transferred patterns on the wafer. This study is to develop the wafer stage with a passive compliance to overcome the damage. This stage is designed with the concept like that it has a monolithic, symmetry and planar 6-DOF mechanism.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1078-1082
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• 2003

A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.275-280
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• 2005

We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1917-1921
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• 2008

Ultraviolet-nanoimprint lithography (UV-NIL) is promising technology for cost effectively defining micro/nano scale structure at room temperature and low pressure. In addition, this technology is fascinating because of it's possibility for high-throughput patterning without complex processes. However, to acquire good micro/nano patterns using this technology, there are some challenges such as uniformity and fidelity of patterns, etc. In this paper, we have focused on uniform contact mechanism and performed contact mechanics analysis. The dimension of the flexible sheet to get adequate uniform contact area has been obtained from contact mechanics simulation. Based on this analysis, we have made a uniform pressurizing device and confirmed its uniform pressurized zone using a pressure sensing paper.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.498-501
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• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for manipulation of light. The existence of a photonic bandgap, a frequency range in which propagation of light is prevented in all direction, makes photonic crystal very useful in application where spatial localization of light is required for waveguide, beam splitter, and cavity. But fabrication of 3 dimensional photonic crystal is still difficult process. a concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air, and perforated with 2 dimensional lattice of hole. We show that the polymer slabs suspended in air with triangular lattice of air hole can exhibit the in-plane photonic bandgap for TE-like modes. The fabrication of Si master with pillar structure using hot embossing process was investigated for 2 dimensional low-index-contrast photonic crystal waveguide.