• Title/Summary/Keyword: 나노패터닝

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Micropattern Arrays of Polymers/Quantum Dots Formed by Electrohydrodynamic Jet (e-jet) Printing (이젯 프린터를 사용한 고분자/퀀텀닷 마이크로 패터닝 공정)

  • Kim, Simon;Lee, Su Eon;Kim, Bong Hoon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.18-23
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    • 2022
  • Electrohydrodynamic jet (e-jet) printing, a type of direct contactless microfabrication technology, is a versatile fabrication process that enables a wide range of micro/nanopattern arrays by applying a strong electric field between the nozzle and the substrate. In general, the morphology and the thickness of polymers/quantum dot micropatterns show a systematic dependence on the diameter of the nozzle and the ink composition with a fully automated printing machine. The purpose of this report is to provide typical examples of e-jet printed micropatterns of polymers/quantum dots to explain the effect of each process variable on the result of experiments. Here, we demonstrate several operating conditions that allow high-resolution printing of layers of polymers/quantum dots with a precise control over thickness and submicron lateral resolution.

Fabrication and Characterization of Transparent Piezoresistors Using Carbon Nanotube Film (탄소나노튜브 필름을 이용한 투명 압저항체의 제작 및 특성 연구)

  • Lee, Kang-Won;Lee, Jung-A;Lee, Kwang-Cheol;Lee, Seung-Seob
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.12
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    • pp.1857-1863
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    • 2010
  • We present the fabrication and characterization of transparent carbon nanotube film (CNF) piezoresistors. CNFs were fabricated by vacuum filtration methods with 65?92% transmittance and patterned on Au-deposited silicon wafer by photolithography and dry etching. The patterned CNFs were transferred onto poly-dimethysiloxane (PDMS) using the weak adhesion property between the silicon wafer and the Au layer. The transferred CNFs were confirmed to be piezoresistors using the equation of concentrated-force-derived resistance change. The gauge factor of the CNFs was measured to range from 10 to 20 as the resistance of the CNFs increased with applied pressure. In polymer microelectromechanical systems, CNF piezoresistors are the promising materials because of their high sensitivity and low-temperature process.

A Study on Flow Characteristics of Fountain-pen Nano-Lithography with Active Membrane Pumping (능동적 박막 펌핑에 의한 파운틴 펜 나노 리소그래피 유동 특성에 관한 연구)

  • Lee Jin-Hyoung;Lee Young-Kwan;Lee Sung-Kun;Lee Suk-Han;Kim Youn-Jea;Kim Hun-Mo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.30 no.8 s.251
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    • pp.722-730
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    • 2006
  • In this study, the flow characteristics of a FPN (Fountain Pen Nano-Lithography) using active membrane pumping are investigated. The FPN has integrated chamber, micro channel, and high capacity reservoir for continuous ink feed. The most important aspect in this probe provided control of fluid injection using active membrane pumping in chamber. The flow rates in channel by capillary force are theoretically analyzed, including the control of the mass flow rates by the deflection of the membrane. The above results are compared with the numerical simulations that calculated by commercial code, FLUENT. The velocity of the fluid in micro channel shows linear behaviors. And the mass flows are proportional to the second order function of the pumping pressure that is imposed to the membrane.

Fabrication of wrap-around gate nanostructures from electrochemical deposition (전기화학적 도금을 이용한 wrap-around 게이트 나노구조의 제작)

  • Ahn, Jae-Hyun;Hong, Su-Heon;Kang, Myung-Gil;Hwang, Sung-Woo
    • Journal of IKEEE
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    • v.13 no.2
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    • pp.126-131
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    • 2009
  • To overcome short channel effects, wrap-around field effect transistors have drawn a great deal of attention for their superior electrostatic coupling between the channel and the surrounding gate electrode. In this paper, we introduce a bottom-up technique to fabricate a wrap-around field effect transistor using silicon nanowires as the conduction channel. Device fabrication was consisted mainly of electron-beam lithography, dielectrophoresis to accurately align the nanowires, and the formation of gate electrode using electrochemical deposition. The electrolyte for electrochemical deposition was made up of non-toxic organic-based solution and liquid nitrogen was used as a method of maintaining the shape of polymethyl methacrylate(PMMA) during the process of electrochemical deposition. Patterned PMMA can be used as a nano-template to produce wrap-around gate nano-structures.

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Fracture Behavior of Glass/Resin/Glass Sandwich Structures with Different Resin Thicknesses (서로 다른 레진 두께를 갖는 유리/레진/유리샌드위치 구조의 파괴거동)

  • Park, Jae-Hong;Lee, Eu-Gene;Kim, Tae-Woo;Yim, Hong-Jae;Lee, Kee-Sung
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.12
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    • pp.1849-1856
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    • 2010
  • Glass/resin/glass laminate structures are used in the automobile, biological, and display industries. The sandwich structures are used in the micro/nanoimprint process to fabricate a variety of functional components and devices in fields such as display, optics, MEMS, and bioindustry. In the process, micrometer- or nanometer-scale patterns are transferred onto the substrate using UV curing resins. The demodling process has an important impact on productivity. In this study, we investigated the fracture behavior of glass/resin/glass laminates fabricated via UV curing. We performed measurements of the adhesion force and the interfacial energy between the mold and resin materials using the four-point flexural test. The bending-test measurements and the load-displacement curves of the laminates indicate that the fracture behavior is influenced by the interfacial energy between the mold and resin and the resin thickness.

Localized Oxidation of (100) Silicon Surface by Pulsed Electrochemical Processes Based on AFM (AFM 기반 Pulse 를 이용한 전기화학적 가공)

  • Lee, Jeong-Min;Kim, Sun-Ho;Park, Jeong-Woo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.11
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    • pp.1631-1636
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    • 2010
  • In this study, we demonstrate a nano-scale lithograph obtained on localized (100) silicon (p-type) surface using by modified AFM (Atomic force microscope) apparatuses and by adopting controlling methods. AFM-based experimental apparatuses are connected to a customized pulse generator that supplies electricity between the conductive tip and the silicon surface, while maintaining a constant humidity throughout the lithography process. The pulse durations are controlled according to various experimental conditions. The electrochemical reaction induced by the pulses occurs in the gap between the conductive tip and silicon surface and result in the formation of nanoscale oxide particles. Oxide particles with various heights and widths can be created by AFM surface modification; the size of the oxide particle depends on the pulse durations and the applied electrical conditions under a humid environment.

Nano-patterning technology using an UV-NIL method (UV-NIL(Ultraviolet-Nano-Imprinting-Lithography) 방법을 이용한 나노 패터닝기술)

  • 심영석;정준호;손현기;신영재;이응숙;최성욱;김재호
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.39-45
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    • 2004
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. A 5${\times}$5${\times}$0.09 in. quartz stamp is fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. FAS(Fluoroalkanesilane) is used as a material for anti-adhesion surface treatment on the stamp and a thin organic film to improve adhesion on a wafer is formed by spin-coating. The low viscosity resin droplets with a nanometer scale volume are dispensed on the whole area of the coated wafer. The UV-NIL experiments have been performed using the EVG620-NIL. 370 nm - 1 m features on the stamp have been transferred to the thin resin layer on the wafer using the multi-dispensing method and UV-NIL process. We have measured the imprinted patterns and residual layer using SEM and AFM to evaluate the potential of the process.

UV 나노임프린트 리소그래피의 Quartz 기판상의 Resin mold 제거를 위한 Hybrid 세정공정에 관한 연구

  • Jo, Yun-Sik;Kim, Min-Su;Gang, Bong-Gyun;Kim, Jae-Gwan;Lee, Byeong-Gyu;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.81.1-81.1
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    • 2012
  • 나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

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Cost-Effective Soft Lithography of Organic Semiconductors in OFETs with Compact Discs as Master Molds (Compact Disc를 마스터 몰드로 사용하는 저비용의 OFET용 유기반도체 소프트 리소그래피)

  • Sejin Park;Hyukjin Kim;Tae Kyu An
    • Journal of Adhesion and Interface
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    • v.23 no.4
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    • pp.116-121
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    • 2022
  • OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm2/Vs and mobility of devices produced by soft lithography method was 0.086 cm2/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

Playing with the Large-Scale CVD Graphene

  • Kim, Geun-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.69-70
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    • 2012
  • 본 발표에서는 최근 과학계에서 대두되어 전 세계적으로 폭발적인 연구가 수행되고 있는 신소재 그래핀에 대한 전반적인 소개와 현재 동향 및 미래 응용가능성에 대해 언급하고자 한다. 그래핀 연구관련 다양한 분야가 있으나, 본 세미나에서는 CVD로 합성하는 방법에 대한 개념 그리고 합성한 대면적 그래핀의 다양한 응용 분야들과 본인이 수행했던 연구결과물들을 몇 가지 소개하고자 한다. 구체적인 내용으로는 CVD에 의한 대면적 그래핀의 합성, 합성된 그래핀의 전사 및 패터닝 공정, CVD 그래핀의 도핑 및 다양한 물성분석, 그리고 그래핀 파이버, 히터 및 태양전지 응용 연구 등이다. 특히, 그래핀의 연구에 있어서 가장 중요한 이슈가 아주 품질이 좋은 그래핀 시료를 준비하는 것인데, 이는 좋은 그래핀을 합성해야 하는 것은 물론이고, 깨끗한 전사공정이 수반되어야 가능하다. 따라서 깨끗한 전사공정을 통해 품질 좋은 그래핀을 준비하는 상세한 과정들과 이에 대한 결과물들을 언급하겠다. 이어서 최근에는 CVD 방법에 의한 질소원자가 도핑된 그래핀의 직접 합성을 시도하였고, 이렇게 도핑된 그래핀 시료에 대해, 다양한 분석 장비들(Raman, STM, XPS & XAS)을 이용하여 기초물성들을 측정하고 비교 분석하였다. 끝으로 최근에 수행중인 그래핀과 기타 다른 나노소재(VO2, h-BN etc.)들과 접목된 hybrid 나노소재 연구에 대한 내용을 간략히 소개하고 발표를 마무리하겠다.

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