• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.5
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• pp.9-17
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• 2009

In this paper, we describe a flow meter system for pulverized coal developed for the pulverizer-burner system of a boiler or blast furnace, which uses the density and the velocity of the granule flow. The granule flow density is measured by a sensor that detects the capacitance from the electrode on the surface of the piping system. The velocity of granule flow can be calculated using the distance between two pairs of built-in sensors in the flow direction, the time obtained from the sampling cycle using the correlation method between two waveforms of the sensors. The flow rate is calculated from the density and velocity of the granule flow. The reliability and accuracy of the flow meter system has been verified by comparing the data with the weight measured from a load-cell.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.8 no.2
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• pp.46-53
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• 1994

This paper presents a diagnosis teclmique using ultrasonic sensors for monitoring the growth of partial discharge in power transformers. This teclmique counts the ultrasonic pulses generated from partial discharge over a threshold leveL In experiments, a ultrasonic generator and the point to plane electrodes generated ultrasonic pulses. With a constant voltage between the electrodes, the ultrasonic pulses over a threshold were a fairly constant. When the voltage increased or insulation paper was inserted between the electrodes, the partial discharge increased. In this case the number of ultrasonic pulses also increased and therefore the proposed teclmiques successfully diagnosed the growth of partial discharge.

• Journal of the Korean Chemical Society
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• v.17 no.2
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• pp.126-129
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• 1973

An amperometric method has been developed for the titration of silver with 2,5-dimercapto-1,3,4,-thiadiazole in ammonical solution (1N) using rotating platinum electrode as an indicator electrode and the mercury-mercury (II) iodide as reference electrode. Direct titration of milligram amount of silver (0.05-1.0mg) is possible in the presence of a number of foreign ions in ammonical solution containing ethylenediaminetetraacetic acid as masking agent under atmosphere. The interfering elements are gold and platinum. The milligram amount of silver can be determined by the proposed method within an error ${\pm}3{\%}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.187-187
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• 2010

ZnO의 나노 구조는 화학적으로 안정하고 큰 결합에너지를 가지는 성질 때문에 청색 영역에서 작동하는 광전소자의 제작에 대단히 유용하다. ZnO 나노 구조들은 화학 기상 성장법, 기상 에피텍시 성장법, 화학적 용액 성장법과 같은 여러 가지 방법으로 성장하고 있다. 여러 가지 성장방법 중에서도 전기 화학 증착법으로 성장된 ZnO의 나노 구조는 가격이 저렴하고 낮은 온도에서 성장이 가능하며 대면적화를 할 수 있는 장점이 있다. 전기 화학 증착법으로 ZnO을 성장할 때 3개의 전극을 사용하여 성장하였다. ITO 기판을 음극으로 백금 전극을 양극으로 사용하였고 기준 전극은 Ag/AgCl을 사용하였다. Zinc Nitrate의 몰 농도를 변화하면서 ZnO 나노구조를 성장 하였다. 성장한 ZnO 나노구조를 $400^{\circ}C$에서 2 분정도 열처리를 하였다. 성장된 ZnO을 X-선회절장치를 분석하게 되면 (0002) 피크가 $34.35^{\circ}$에서 주되게 나타났다. 주사 전자 현미경상은 Zinc Nitrate의 몰 농도가 낮을 때 성장한 ZnO 는 나노세선 형태로 형성되었음을 보여주었다. Zinc Nitrate의 농도가 높아지게 되면 ZnO 나노구조가 나노 막대 또는 나노 접시 모양으로 변화되었다. 300 K에서 광루미네선스 스펙트럼은 형성된 나노구조가 엑시톤과 관련된 주된 피크가 Zinc Nitrate 농도에 따라 변화하게 되는 것을 알 수 있었다. 이 실험결과는 ZnO 나노구조의 미세구조와 광학적 성질이 Zinc Nitrate의 농도에 영향을 많이 받는 것을 알 수 있었다.

• Korean Journal of Clinical Laboratory Science
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• v.53 no.1
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• pp.60-67
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• 2021

Electroencephalography (EEG) is used for the diagnosis of epilepsy and testing the brain function. Clinical technologists are responsible for recording EEG without artifacts in accordance with the international 10~20 electrode system. Training on these techniques requires practical education. In the case of EEG, however, it is difficult for trainees to find the correct location of the electrode. Therefore, this study compared the time spent to locate the electrode attachment between traditional tape and the newly developed band. The time spent for sitting position patients using the band (196.7±61.8s) was 1084.3 s faster than the tape (1,281.0±457.4s) (P<0.001). Furthermore, the spend time spent for lying position patients using the band (200.2±49.3s) was 1217.7s faster than the tape (1417.9±482.3s) (P<0.001). Measurements using the band showed fewer differences due to various factors, such as position, practical experience, and gender. The newly developed band can locate the correct electrode attachment position quickly and efficiently, which has been a difficult problem in EEG practical education. In addition, this band is expected to be applied widely by new clinical technologists in the clinical field. Nevertheless, more study will be required to verify the accuracy of the location of the attaching electrode.

• Journal of the Korean Geophysical Society
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• v.6 no.3
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• pp.155-164
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• 2003

The validity and efficiency of the roll-along technique widely used in 2-D electrical resistivity survey are analyzed in case of the dipole-dipole and the Wenner-Schlumberger arrays by numerical modelling. The shallow anomalous resistivity bodies are successfully inverted both in the dipole-dipole and in the Wenner-Schlumberger arrays because the shallow data of pseudosection are not omitted by the roll-along technique. However, the deep anomalous resistivity bodies can not be well resolved due to the skip of observed data which is more significant in the Wenner-Schlumberger array having relatively poor horizontal coverage of obtaining data. Carrying out electrical survey adopting the dipole-dipole array, the skip of data is insignificant because it is unfeasible to expand the electrodes to the maximum electrode separation coefficient($n_max$) owing to low S/N ratio. In case of the Wenner-Schlumberger array, however, because it is generally feasible to expand the electrodes $n_max$ to the owing to high S/N ratio, it is highly possible that skip of data from the roll-along technique causes significant distortion of inversion results. Therefore, adopting the Wenner-Schlumberger array having deeper median depth(Edwards, 1977) than do the dipole-dipole array on condition of the same unit electrode spacing( ($a$) ) and $n_max$, it is recommended to determine $a$ based on not $n_max$but $n_prob$free from the skip of observing data and forward electrodes with keeping overlap interval 3/4 of the survey line length in order to reduce the distortion of resistivity structure and perform resistivity survey efficiently. These results are confirmed by numerical modelling.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.2027-2036
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• 2013

Comparison of removal performance between reverse osmosis(RO), nanofiltration(NF), electrocoagulation(EC) and electroadsorption(EA) for removal of nitrate and fluoride often exceeded the limits of water quality in small water treatment plants. Removals of nitrate and fluoride were 72-92% and 74-85% in RO, 5-15% and 1% in NF, 99% and 44% in EA equipped with MWCNT coated electrodes, 82% and 77% in EA equipped with Cu-MWCNT electrodes, and 11-46% and 69-99% in EC. Consequently, high removals of both ions were anticipated in RO. Effective removal of both ions are possible for EC, but great production of sludge is a big burden. EA equipped with the MWCNT electrodes showed a great fluctuation in removal efficiency, and electrode stability should be upgraded.

• Transactions of the Korean hydrogen and new energy society
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• v.3 no.2
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• pp.55-62
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• 1992

To improve the MCFC performance it is important to distingush between polarization losses occuring in the individual electrodes and other components. In this study a current interruption technique has been applied to a MCFC unit cell having a reference electrode to separately study the contributions of IR loss and other polarization losses. At a current density of $150mA/cm^2$ the IR-free polarization of a Ni anode was about 60mV while that of a NiO cathode was 130mV and the Ohmic loss of the cell was as large as 170mV suggesting that both the cathode and the cell structure need further improvement. The thin-film electrode model was used to simulate the performance of the electrodes. Both andoe data and cathode data were successfully fitted.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.75-75
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• 2000

플라즈마 화학증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)을 이용하여 양질의 Si3N4 금속-유전막-금속(Metal-Insulator-Metal, MIM) 커페시터를 구현하였다. Fig.1에 나타낸 바와 같이 p형 실리콘 웨이퍼의 열 산화막 위에 1%의 실리콘을 함유하는 알루미늄을 스퍼터링으로 증착하여 전극을 형성하고 두 전극사이에 Si3N4 박막을 증착하여 MIM구조의 박막 커패시터를 제조하였다. Si3N4 유전막은 150Watt의 RF 출력하에서 반응 가스 N2/SiH4/NH3를 각각 300/10/80 sccm로 흘려주어 전체 압력을 1Torr로 유지하면서 40$0^{\circ}C$에서 플라즈마 화학증착법을 이용하여 증착하였으며, Al과 Si3N4 층의 계면에는 Ti과 TiN을 스퍼터링으로 증착하여 확산 장벽으로 이용하였다. 각 시편의 커패시턴스 및 바이어스 전압에 따른 누설 전류의 변화는 LCR 미터를 이용하여 측정하였고 각 시편의 커패시턴스 및 바이어스 전압에 따른 누설 전류의 변화는 LCR 미터를 이용하여 측정하였고 각 시편의 유전 특성의 차이점을 미세구조 측면에서 이해하기 이해 극판과 유전막의 단면 미세구조를 투과전자현미경(Transmission Electron Microscope, TEM)을 이용하여 분석하였다. 유전체인 Si3N4 와 전극인 Al의 계면반응을 억제시키기 위해 TiN을 확산 장벽으로 사용한 결과 MIM커패시터의 전극과 유전체 사이의 계면에서는 어떠한 hillock이나 석출물도 관찰되지 않았다. Fig.2와 같은 커패시턴스의 전류-전압 특성분석으로부터 양질의 MIM커패시터 특성을 f보이는 Si3N4 의 최소 두께는 500 이며, 그 두께 미만에서는 대부분의 커패시터가 전기적으로 단락되어 웨이퍼 수율이 낮아진다는 사실을 알 수 있었다. TEM을 이용한 단면 미세구조 관찰을 통해 Si3N4 층의 두께가 500 미만인 커패시터의 경우에 TiN과 Si3N4 의 계면에서 형성되는 슬릿형 공동(slit-like void)에 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 이러한 슬릿형 공동은 제조 공정 중 재료에 따른 열팽창 계수와 탄성 계수 등의 차이에 의해 형성된 잔류응력 상태가 유전막을 기준으로 압축응력에서 인장 응력으로 바뀌는 분포에 기인하였다는 사실을 확인하였다.